IP Library › Granted Patent US 10,978,533
Granted Patent B2
US 10,978,533 · App. 16/679,702 · Granted Apr 13, 2021

Array substrate structure and display device

Inventor: Kuan-Feng Lee (Miao-Li County, TW)
Assignee: INNOLUX CORPORATION
H01L27/3262H01L27/1218H01L27/1225H01L27/1251H01L27/3276H01L27/1255H01L27/323H01L29/7869H01L29/78675H01L2224/16225
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Quick Facts
Patent No.
US 10,978,533
App. No.
16/679,702
Granted
Apr 13, 2021
Kind
B2
Abstract

An array substrate structure is provided, which includes a substrate with a first surface and a second surface opposite to the first surface. A first TFT is on the first surface of the substrate, and a second TFT is on the second surface of the substrate. A through via passes through the substrate, and the first TFT is electrically connected to the second TFT through the through via.

Claims (34)

1. An array substrate structure, comprising:

a substrate;

a first semiconductor layer disposed on the substrate;

a first protection layer disposed on the first semiconductor layer;

a first touch sensing electrode layer disposed on the first protection layer; and

a light shielding layer being overlapped with at least a part of the first semiconductor layer,

wherein the light shielding layer is coplanar with the first touch sensing electrode layer.

2. The array substrate structure as claimed in claim 1 , further comprising a light-emitting element disposed on the substrate, and the light-emitting element is not overlapped with the light shielding layer.

3. The array substrate structure as claimed in claim 1 , wherein the first semiconductor layer is connected to a data line through a through via, and the light shielding layer is overlapped with the through via.

4. The array substrate structure as claimed in claim 1 , wherein a storage capacitor is overlapped with the light shielding layer.

5. The array substrate structure as claimed in claim 4 , further comprising a gate electrode disposed on the substrate, a drain electrode disposed on the substrate, wherein a gate insulation layer is disposed between the gate electrode and the drain electrode, and the storage capacitor is built of the gate electrode, the drain electrode, and the gate insulation layer.

6. The array substrate structure as claimed in claim 1 , further comprising a second protection layer disposed on the light shielding layer.

7. The array substrate structure as claimed in claim 6 , wherein the second protection layer comprises organic material or inorganic material.

8. The array substrate structure as claimed in claim 1 , further comprising an external circuit electrically connected to the first semiconductor layer, wherein the external circuit and the first semiconductor layer are disposed on a same side of the substrate.

9. The array substrate structure as claimed in claim 8 , wherein the external circuit is overlapped with the first semiconductor layer.

10. The array substrate structure as claimed in claim 8 , further comprising a light-emitting element disposed on the substrate, and the light-emitting element is overlapped with the external circuit.

11. The array substrate structure as claimed in claim 1 , further comprising a second semiconductor layer disposed on the substrate, an insulation layer disposed on the substrate, wherein the first semiconductor layer and the second semiconductor layer are respectively disposed on different sides of the insulation layer.

12. The array substrate structure as claimed in claim 11 , wherein the first semiconductor layer and the second semiconductor layer are different materials.

13. The array substrate structure as claimed in claim 1 , further comprising a second semiconductor layer disposed on a side of the substrate, wherein the first semiconductor layer and the second semiconductor layer are disposed on different sides of the substrate, the first semiconductor layer is a part of a first TFT, the second semiconductor layer is a part of a second TFT, and the second TFT comprises a second gate electrode,

wherein a through via passes through the substrate, and the first semiconductor layer of the first TFT and the second gate electrode of the second TFT are electrically connected through the through via.

14. The array substrate structure as claimed in claim 1 , further comprising a second touch sensing electrode layer disposed on the substrate, wherein the second touch sensing electrode layer and the first touch sensing electrode layer are disposed on different sides of the substrate.

15. A display device, comprising:

a substrate;

a first semiconductor layer disposed on the substrate;

a first protection layer disposed on the first semiconductor layer;

a first touch sensing electrode layer disposed on the first protection layer; and

a light shielding layer being overlapped with at least a part of the first semiconductor layer,

wherein the light shielding layer is coplanar with the first touch sensing electrode layer; and

a light-emitting element disposed on the substrate.

16. The display device as claimed in claim 15 , wherein the light-emitting element is not overlapped with the light shielding layer.

17. The display device as claimed in claim 15 , wherein the first semiconductor layer is connected to a data line through a through via, and the light shielding layer is overlapped with the through via.

18. The display device as claimed in claim 15 , wherein a storage capacitor is overlapped with the light shielding layer.

19. The display device as claimed in claim 15 , further comprising a second protection layer disposed on the light shielding layer.

20. The display device as claimed in claim 19 , wherein the second protection layer comprises organic material or inorganic material.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 11, 2019
From: LEE, KUAN-FENG
To: INNOLUX CORPORATION
Reel/Frame 050971/0322 →
Priority Claims (1)
TW 105121191 · Jul 5, 2016 · national
Continuity (2)
Continuation 15629912 · Jun 22, 2017
Related Publication 20200075703A1 · Mar 5, 2020