Semiconductor device
The semiconductor device includes a semiconductor substrate of first conductivity type including a cell area and a peripheral area surrounding cell area on a principal surface thereof, a first diffusion layer which is disposed in peripheral area, surrounds the cell area and has a second conductivity type different from the first conductivity type, an electrode which is disposed in the peripheral area, is in contact with the principal surface through an opening provided in an insulating member and is connected to the first diffusion layer, and a second diffusion layer of the first conductivity type which is formed on the principal surface of a region enclosed in the electrode distant from the first diffusion layer when viewed in a direction perpendicular to the principal surface and includes a linear portion having a first width and a curved portion having a portion with a second width greater than the first width.
1. A semiconductor device, comprising:
a semiconductor substrate of a first conductivity type comprising a cell area and a peripheral area surrounding the cell area on a principal surface thereof;
a first diffusion layer which is disposed in the peripheral area, surrounds the cell area and has a second conductivity type different from the first conductivity type;
an electrode which is disposed in the peripheral area, is in contact with the principal surface through an opening provided in an insulating member and is connected to the first diffusion layer; and
a second diffusion layer of the first conductivity type which is formed on the principal surface of a region enclosed in the electrode distant from the first diffusion layer when viewed in a direction perpendicular to the principal surface and comprises a linear portion having a first width and a curved portion having a portion with a second width greater than the first width,
wherein an impurity concentration of the second diffusion layer is higher than an impurity concentration of the semiconductor substrate.
2. The semiconductor device according to claim 1 , wherein the electrode is disposed to surround the cell area.
3. The semiconductor device according to claim 2 , wherein the second diffusion layer is disposed to surround the first diffusion layer.
4. The semiconductor device according to claim 2 , wherein the linear portion has a first impurity concentration and the curved portion has a second impurity concentration lower than the first impurity concentration.
5. The semiconductor device according to claim 1 , wherein the second diffusion layer is disposed to surround the first diffusion layer.
6. The semiconductor device according to claim 5 , wherein the linear portion has a first impurity concentration and the curved portion has a second impurity concentration lower than the first impurity concentration.
7. The semiconductor device according to claim 1 , wherein the linear portion has a first impurity concentration and the curved portion has a second impurity concentration lower than the first impurity concentration.
8. A semiconductor device, comprising:
a semiconductor substrate of a first conductivity type comprising a cell area and a peripheral area surrounding the cell area on a principal surface thereof;
a first diffusion layer which is disposed in the peripheral area, surrounds the cell area and has a second conductivity type different from the first conductivity type;
an electrode which is disposed in the peripheral area, is in contact with the principal surface through an opening provided in an insulating member and is connected to the first diffusion layer; and
a second diffusion layer of the first conductivity type which is formed on the principal surface of a region enclosed in the electrode distant from the first diffusion layer when viewed in a direction perpendicular to the principal surface and comprises a linear portion having a first impurity concentration and a curved portion having a portion with a second impurity concentration lower than the first impurity concentration,
wherein an impurity concentration of the second diffusion layer is higher than an impurity concentration of the semiconductor substrate.
9. The semiconductor device according to claim 8 , wherein the electrode is disposed to surround the cell area.
10. The semiconductor device according to claim 9 , wherein the second diffusion layer is disposed to surround the first diffusion layer.
11. The semiconductor device according to claim 8 , wherein the second diffusion layer is disposed to surround the first diffusion layer.