Vacuum suction apparatus
A vacuum suction apparatus includes a semiconductor substrate with a top portion having grooves and a bottom portion having through holes, wherein each said groove correspondingly connects with at least one said through hole, and the groove has a width greater than a width of the through hole; and a cover plate disposed on a top surface of the semiconductor substrate. At least one edge of the vacuum suction apparatus has a vacuum chamber, which connects with the grooves. In another embodiment, the cover plate is replaced with a vacuum cover disposed above the semiconductor substrate, wherein the vacuum cover and the semiconductor substrate construct a vacuum chamber.
1. A vacuum suction apparatus, comprising:
a semiconductor substrate with a top portion having a plurality of first grooves and a bottom portion having a plurality of through holes, each first groove of said plurality of first grooves correspondingly connecting with at least one through hole of said plurality of through holes, and each first groove of the plurality of first grooves having a width greater than a width of each through hole of the plurality of through holes; and
a cover plate disposed on a top surface of the semiconductor substrate;
wherein a vacuum chamber, connecting with the plurality of first grooves, is disposed on at least one edge of the vacuum suction apparatus;
wherein each first groove of the plurality of first grooves is a continuous groove disposed longitudinally, each continuous groove of said plurality of first continuous grooves correspondingly connecting with the at least one through hole of the plurality of through holes, and the first grooves of a same longitudinal line being connected directly but the first grooves belonging to different longitudinal lines being not connected directly;
wherein the bottom portion of the semiconductor substrate includes a replaceable buffer layer, from which the plurality of through holes pass;
wherein the bottom portion of the semiconductor substrate has a plurality of second grooves disposed between adjacent through holes of the plurality of through holes, each second groove of the plurality of second grooves having a width greater than a width of a miniature device.
2. The apparatus of claim 1 , wherein the semiconductor substrate comprises a silicon wafer.
3. The apparatus of claim 1 , wherein each continuous first groove of the plurality of grooves has a side being sloped and narrowed towards the corresponding at least one through hole of the plurality of through holes.
4. The apparatus of claim 1 , wherein the vacuum chamber is perpendicular to the plurality of continuous grooves and directly connects with the plurality of continuous grooves.
5. The apparatus of claim 1 , wherein a diameter size of each of the plurality of through holes is smaller than 10 micrometers, and a lateral width of each continuous groove of the plurality of continuous grooves is smaller than 100 micrometers.
6. The apparatus of claim 1 , wherein each second groove of the plurality of the second grooves is a continuous groove disposed longitudinally and/or laterally at the bottom portion of the semiconductor substrate.
7. The apparatus of claim 1 , wherein each second groove of the plurality of the second grooves is a discontinuous groove, arranged in matrix form, disposed at the bottom portion of the semiconductor substrate.
8. The apparatus of claim 1 , wherein the cover plate comprises a silicon wafer.
9. The apparatus of claim 1 , wherein the cover plate comprises glass.
10. The apparatus of claim 1 , wherein the cover plate comprises sapphire.
11. A vacuum suction apparatus, comprising:
a semiconductor substrate with a top portion having a plurality of first grooves and a bottom portion having a plurality of through holes, each first groove of said plurality of first grooves correspondingly connecting with at least one through hole of said plurality of through holes, and each first groove of the plurality of first grooves having a width greater than a width of each through hole of the plurality of through holes; and
a vacuum cover disposed above the semiconductor substrate the vacuum cover and the semiconductor substrate defining a vacuum chamber;
wherein each first groove of the plurality of first grooves is a continuous groove disposed longitudinally, each continuous groove of said plurality of first continuous grooves correspondingly connecting with the at least one through hole of the plurality of through holes, and the first grooves of a same longitudinal line being connected directly but the first grooves belonging to different longitudinal lines being not connected directly;
wherein the bottom portion of the semiconductor substrate includes a replaceable buffer layer, from which the plurality of through holes pass; at least one post, disposed between a bottom surface of the vacuum cover and a top surface of the semiconductor substrate, for supporting the vacuum cover.
12. The apparatus of claim 11 , wherein the vacuum cover comprises a silicon wafer.
13. The apparatus of claim 11 , wherein the vacuum cover comprises glass.
14. The apparatus of claim 11 , wherein the vacuum cover comprises sapphire.
15. The apparatus of claim 11 , wherein the bottom portion of the semiconductor substrate has a plurality of second grooves disposed between adjacent through holes of the plurality of through holes, each second groove of the plurality of second grooves having a width greater than a width of a miniature device.
16. The apparatus of claim 15 , wherein each second groove of the plurality of the second grooves is a continuous groove disposed longitudinally and/or laterally at the bottom portion of the semiconductor substrate.
17. The apparatus of claim 15 , wherein each second groove of the plurality of the second grooves is a discontinuous groove, arranged in matrix form, disposed at the bottom portion of the semiconductor substrate.
18. The apparatus of claim 11 , wherein the semiconductor substrate comprises a silicon wafer.