Array substrate having a recessed and light blocking portion and fabrication method thereof, and display device
An array substrate includes a base substrate, a transistor on the base substrate, a planarization layer on a side of the transistor away from the base substrate, a recessed portion on the planarization layer, and a light blocking portion in the recessed portion. The light blocking portion is configured to prevent a light from being incident upon an active layer.
1. An array substrate, comprising:
a base substrate;
a transistor on the base substrate, the transistor comprising an active layer;
a planarization layer on a side of the transistor away from the base substrate;
a recessed portion on the planarization layer, wherein the recessed portion has a ring shape and a projection of the recessed portion on the substrate at least surrounds a projection of the active layer on the substrate; and
a light blocking portion in the recessed portion, the light blocking portion being configured to prevent a light from being incident upon the active layer.
2. The array substrate according to claim 1 , wherein the light blocking portion is entirely in the recessed portion.
3. The array substrate according to claim 1 , wherein the recessed portion is an enclosed annular groove.
4. The array substrate according to claim 3 , wherein a groove width of the enclosed annular groove ranges from 3 μm to 4 μm.
5. The array substrate according to claim 1 , wherein the light blocking portion has a ring shape, and a projection of the light blocking portion on the substrate at least surrounds a projection of the active layer on the substrate.
6. The array substrate according to claim 5 , wherein the light blocking portion is of an enclosed annular shape.
7. The array substrate according to claim 1 , wherein:
the array substrate comprises a plurality of sub-pixels;
at least one of the plurality of sub-pixels comprises an open region and a non-open region on at least one side of the open region; and
the transistor is in the non-open region and the recessed portion is in the non-open region.
8. The array substrate according to claim 7 , further comprising a self-light-emitting unit, wherein the self-light-emitting unit is in the open region, the self-light-emitting unit is on a side of the planarization layer away from the base substrate, and a light emission side of the self-light-emitting unit faces to a side of the base substrate.
9. The array substrate according to claim 8 , wherein the self-light-emitting unit is an organic light-emitting diode.
10. The array substrate according to claim 9 , further comprising a pixel defining layer, wherein the pixel defining layer is on a side of the planarization layer away from the base substrate to define the sub-pixels.
11. The array substrate according to claim 10 , wherein a part of the pixel defining layer forms at least a part of the light blocking portion.
12. The array substrate according to claim 1 , wherein the light blocking portion is mainly formed of a black light absorbing material.
13. The array substrate according to claim 1 , wherein the transistor is a driving transistor.
14. An array substrate, comprising:
a base substrate;
a transistor on the base substrate, the transistor comprising an active layer;
a planarization layer on a side of the transistor away from the base substrate;
a recessed portion on the planarization layer, wherein a bottom of the recessed portion does not penetrate through the planarization layer; and
a light blocking portion in the recessed portion, the light blocking portion being configured to prevent a light from being incident upon the active layer.
15. The array substrate according to claim 14 , wherein a depth of the recessed portion accounts for 80%˜95% of a thickness of the planarization layer.
16. The array substrate according to claim 1 , wherein the array substrate is part of a display device.
17. A method for fabricating an array substrate, comprising:
providing a base substrate;
forming a transistor on the base substrate, the transistor comprising an active layer;
forming a planarization layer on the transistor;
forming a recessed portion on the planarization layer, wherein the recessed portion has a ring shape and a projection of the recessed portion on the substrate at least surrounds a projection of the active layer on the substrate; and
forming a light blocking portion in the recessed portion, the light blocking portion being configured to prevent a light from being incident upon the active layer.
18. The method for fabricating an array substrate according to claim 17 , further comprising: forming a self-light-emitting unit on a side of the planarization layer away from the base substrate.
19. The method for fabricating an array substrate according to claim 17 , wherein the forming of the recessed portion comprises:
forming the recessed portion on at least one side of the planarization layer facing to the active layer of the transistor through a dry etch process;
wherein etching gas used in the dry etch process is O 2 ; or
wherein etching gas used in the dry etch process is mixed gas of CF 4 and O 2 , and a volume flow rate of CF 4 in the mixed gas is 5%˜8%.
20. The method for fabricating an array substrate according to claim 17 , wherein a bottom of the recessed portion does not penetrate through the planarization layer.