Method of forming a memory device
A method for forming a memory device is disclosed, including providing a substrate, forming an isolation structure and plural active regions in the substrate, forming a plurality of island features on the substrate respectively covering two of the terminal portions of the active regions, using the island features as an etching mask to etch the substrate to perform a first etching process to define a first recessed region and plural island structures on the substrate. The island structures respectively comprise the two terminal portions of the active regions and the first recessed region comprises the central portions of the active regions.
1. A memory device, comprising:
a substrate, comprising an isolation structure and a plurality of active regions defined by the isolation structure;
a plurality of word lines formed in the substrate, wherein each of the active regions is divided into two terminal portions and a central portion between the terminal portions by two of the word lines;
a plurality of island structures respectively comprising two of the terminal portions respectively belonging to two of the active regions; and
a first recessed region surrounding the island structures and comprising the central portions of the active regions;
a plurality of bit lines formed on the substrate, traversing through the first recessed regions and pass between the plurality of island structures, wherein the bit lines overlap the central portions of the active regions, and the island structures are exposed between the bit lines;
a spacer structure on sidewalls of each of the bit lines;
an interlayer dielectric layer on the substrate and between the bit lines;
a plurality of openings in the interlayer dielectric layer; and
a plurality of storage node contacts respectively in one of the openings to electrically connect to one of the terminal portions, wherein the storage node contacts are electrically isolated from the bit lines by the spacer structure.
2. The memory device according to claim 1 , wherein the island structures are disposed between the word lines.
3. The memory device according to claim 2 , wherein the bit lines stride across central portions of the island structures.
4. The memory device according to claim 1 , wherein the island structures overlap on the word lines.
5. The memory device according to claim 4 , wherein the bit lines overlap the first recessed region between the island structures.
6. The memory device according to claim 1 , wherein each of the island structures further comprises a portion of the isolation structure.
7. The memory device according to claim 1 , wherein the first recessed region further comprises a portion of isolation structure outside the island structures.