Laser lift off systems and methods that overlap irradiation zones to provide multiple pulses of laser irradiation per location at an interface between layers to be separated
Laser lift off systems and methods overlap irradiation zones to provide multiple pulses of laser irradiation per location at the interface between layers of material to be separated. To overlap irradiation zones, the laser lift off systems and methods provide stepwise relative movement between a pulsed laser beam and a workpiece. The laser irradiation may be provided by a non-homogeneous laser beam with a smooth spatial distribution of energy across the beam profile. The pulses of laser irradiation from the non-homogenous beam may irradiate the overlapping irradiation zones such that each of the locations at the interface is exposed to different portions of the non-homogeneous beam for each of the multiple pulses of the laser irradiation, thereby resulting in self-homogenization. Thus, the number of the multiple pulses of laser irradiation per location is generally sufficient to provide the self-homogenization and to separate the layers of material.
1. A laser lift off method for separating layers of material, the method comprising:
providing a workpiece including at least first and second layers of material;
generating pulses of laser irradiation by a non-homogenous laser beam with a smooth spatial distribution of energy;
directing the laser beam through one of the first and second layers of material to an interface of the first and second layers of material such that a beam spot is formed by the at least one non-homogenous laser beam at the interface; and
moving at least one of the non-homogenous laser beam and the workpiece in a stepwise manner such that the pulses of the laser irradiation irradiate overlapping irradiation zones corresponding to the beam spots formed at the interface between the first and second layers, wherein the irradiation zones are overlapped such that locations at the interface are exposed to multiple pulses of the laser irradiation, wherein each of the locations at the interface is exposed to a different portion of the beam spot for each of the multiple pulses of the laser irradiation to provide self-homogenization across the interface, and wherein the multiple pulses of the laser irradiation at the locations are sufficient to cause separation of the layers.
2. The laser lift off method of claim 1 wherein the irradiation zones are overlapped with a pitch of ½ a width of the beam spot.
3. The laser lift off method of claim 2 wherein the beam spot and irradiation zones are generally square shaped, and wherein each of the locations at the interface is exposed to four pulses of laser irradiation.
4. The laser lift off method of claim 2 wherein the beam spot and irradiation zones are generally hexagonal shaped, and wherein each of the locations at the interface is exposed to three pulses of laser irradiation.
5. The laser lift off method of claim 1 wherein the pulses of the laser irradiation irradiate overlapping irradiation zones non-consecutively.
6. The laser lift off method of claim 1 wherein the workpiece is moved in the stepwise manner between the irradiations.
7. The laser lift off method of claim 1 wherein the non-homogenous laser beam is moved in the stepwise manner in between the irradiations.
8. The laser lift off method of claim 1 wherein the smooth spatial distribution of energy forms a Gaussian profile.
9. The laser lift off method of claim 1 wherein the beam spot is larger than 1 mm 2 .
10. The laser lift off method of claim 1 wherein the laser beam is generated from an excimer laser.
11. The laser lift off method of claim 1 wherein the laser beam is generated from a diode pumped solid state (DPSS) laser.
12. The laser lift off method of claim 1 wherein the laser beam is generated from a fiber laser.
13. The laser lift off method of claim 1 wherein the pulses are less than 200 ns.
14. The laser lift off method of claim 1 wherein the first and second layers include a substrate and at least one film formed on the substrate.
15. The laser lift off method of claim 14 wherein the substrate is a sapphire substrate, and wherein the at least one film is a GaN film.
16. The laser lift off method of claim 1 wherein generating the pulses of laser irradiation includes shaping the laser beam and modifying the laser beam such that the non-homogeneous laser beam has smooth spatial distribution of energy gradually decreasing from a central region of the beam toward edges of the beam.
17. The laser lift off method of claim 1 wherein generating pulses of laser irradiation includes generating an ultrashort pulse laser beam having a pulse duration less than 1 nanosecond using an ultrafast laser.
18. A laser lift off method for separating layers of material, the method comprising:
providing a workpiece including at least first and second layers of material;
generating pulses of laser irradiation by a laser beam;
directing the laser beam through one of the first and second layers of material to an interface of the first and second layers of material such that a beam spot is formed by the at least one laser beam at the interface; and
moving at least one of the laser beam and the workpiece in a stepwise manner such that the pulses of the laser irradiation irradiate overlapping irradiation zones corresponding to the beam spots formed at the interface between the first and second layers, wherein the irradiation zones are overlapped with a pitch of ½ a width of the beam spot such that locations at the interface are exposed to multiple pulses of the laser irradiation, wherein each of the locations at the interface is exposed to a different portion of the beam spot for each of the multiple pulses of the laser irradiation, and wherein the multiple pulses of the laser irradiation at the locations are sufficient to cause separation of the layers.
19. The laser lift off method of claim 18 wherein the laser beam has feathered edges.
20. The laser lift off method of claim 18 wherein the laser beam is non-homogenous.
21. The laser lift off method of claim 18 wherein the laser beam is larger than 1 mm 2 .
22. The laser lift off method of claim 18 wherein one of the layers of material is unpolished sapphire, and wherein the laser beam is directed through the unpolished sapphire.