Device with multiple resistance switches with different switching characteristics
View Patent ↗A device according to examples of the present disclosure includes a crossbar array including a cell. The cell includes a first resistance switch and a second resistance switch connected in series with the first resistance switch. The first and second resistance switches have different switching characteristics. One of the first and second resistance switches may act as a switch, while the other of the first and second resistance switches may weight the switching behavior of the one that acts as the switch.
1. A device comprising:
a crossbar array comprising a plurality of memristor-based spatio-temporal (MST) synapses, wherein a respective MST synapse provides spatial and temporal weighting functions, and wherein the MST synapse comprises:
a first resistance switch comprising a first memristor connected in parallel with a resistor; and
a second resistance switch comprising a second memristor and connected in series with the first resistance switch;
wherein the first and second resistance switches have different switching voltages to switch between on and off states.
2. The device of claim 1 wherein the first and second memristors have same on-and-off resistance states.
3. The device of claim 1 wherein:
the resistor is a first resistor; and
the second resistance switch comprises a second resistor connected in parallel with the second memristor.
4. The device of claim 1 wherein:
the first resistance switch comprises a first memristor;
the second resistance switch comprises a second memristor; and
the first and second memristors have different on-and-off resistance states.
5. The device of claim 1 wherein:
one of the first resistance switch and the second resistance switch provides a temporal weighting function of the MST synapse; and
the other of the first resistance switch and the second resistance switch provides a spatial weighting function of the MST synapse.
6. A memristor-based spatio-temporal (MST) synapse that provides spatial and temporal weighting functions, the MST synapse comprising:
a first switch comprising a first memristor connected in parallel with a resistor; and
a second switch comprising a second memristor;
wherein the first switch is connected in series with the second switch.
7. The MST synapse of claim 6 , wherein the first and second switches have different switching voltages to switch between on and off states.
8. The MST synapse of claim 6 , wherein the MST synapse comprises a multilayer structure, wherein the first memristor and the resistor are positioned side by side between a first conducting layer and a second conducting layer, and wherein the second memristor is positioned between the second conducting layer and a third conducting layer.
9. The MST synapse of claim 8 , wherein the first memristor comprises an oxide of tantalum.
10. The MST synapse of claim 8 , wherein the resistor comprises one or more of: polysilicon, TaAl, and TaSiW.
11. A device comprising:
a crossbar array comprising a plurality of memristor-based spatio-temporal (MST) synapses, wherein a respective MST synapse provides spatial and temporal weighting functions, and wherein the MST synapse comprises:
a first resistance switch comprising a first memristor; and
a second resistance switch comprising a second memristor connected in series with the first resistance switch;
wherein the first and second resistance switches have different switching voltages to switch between on and off states,
wherein the first and second memristors have different on-and-off resistance states.