Data storage devices and methods for manufacturing the same
A method of manufacturing a data storage device may include forming a magnetic tunnel junction layer on a substrate, irradiating a first ion beam on the magnetic tunnel junction layer to form magnetic tunnel junction patterns separated from each other, irradiating a second ion beam on the magnetic tunnel junction layer, and irradiating a third ion beam on the magnetic tunnel junction layer. The first ion beam may be irradiated at a first incident angle. The second ion beam may be irradiated at a second incident angle that may be smaller than the first incident angle. The third ion beam may be irradiated to form sidewall insulating patterns on sidewalls of the magnetic tunnel junction patterns based on re-depositing materials separated by the third ion beam on the sidewalls of the magnetic tunnel junction patterns.
1. A device, comprising:
a substrate;
a first interlayer insulating layer on the substrate;
a contact plug in the first interlayer insulating layer;
a magnetic tunnel junction pattern on the contact plug; and
a capping layer on a sidewall of the magnetic tunnel junction pattern,
wherein the magnetic tunnel junction pattern includes a first magnetic pattern, a tunnel barrier pattern on the first magnetic pattern, and a second magnetic pattern disposed on the tunnel barrier pattern,
wherein the sidewall of the magnetic tunnel junction pattern includes a first negative slope having an obtuse angle with a top surface of the substrate and a positive slope below the first negative slope having an acute angle with the top surface of the substrate, and
wherein a level of a connection point between the first negative slope and the positive slope is lower than a topmost surface of the first magnetic pattern and higher than a lowermost surface of the first magnetic pattern.
2. The device of claim 1 , further comprising a sidewall insulating layer between the capping layer and the magnetic tunnel junction pattern,
wherein the sidewall insulating layer is connected to the first interlayer insulating layer.
3. The device of claim 2 , wherein the sidewall insulating layer includes silicon oxide, and
the capping layer includes silicon nitride or silicon oxynitride.
4. The device of claim 2 , wherein the magnetic tunnel junction pattern is provided in plural,
the sidewall insulating layer is provided in plural,
the plurality of sidewall insulating layers are spaced apart from each other on the plurality of magnetic tunnel junction patterns, respectively.
5. The device of claim 2 , wherein the capping layer is thicker than the sidewall insulating layer.
6. The device of claim 1 , wherein an interface between the capping layer and the magnetic tunnel junction pattern includes oxygen.