On-device metrology using target decomposition
Methods and systems for more efficient X-Ray scatterometry measurements of on-device structures are presented herein. X-Ray scatterometry measurements of one or more structures over a measurement area includes a decomposition of the one or more structures into a plurality of sub-structures, a decomposition of the measurement area into a plurality of sub-areas, or both. The decomposed structures, measurement areas, or both, are independently simulated. The scattering contributions of each of the independently simulated decomposed structures are combined to simulate the actual scattering of the measured structures within the measurement area. In a further aspect, measured intensities and modelled intensities including one or more incidental structures are employed to perform measurement of structures of interest. In other further aspects, measurement decomposition is employed to train a measurement model and to optimize a measurement recipe for a particular measurement application.
1. An x-ray scatterometry based metrology system comprising:
an x-ray illumination source configured to provide an amount of x-ray illumination light directed to one or more structures disposed on a semiconductor wafer within a measurement area;
a detector configured to detect an amount of x-ray light reflected from or transmitted through the semiconductor wafer in response to the amount of x-ray illumination light and generate a plurality of output signals indicative of a measured scattering response from the one or more structures; and
a computing system configured to:
decompose the one or more structures into a plurality of sub-structures, the measurement area into a plurality of sub-areas, or both;
generate a structural model associated with each of the plurality of sub-structures, each of the plurality of sub-areas, or both;
generate a simulated scattering response associated with each of the structural models, independently;
combine each of the simulated scattering responses to generate a combined, simulated scattering response; and
determine values of one or more parameters of interest associated with the one or more structures based on the combined, simulated scattering response and the measured scattering response.
2. The x-ray scatterometry based metrology system of claim 1 , wherein the plurality of sub-structures includes different periodic shapes of the same periodicity.
3. The x-ray scatterometry based metrology system of claim 1 , wherein the plurality of sub-structures includes different periodic shapes having different periodicities.
4. The x-ray scatterometry based metrology system of claim 1 , wherein the plurality of sub-structures includes a shape repeated multiple times in a nearly periodic manner.
5. The x-ray scatterometry based metrology system of claim 1 , wherein the plurality of sub-structures includes a first structure having a relatively small period and a second structure having a relatively large period that is an integer multiple of the small period.
6. The x-ray scatterometry based metrology system of claim 1 , wherein each of the plurality of sub-areas is associated with a single structure or a decomposition of the single structure into a plurality of sub-structures.
7. The x-ray scatterometry based metrology system of claim 1 , wherein a contribution of each of the plurality of sub-areas to intensities of the combined, simulated scattering response at the detector scales in proportion to an area of each sub-area.
8. The x-ray scatterometry based metrology system of claim 1 , wherein the generating of the simulated scattering response associated with each of the structural models involves a computation of a scattered field associated with each structural model using an electromagnetic modelling solver.
9. The x-ray scatterometry based metrology system of claim 8 , wherein the generating of the simulated scattering response associated with each of the structural models involves propagating the scattered field through a system model to arrive at the simulated scattering responses associated with each structural model at the detector.
10. The x-ray scatterometry based metrology system of claim 1 , wherein the generation of the combined, simulated scattering response involves combining each of the simulated scattering responses coherently, incoherently, or a combination thereof.
11. The x-ray scatterometry based metrology system of claim 1 , wherein the computing system is further configured to:
communicate an indication of the values of the one or more parameters of interest to a fabrication tool that causes the fabrication tool to adjust a value of one or more process control parameters of the fabrication tool.
12. The x-ray scatterometry based metrology system of claim 1 , wherein the amount of x-ray illumination light is directed to the measurement spot at a plurality of angles of incidence, azimuth angles, or both.
13. The x-ray scatterometry based metrology system of claim 1 , wherein the x-ray illumination source is further configured to provide the amount of x-ray illumination light directed to a measurement spot at a plurality of different energy levels.
14. The x-ray scatterometry based metrology system of claim 1 , wherein the determining the values of the one or more parameters of interest is based on a model-based measurement model, a trained signal response metrology (SRM) measurement model, or a tomographic measurement model.
15. The x-ray scatterometry based metrology system of claim 1 , wherein the one or more structures includes a three-dimensional NAND structure or a dynamic random access memory (DRAM) structure.
16. The x-ray scatterometry based metrology system of claim 1 , wherein the one or more structures includes at least one structure of interest and at least one incidental structure, and wherein the combined, simulated scattering response includes modelled contributions from the at least one structure of interest and the at least one incidental structure.
17. The x-ray scatterometry based metrology system of claim 1 , wherein the one or more structures includes at least one structure of interest and at least one incidental structure, the computing system further configured to:
filter the measured scattering response to reduce a contribution from the at least one incidental structure, wherein the determining of the values of the one or more parameters of interest associated with the at least one structure of interest is based on the filtered, measured scattering response.
18. An x-ray scatterometry based metrology system comprising:
an x-ray illumination source configured to provide an amount of x-ray illumination light directed to one or more structures disposed on a semiconductor wafer within a measurement area;
a detector configured to detect an amount of x-ray light reflected from or transmitted through the semiconductor wafer in response to the amount of x-ray illumination light and generate a plurality of output signals indicative of a measured scattering response from the one or more structures; and
a non-transitory, computer readable medium comprising instructions that when executed by one or more processors cause the one or more processors to:
decompose the one or more structures into a plurality of sub-structures, the measurement area into a plurality of sub-areas, or both;
generate a structural model associated with each of the plurality of sub-structures, each of the plurality of sub-areas, or both;
generate a simulated scattering response associated with each of the structural models, independently;
combine each of the simulated scattering responses to generate a combined, simulated scattering response; and
determine values of one or more parameters of interest associated with the one or more structures based on the combined, simulated scattering response and the measured scattering response.
19. A method comprising:
providing an amount of x-ray illumination light directed to one or more structures disposed on a semiconductor wafer within a measurement area;
detecting an amount of x-ray light reflected from or transmitted through the semiconductor wafer in response to the amount of x-ray illumination light;
generating a plurality of output signals indicative of a measured scattering response from the one or more structures;
decomposing the one or more structures into a plurality of sub-structures, the measurement area into a plurality of sub-areas, or both;
generating a structural model associated with each of the plurality of sub-structures, each of the plurality of sub-areas, or both;
generating a simulated scattering response associated with each of the structural models, independently;
combining each of the simulated scattering responses to generate a combined, simulated scattering response; and
determining values of one or more parameters of interest associated with the one or more structures based on the combined, simulated scattering response and the measured scattering response.
20. The method of claim 19 , further comprising:
communicating an indication of the values of the one or more parameters of interest to a fabrication tool that causes the fabrication tool to adjust a value of one or more process control parameters of the fabrication tool.