Ceramic membrane for water treatment using oxidation-treated SiC and method for manufacturing the same
Disclosed are a ceramic membrane for water treatment using oxidation-treated SiC and a method for manufacturing the same. An object of the present invention is to manufacture a ceramic membrane for water treatment, which can be sintered at a low temperature of 1,050° C. or less, in which a SiO 2 oxide layer formed during an oxidation process induces volume expansion so as to prevent defects due to the contraction of a coating layer during general sintering. The ceramic membrane for water treatment using the oxidation treated SiC includes a porous ceramic support layer; and a SiC layer formed on the porous ceramic support layer and including SiC particles on which a SiO 2 oxide layer formed on a surface thereof.
1. A ceramic membrane for water treatment, comprising:
a porous ceramic support layer; and
a SiC layer formed on the porous ceramic support layer,
wherein the SiC layer comprises SiC particles and a SiO 2 oxide layer formed on a surface of the SiC particles,
wherein the SiC particles have a SiC oxidation percentage in a range of 12% to 15%, and
wherein the SiO 2 oxide layer has a thickness in a range of 0.028 μm to 0.035 μm.
2. The ceramic membrane according to claim 1 , wherein the SiC particles have an average particle diameter of 1 μm or less.
3. The ceramic membrane according to claim 1 , wherein the SiC layer contains pores having an average diameter in a range of 0.05 μm to 0.5 μm.
4. The ceramic membrane according to claim 1 , wherein the SiC layer is in a form of a film having a thickness in a range of 10 μm to 25 μm.
5. A method of manufacturing a ceramic membrane for water treatment, comprising:
(a) coating a porous ceramic support layer with a slurry comprising SiC powder; and
(b) sintering the coated result at a temperature of 950° C. to 1,050° C.,
wherein a SiO 2 oxide layer is formed on a surface of SiC particles by the sintering,
wherein the SiC particles have a SiC oxidation percentage in a range of 12% to 15%,
wherein the SiO 2 oxide layer has a thickness in a range of 0.028 μm to 0.035 μm; and
wherein the sintering is carried out for 2.5 hours to 3.5 hours.
6. The method according to claim 5 , wherein the SiC particles have an average particle diameter of 1 μm or less.
7. The method according to claim 5 , wherein, in step (b), a SiC layer contains pores having an average pore size in a range of 0.05 μm to 0.5 μm.
8. The method according to claim 5 , wherein, in step (b), a SiC layer has a thickness in a range of 10 μm to 25 μm.