Magnetoresistance effect device
The magnetoresistance effect device includes: a magnetoresistance effect element that includes a first magnetization free layer, a magnetization fixed layer or a second magnetization free layer, and a spacer layer interposed between the first magnetization free layer and the magnetization fixed layer or the second magnetization free layer; and a magnetic material part that applies a magnetic field to the magnetoresistance effect element, wherein the magnetic material part is arranged to surround an outer circumference of the magnetoresistance effect element in a plan view in a stacking direction L of the magnetoresistance effect element.
1. A magnetoresistance effect device comprising:
a magnetoresistance effect element that includes:
a first magnetization free layer,
a magnetization fixed layer or a second magnetization free layer, and
a spacer layer interposed between the first magnetization free layer and the magnetization fixed layer or the second magnetization free layer; and
a magnetic material part configured to apply a magnetic field to the magnetoresistance effect element,
wherein:
the magnetic material part is arranged to surround an outer circumference of the magnetoresistance effect element in a plan view in a stacking direction of the magnetoresistance effect element, and
the magnetic material part contains a hard magnetic material.
2. The magnetoresistance effect device according to claim 1 , wherein the magnetic material part is arranged to surround an entire outer circumference of the magnetoresistance effect element in the plan view in the stacking direction.
3. The magnetoresistance effect device according to claim 2 , wherein the magnetic material part is arranged to surround at least an outer circumference of the first magnetization free layer.
4. The magnetoresistance effect device according to claim 1 , wherein a gap is formed in the magnetic material part in such a way that a part of the outer circumference of the magnetoresistance effect element is free of the magnetic material part surrounding the magnetoresistance effect element in the plan view in the stacking direction,
wherein a width of the gap in the plan view is smaller than a width of the magnetoresistance effect element in a direction parallel to a width direction of the gap.
5. The magnetoresistance effect device according to claim 4 , wherein the magnetic material part is arranged to surround at least an outer circumference of the first magnetization free layer.
6. The magnetoresistance effect device according to claim 1 , wherein the magnetic material part is arranged to surround at least an outer circumference of the first magnetization free layer.
7. The magnetoresistance effect device according to claim 1 , further comprising a magnetic field application mechanism configured to apply a magnetic field having a component in the stacking direction to the magnetoresistance effect element.