Method for manufacturing semiconductor device
Disclosed is a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device includes forming a p-channel over a semiconductor substrate. A gate dielectric layer is formed over the p-channel. The gate dielectric layer is doped with a dopant. A first metal gate is formed over the gate dielectric layer.
1. A method, comprising:
forming a p-channel over a semiconductor substrate;
forming a gate dielectric layer over the p-channel;
doping the gate dielectric layer over the p-channel with a dopant to form an oxide cap layer in contact with a top surface of the gate dielectric layer; and
forming a first metal gate electrode over and in contact with the oxide cap layer.
2. The method of claim 1 , wherein the dopant comprises lanthanum, yttrium, strontium, or combinations thereof.
3. The method of claim 1 , wherein the oxide cap layer comprises a rare earth compound, strontium, or combinations thereof.
4. The method of claim 1 , further comprising:
forming an n-channel over the semiconductor substrate,
wherein forming the gate dielectric layer is performed such that a portion of the gate dielectric layer is formed over the n-channel, and
wherein doping the gate dielectric layer is performed such that said portion of the gate dielectric layer over the n-channel is doped with the dopant.
5. The method of claim 4 , further comprising:
forming a second metal gate electrode over said portion of the gate dielectric layer over the n-channel, wherein the first metal gate electrode and the second metal gate electrode are made of the same material.
6. The method of claim 1 , wherein forming the gate dielectric layer is performed such that the gate dielectric layer is formed around the p-channel.
7. The method of claim 1 , wherein the first metal gate electrode comprises:
a p-work function metal layer in contact with the oxide cap layer; and
a first metal gate over the p-work function metal layer.
8. The method of claim 1 , wherein doping the gate dielectric layer is such that a dopant concentration of the oxide cap layer is higher than a dopant concentration of the gate dielectric layer.
9. A method, comprising:
forming an n-channel over a semiconductor substrate;
forming a gate dielectric layer over the n-channel;
doping the gate dielectric layer over the n-channel with a dopant to form an oxide cap layer in contact with a top surface of the gate dielectric layer;
forming a p-work function metal layer over the gate dielectric layer; and
forming a metal gate over and in contact with the p-work function metal layer.
10. The method of claim 9 , wherein the p-work function metal layer is formed such that the p-work function metal layer is in contact with the oxide cap layer.
11. A method, comprising:
forming an n-channel and a p-channel over a semiconductor substrate, wherein the n-channel and the p-channel are made of different materials;
forming an isolation structure between the n-channel and the p-channel;
forming a gate dielectric layer over the isolation structure, the n-channel, and the p-channel;
depositing a p-work function metal layer over the gate dielectric layer;
depositing a metal gate layer over the p-work function metal layer; and
removing portions of the metal gate layer, the p-work function metal layer, and the gate dielectric layer over the isolation structure to expose a top surface of the isolation structure, such that the gate dielectric layer is separated into a first gate dielectric layer over the n-channel and a second gate dielectric layer over the p-channel, the p-work function metal layer is separated into a first p-work function metal layer over the first gate dielectric layer and a second p-work function metal layer over the second gate dielectric layer, and the metal gate layer is separated into a first metal gate over the first p-work function metal layer and a second metal gate over the second p-work function metal layer.
12. The method of claim 11 , further comprising:
doping the gate dielectric layer with a dopant.
13. The method of claim 12 , wherein the dopant comprises lanthanum, yttrium, strontium, or combinations thereof.
14. The method of claim 12 , wherein doping the gate dielectric layer is performed such that a cap layer is formed in the gate dielectric layer.
15. The method of claim 14 , wherein the cap layer comprises a rare earth compound, strontium, or combinations thereof.
16. The method of claim 14 , wherein removing the portions of the metal gate layer, the p-work function metal layer, and the gate dielectric layer comprises removing a portion of the cap layer, such that the cap layer is separated into a first cap layer in the first gate dielectric layer and a second cap layer in the second gate dielectric layer.
17. The method of claim 11 , wherein the p-channel comprises germanium.
18. The method of claim 11 , wherein the gate dielectric layer comprises a high-k dielectric material.
19. The method of claim 11 , wherein forming the gate dielectric layer is performed such that the gate dielectric layer is formed over sidewalls and a top surface of the n-channel.
20. The method of claim 11 , wherein forming the gate dielectric layer is performed such that the gate dielectric layer is formed over sidewalls and a top surface of the p-channel.