Tri-layer STI liner for nanosheet leakage control

1. A method of forming a semiconductor structure, the method comprising:

etching a nanosheet stack epitaxially grown on a semiconductor substrate to form a plurality of fins;

forming a recess within the semiconductor substrate, wherein the recess is located between adjacent fins of the plurality of fins on the semiconductor substrate;

forming a first liner in the semiconductor structure within the recess, above top surfaces of the semiconductor substrate, and on top surfaces and sidewalls of the plurality of fins, the first liner comprising a first oxide material;

forming a second liner directly above the first liner;

forming a third liner directly above the second liner, the third liner comprising a nitride material,

wherein the second liner comprises a second oxide material capable of creating a dipole effect that neutralizes positive charges generated within the third liner and between the third liner and the first liner;

depositing a shallow trench isolation layer comprising a dielectric material directly above the third liner, the dielectric material filling a remaining space within the recess; and

sequentially removing the dielectric material, the third liner, the second liner, and the first liner from the top surfaces and the sidewalls of the plurality of fins and from the top surfaces of the semiconductor substrate, wherein remaining portions of the dielectric material, the first liner, the second liner, and the third liner within the recess in the semiconductor substrate form a shallow trench isolation region between the adjacent fins of the plurality of fins.

2. The method of claim 1 , wherein the first oxide material is silicon dioxide and the nitride material is silicon nitride.

3. The method of claim 1 , wherein the second oxide material capable of creating the dipole effect comprises at least one of aluminum oxide, titanium oxide, hafnium oxide, zirconium oxide, and magnesium oxide.

4. The method of claim 1 , further comprising:

epitaxially growing the nanosheet stack on the semiconductor substrate, the nanosheet stack comprising an alternating vertical-stacked sequence of a first nanosheet comprising a first semiconductor material and a second nanosheet comprising a second semiconductor material.

5. The method of claim 4 , wherein the first semiconductor material comprises silicon and the second semiconductor material comprises silicon germanium.

6. The method of claim 4 , wherein the first semiconductor material comprises silicon germanium and the second semiconductor material comprises silicon.

7. The method of claim 1 , further comprising:

forming a dummy gate over the plurality of fins; and

forming source drain regions on opposing ends of the plurality of fins not covered by the dummy gate.

8. The method of claim 7 , further comprising:

replacing the dummy gate with a metal gate.

9. The method of claim 1 , wherein a thickness of the second oxide material forming the second liner is sufficient to cancel a charging effect of the nitride material forming the third liner, and wherein together the first liner, the second liner and the third liner form a tri-layer shallow trench isolation (STI) liner that can be applied to n-type nanosheet field effect transistors and p-type nanosheet field effect transistors.