Processing system for a catalytic layer of a noble metal formed on a surface of a substrate

1. A processing system comprising one or more processing devices, the one or more processing devices being configured to:

detect an X-ray intensity of character X-rays that are generated by irradiating a catalytic layer of a noble metal formed on a surface of a substrate with X-rays;

obtain, as a first determination parameter, any one of the detected X-ray intensity and a parameter calculated using the X-ray intensity; and

determine, based at least on the first determination parameter, whether or not the catalytic layer has been formed into a state suitable for etching the surface of the substrate,

detect, using a laser microscope or a scanning electron microscope, a detection parameter in association with the catalytic layer;

obtain, as a second determination parameter, the detection parameter from the laser microscope or the scanning electron microscope or a parameter calculated using the detection parameter; and

determine, based on the second determination parameter in addition to the first determination parameter, whether or not the catalytic layer has been formed into a form suitable for the etching.

2. The processing system according to claim 1 , wherein the one or more processing devices are configured to:

calculate, from the detected X-ray intensity, a deposition amount of the noble metal per unit area in the catalytic layer; and

obtain, as the first determination parameter, the calculated deposition amount.

3. The processing system according to claim 1 , wherein the one or more processing devices are configured to determine, based on whether or not the first determination parameter is within a predetermined range, whether or not the catalytic layer is formed into a state suitable for the etching.

4. The processing system according to claim 1 , wherein the one or more processing devices are configured to determine, based on whether or not the second determination parameter is within a predetermined range, whether or not the catalytic layer has been formed into a form suitable for the etching.

5. The processing system according to claim 1 , wherein the one or more processing devices are configured to:

detect, as the detection parameter, using the laser microscope, a thickness of the catalytic layer; and

obtain, as the second determination parameter, the detected thickness of the catalytic layer.

6. The processing system according to claim 1 , wherein the one or more processing devices are configured to obtain, as the second determination parameter, a parameter calculated using both the X-ray intensity and the detection parameter from the laser microscope or the scanning electron microscope.

7. The processing system according to claim 6 , wherein the one or more processing devices are configured to:

detect, as the detection parameter, using the laser microscope, a thickness of the catalytic layer;

calculate, using both the X-ray intensity and the detected thickness of the catalytic layer, a density of the catalytic layer; and

obtain, as the second determination parameter, the calculated density of the catalytic layer.

8. A processing system comprising one or more processing devices, the one or more processing devices being configured to:

detect an X-ray intensity of character X-rays that are generated by irradiating a catalytic layer of a noble metal formed on a surface of a substrate with X-rays;

obtain, as a first determination parameter, any one of the detected X-ray intensity and a parameter calculated using the X-ray intensity;

determine, based at least on the first determination parameter, whether or not the catalytic layer has been formed into a state suitable for etching the surface of the substrate; and

perform, if it is determined that the catalytic layer has not been formed into a state suitable for the etching, at least one of: a notification that the catalytic layer is not in a suitable state and a change of conditions for forming the catalytic layer of the noble metal onto the substrate.

9. The processing system according to claim 8 , wherein the one or more processing devices are configured to:

detect, using a laser microscope or a scanning electron microscope, a detection parameter in association with the catalytic layer; and

obtain, as the first determination parameter, a parameter calculated using both the X-ray intensity and the detection parameter detected using the laser microscope or the scanning electron microscope.

10. The processing system according to claim 9 , wherein the one or more processing devices are configured to:

detect, as the detection parameter, using the laser microscope, a thickness of the catalytic layer;

calculate, using both the X-ray intensity and the detected thickness of the catalytic layer, a density of the catalytic layer; and

obtain, as the first determination parameter, the calculated density of the catalytic layer.

11. A processing system comprising one or more processing devices, the one or more processing devices being configured to:

detect an X-ray intensity of character X-rays that are generated by irradiating a catalytic layer of a noble metal formed on a surface of a substrate with X-rays;

calculate, from the detected X-ray intensity, a deposition amount of the noble metal per unit area in the catalytic layer;

detect a thickness of the catalytic layer by using a laser microscope;

calculate, using both the calculated deposition amount and the detected thickness of the catalytic layer, a density of the catalytic layer; and

determine, based at least on the calculated density, whether or not the catalytic layer has been formed into a state suitable for etching the surface of the substrate.