Methods and apparatus for three-dimensional NAND structure fabrication
Methods and apparatus for forming a plurality of nonvolatile memory cells are provided herein. In some embodiments, the method, for example, includes forming, on a substrate, a stack of alternating layers including a first layer of material and a second layer of material different from the first layer of material; forming a memory hole in the stack of alternating layers of the first layer of material and the second layer of material; depositing a layer of blocking oxide on sides defining the memory hole; depositing a layer of silicon atop the layer of blocking oxide to form a silicon channel; deposit core oxide to fill the silicon channel; removing the first layer of material to form spaces between the alternating layers of the second material; and one of depositing a third layer of material to partially fill the spaces to leave air gaps therein or depositing a fourth layer of material to fill the spaces.
1. A method for forming a plurality of nonvolatile memory cells, comprising:
forming, on a substrate, a stack of alternating layers including a first layer of material and a second layer of material different from the first layer of material, wherein the first layer of material is ruthenium;
forming a memory hole in the stack of alternating layers of he first layer of material and the second layer of material;
depositing a layer of blocking oxide on sides defining the memory hole;
depositing a layer of silicon directly atop the layer of blocking oxide to form a silicon channel that does not extend into the substrate;
depositing core oxide to fill the silicon channel;
removing the second layer of material to form spaces between the alternating layers of the first layer of material; and
one of depositing a third layer of material to partially fill the spaces to leave air gaps therein or depositing, a fourth layer of material to fill the spaces.
2. The method of claim 1 , wherein the second layer is carbon, silicon, silicon carbide, or silicon oxycarbide, the third layer of material if used is oxide, and the fourth layer of material if used is a low k oxide.
3. The method of claim 2 , wherein the low k oxide is one of n oxide or silicon dioxide having a dielectric constant from about 3.5 to about 4.1.
4. The method of claim 1 , wherein the one of depositing the third layer of material to partially fill the spaces to leave air gaps therein or depositing the fourth layer of material in the spaces is performed using one of chemical vapor deposition or atomic layer deposition.
5. The method of claim 1 , wherein the first layer of material is deposited using physical vapor deposition and the second layer of material is deposited using chemical vapor deposition.
6. The method of claim 1 , wherein depositing the layer of blocking oxide, depositing the layer of silicon, and depositing the core oxide is performed using one of chemical vapor deposition or atomic layer deposition.
7. The method of claim 1 , wherein removing the second layer of material is performed using one of an isotropic etch process that uses an oxygen containing gas, rapid thermal oxidation, radical oxidation, or remote plasma oxidation.
8. The method of claim 1 , wherein forming the memory hole is performed using a dry etching process that uses an oxygen containing gas comprising CO, CO 2 , H 2 O, NO, N 2 O, NO 2 , O 2 , or O 3 .
9. The method of claim 1 , further comprising, after depositing the core oxide to fill the silicon channel, depositing a layer of insulating material to cover a last layer of the stack of alternating layers and the memory hole.
10. The method of claim 1 , wherein the blocking oxide comprises at least one of poly Si, SiO 2 , SiOC, Si 3 N 4 , Al 2 O 3 , Y 2 O 3 , ZrO 2 , or HfO 2 , and the core oxide is made of one of SiO or SiOC.
11. A method for forming a plurality of nonvolatile memory cells, comprising:
forming, on a substrate, a stack of alternating layers including a first layer of material, wherein the first layer of material is a conductive layer, and a second layer of material that is carbon, silicon, silicon carbide, or silicon oxycarbide;
forming a memory hole in the stack of alternating layers of the first ayer of material and the second layer of material;
depositing a layer of blocking oxide on sides defining the memory hole;
depositing a layer of silicon directly atop the layer of blocking oxide to form a silicon channel that does not extend into the substrate:
depositing core oxide to fill the silicon channel;
removing the second layer of material to form spaces between the alternating layers of the first layer of material; and
one of depositing a third layer of material to partially fill the spaces to leave gaps therein or depositing a fourth layer of material to fill the spaces,
wherein the first layer of material is ruthenium, the third layer of material if used is oxide, and the fourth layer of material if used is a low k oxide.
12. A system for forming a plurality of nonvolatile memory cells, comprising:
an apparatus configured to form, on a substrate, a stack of alternating layers including a first layer of material different from the first layer of material, wherein the first layer of material is ruthenium;
an apparatus configured to form a memory hole in the stack of alternating layers of the first layer of material and the second layer of material;
an apparatus configured to deposit a layer of blocking oxide on sides defining the memory hole, deposit a layer of silicon directly atop the layer of blocking oxide to form a silicon channel that does not extend into the substrate, and deposit a core oxide to fill the silicon channel;
an apparatus configured to remove the second layer of material to form pac between the alternating layers of the first layer of material; and
an apparatus configured to one of deposit a third layer of material to partially fill the spaces to leave air gaps therein or deposit a fourth layer of material to fill the spaces.
13. The system of claim 12 , wherein the second layer of material is carbon, silicon, silicon carbide, or silicon oxycarbide the third layer of material if used is oxide, and the fourth layer of material if used is low k oxide.
14. The system of claim 13 , wherein the low k oxide is one of silicon oxide or silicon dioxide having a dielectric constant from about 3.5 to about 4.1.
15. The system of claim 12 , wherein the apparatus configured to one of deposit the third layer of material to partially fill the spaces to leave air gaps therein or deposit the fourth layer of material in the spaces is one of a chemical vapor deposition apparatus or an atomic layer deposition apparatus.
16. The system of claim 12 , wherein the apparatus configured to deposit the first layer of material is a physical vapor deposition apparatus and the apparatus configured to deposit the second layer of material is a chemical vapor deposition apparatus.
17. The system of claim 12 , wherein the apparatus configured to deposit the layer of blocking oxide, deposit the layer of silicon, and deposit the core oxide is one of a chemical vapor deposition apparatus or an atomic layer deposition apparatus.
18. The system of claim 12 , wherein the apparatus configured to remove the second layer of material is one of an isotropic etch apparatus that uses an oxygen containing gas or a selective oxidation apparatus that uses rapid thermal oxidation, radical oxidation, or remote plasma oxidation.
19. The system of claim 12 , wherein the apparatus configured to forb the memory hole is a dry etching apparatus that uses an oxygen containing gas.
20. The system of claim 12 , further comprising an apparatus configured to, after depositing the core oxide to fill the silicon channel, deposit a layer of insulating material to cover a last layer of the stack of alternating layers and the memory hole.