Solid-state image pickup element and manufacturing method thereof, and electronic device
The present disclosure relates to a solid-state image pickup element in order to enable inhibition of a variation in the photoelectric conversion characteristic of an organic photoelectric conversion film due to atmospheric exposure and a manufacturing method of the solid-state image pickup element, and an electronic device. The solid-state image pickup element includes: a photoelectric conversion film formed above a semiconductor substrate; and a sidewall sealing a side face of the photoelectric conversion film. The sidewall includes a re-deposited film of a film directly under the sidewall. The present disclosure is applicable to, for example, a CMOS image sensor or the like.
1. A solid-state image pickup element, comprising:
a photoelectric conversion film above a semiconductor substrate;
a plurality of lower electrodes beneath the photoelectric conversion film; and
a sidewall that seals a side face of the photoelectric conversion film, wherein
the sidewall includes a first film,
the first film is a re-deposited film of a second film,
the second film is directly under the sidewall, and
the second film is between the plurality of lower electrodes.
2. The solid-state image pickup element according to claim 1 , further comprising
an upper electrode on the photoelectric conversion film, wherein
each lower electrode of the plurality of lower electrodes corresponds to a respective pixel, and
a side face of the upper electrode is covered with the sidewall.
3. The solid-state image pickup element according to claim 2 , wherein the upper electrode corresponds to the respective pixel.
4. The solid-state image pickup element according to claim 1 , wherein the second film includes an insulating film.
5. The solid-state image pickup element according to claim 1 , wherein the second film includes one any material of SiO, SiCO, AlO, AlN, SiN, SiON, SiCN, or SiCNO.
6. The solid-state image pickup element according to claim 2 , further comprising
a dummy film in a layer of a peripheral circuit unit outside a pixel array unit, wherein
a depth of the layer of the peripheral circuit unit is identical to a depth of a layer including the plurality of lower electrodes,
a polishing rate of the dummy film is different from a polishing rate of the second film.
7. The solid-state image pickup element according to claim 6 , wherein the polishing rate of the dummy film is lower than the polishing rate of the second film.
8. The solid-state image pickup element according to claim 6 , wherein the dummy film includes one of SiN, SiON, SiCO, SiCN, SiCNO, ITO, or IZO.
9. The solid-state image pickup element according to claim 6 , wherein a height of an upper face of the dummy film is identical to or lower than a height of an upper face of each lower electrode of the plurality of lower electrodes.
10. An electronic device, comprising:
a solid-state image pickup element, wherein the solid-state image pickup element comprises:
a photoelectric conversion film above a semiconductor substrate;
a plurality of lower electrodes beneath the photoelectric conversion film; and
a sidewall that seals a side face of the photoelectric conversion film, wherein
the sidewall includes a first film,
the first film is a re-deposited film of a second film,
the second film is directly under the sidewall, and
the second film is between the plurality of lower electrodes.