3DI solder cup
A substrate or semiconductor device, semiconductor device assembly, and method of forming a semiconductor device assembly that includes a barrier on a solder cup. The semiconductor device assembly includes a substrate disposed over another substrate. At least one solder cup extends from one substrate towards an under bump metal (UBM) on the other substrate. The barrier on the exterior of the solder cup may be a standoff to control a bond line between the substrates. The barrier may reduce solder bridging during the formation of a semiconductor device assembly. The barrier may help to align the solder cup with a UBM when forming a semiconductor device assembly and may reduce misalignment due to lateral movement of substrates and/or semiconductor devices.
1. A device comprising:
a substrate;
an electrical interconnect within the substrate;
a barrier structure electrically connected to the electrical interconnect, the barrier structure having a funnel-shaped recess defined therein, wherein the funnel-shaped recess is narrower at a first position adjacent to the substrate than at a second position further from the substrate than the first position;
a copper structure positioned within the funnel-shaped recess of the barrier structure, wherein the copper structure is distinct from the barrier structure and in contact with the barrier structure; and
solder positioned within the funnel-shaped recess of the barrier structure, wherein at least a portion of the solder is in contact with an inner wall of the funnel-shaped recess of the barrier structure
a nickel structure positioned within the funnel-shaped recess of the barrier structure, wherein the nickel structure is distinct from the barrier structure and in contact with the barrier structure.
2. The device of claim 1 , wherein the barrier structure comprises tantalum, tungsten, titanium nitride, or combinations thereof.
3. The device of claim 1 , further comprising:
a semiconductor device having a via and an under bump metal (UBM) electrically connected to the via, and wherein the UBM is encased in the solder within the funnel-shaped recess of the barrier structure.
4. The device of claim 3 , wherein the UBM includes angled sidewalls.
5. The device of claim 4 , wherein the angled sidewalls of the UBM are configured to produce a wetting force between the substrate and the semiconductor device during thermal compression bonding.
6. The device of claim 3 , wherein the barrier structure and the UBM form an interconnect that electrically connects the electrical interconnect with the semiconductor device.
7. The device of claim 3 , wherein the UBM comprises nickel or gold.
8. The device of claim 3 , wherein the UBM is a through silicon via (TSV) pad, a bonding pad, a test pad, or a probe pad.
9. A device comprising:
a first semiconductor device having a first side and a second side, the first semiconductor device comprising:
a substrate;
a via within the substrate; and
an under bump metal (UBM) positioned on the first side of the first semiconductor device and electrically connected to the via; and
a second semiconductor device having a first side and a second side, the second semiconductor device comprising:
a substrate;
an electrical interconnect within the substrate;
a barrier structure electrically connected to the electrical interconnect, the barrier structure having a funnel-shaped recess defined therein, the funnel-shaped recess narrower at a first position adjacent to the substrate than at a second position further from the substrate than the first position
at least one metal structure within the funnel-shaped recess of the barrier structure, wherein the at least one metal structure is distinct from the barrier structure and in contact with the barrier structure; and
solder positioned within the funnel-shaped recess of the barrier structure, wherein the UBM is encased in the solder within the funnel-shaped recess of the barrier structure, and wherein at least a portion of the solder is in contact with an inner wall of the funnel-shaped recess of the barrier structure.
10. The device of claim 9 , further comprising:
at least one metal structure within the funnel-shaped recess of the barrier structure.
11. The device of claim 10 , wherein the at least one metal structure includes copper or nickel.
12. The device of claim 9 , wherein the UBM includes angled sidewalls.
13. The device of claim 9 , wherein the barrier structure and the UBM form an interconnect that electrically connects the first semiconductor device with the second semiconductor device.
14. The device of claim 9 , wherein the barrier structure comprises tantalum, tungsten, titanium nitride, or combinations thereof.