IP Library › Granted Patent US 10,971,371
Granted Patent B2
US 10,971,371 · App. 16/881,898 · Granted Apr 6, 2021

Multi-chip structure and method of forming same

Inventors: Chen-Hua Yu (Hsinchu, TW); Der-Chyang Yeh (Hsinchu, TW)
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
H01L21/31053H01L21/565H01L21/568H01L21/6835H01L23/3128H01L23/481H01L23/49838H01L24/05H01L24/14H01L24/17H01L24/19H01L24/81H01L24/92H01L25/0657H01L25/18H01L25/50H01L24/13H01L2221/68381H01L2224/02379H01L2224/0345H01L2224/0401H01L2224/04105H01L2224/05008H01L2224/0572H01L2224/05569H01L2224/05572H01L2224/12105H01L2224/131H01L2224/13022H01L2224/16146H01L2224/16235H01L2224/1703H01L2224/17181H01L2224/73204H01L2224/73259H01L2224/81005H01L2224/81815H01L2224/9202H01L2224/92224H01L2225/06513H01L2225/06517H01L2225/06527H01L2225/06541H01L2225/06562H01L2225/06568H01L2924/12042H01L2924/15311H01L2924/181H01L2924/18161
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Quick Facts
Patent No.
US 10,971,371
App. No.
16/881,898
Granted
Apr 6, 2021
Kind
B2
Abstract

A device includes a first chip is embedded in a molding compound layer, wherein the first chip is shifted toward a first direction, a second chip over the first chip and embedded in the molding compound layer, wherein the second chip is shifted toward a second direction opposite to the first direction and a plurality of bumps between the first chip and the second chip.

Claims (29)

1. A device comprising:

a molding compound layer, the molding compound layer having a first sidewall and a second sidewall opposite to the first sidewall;

a first chip embedded in the molding compound layer, wherein a first sidewall of the first chip is coplanar with the first sidewall of the molding compound layer, and wherein a second sidewall of the first chip is spaced apart from the second sidewall of the molding compound layer; and

a second chip over the first chip and embedded in the molding compound layer, wherein a first sidewall of the second chip is coplanar with the second sidewall of the molding compound layer, and wherein a second sidewall of the second chip is spaced apart from the first sidewall of the molding compound layer.

2. The device of claim 1 , further comprising a plurality of bumps electrically coupling the first chip to the second chip.

3. The device of claim 1 , wherein a portion of the molding compound layer is interposed between the first chip and the second chip.

4. The device of claim 1 , further comprising a redistribution structure over the molding compound layer, the first chip being interposed between the redistribution structure and the second chip, wherein a first sidewall of the redistribution structure is coplanar with the first sidewall of the molding compound layer, and wherein a second sidewall of the redistribution structure is coplanar with the second sidewall of the molding compound layer.

5. The device of claim 1 , wherein the first chip comprises a plurality of logic circuits, and wherein the second chip comprises a stack of memory dies.

6. The device of claim 4 , wherein a width of the redistribution structure is greater than a width of the first chip and a width of the second chip.

7. The device of claim 4 , wherein the second chip and the redistribution structure are separated by a portion of the molding compound layer.

8. A device comprising:

a molding compound layer;

a first chip embedded in the molding compound layer, a first sidewall of the first chip being in physical contact with the molding compound layer; and

a second chip over the first chip and embedded in the molding compound layer, a first sidewall of the second chip being in physical contact with the molding compound layer, wherein a portion of the first chip extends beyond the first sidewall of the second chip, and wherein a portion of the second chip extends beyond the first sidewall of the first chip.

9. The device of claim 8 , further comprising a redistribution structure in electrical contact with the first chip, the first chip electrically coupling the redistribution structure to the second chip.

10. The device of claim 9 , wherein a width of the redistribution structure is greater than a width of the first chip and a width of the second chip.

11. The device of claim 9 , further comprising a plurality of bumps bonded to the redistribution structure, the redistribution structure being interposed between the plurality of bumps and the first chip.

12. The device of claim 9 , wherein a first sidewall of the redistribution structure is coplanar with a second sidewall of the first chip, the second sidewall of the first chip being opposite to the first sidewall of the first chip.

13. The device of claim 12 , wherein a second sidewall of the redistribution structure is coplanar with a second sidewall of the second chip, the second sidewall of the second chip being opposite to the first sidewall of the second chip.

14. The device of claim 8 , further comprising a plurality of bumps interposed between the first chip and the second chip, wherein the plurality of bumps are encapsulated by the molding compound layer.

15. A method comprising:

attaching a first chip to a carrier;

bonding a second chip to the first chip; and

encapsulating the first chip and the second chip in a molding compound layer, the molding compound layer being in physical contact with a first sidewall of the first chip and a first sidewall of the second chip, wherein a portion of the first chip extends beyond the first sidewall of the second chip, and wherein a portion of the second chip extends beyond the first sidewall of the first chip.

16. The method of claim 15 , forming a redistribution structure over the second chip and the molding compound layer.

17. The method of claim 16 , bonding a plurality of bumps to the redistribution structure, the redistribution structure electrically coupling the plurality of bumps to the second chip.

18. The method of claim 16 , further comprising, before forming the redistribution structure, planarizing the molding compound layer to expose the second chip.

19. The method of claim 16 , wherein a first portion of the redistribution structure extends beyond the first sidewall of the first chip.

20. The method of claim 19 , wherein a second portion of the redistribution structure extends beyond the first sidewall of the second chip.

Continuity (6)
Continuation 16048013 · Jul 27, 2018
Continuation 15594756 · May 15, 2017
Continuation 15085837 · Mar 30, 2016
Continuation 14177947 · Feb 11, 2014
Provisional Application 61865411 · Aug 13, 2013
Related Publication 20200286741A1 · Sep 10, 2020