Photoelectric conversion apparatus and equipment

1. A photoelectric conversion apparatus comprising:

a semiconductor layer including a plurality of photoelectric conversion portions and a main face forming respective light receiving faces of the plurality of photoelectric conversion portions,

wherein the plurality of photoelectric conversion portions includes a first photoelectric conversion portion, a second photoelectric conversion portion and a third photoelectric conversion portion,

wherein the semiconductor layer has a first trench positioned between the first photoelectric conversion portion and the second photoelectric conversion portion, a second trench positioned between the second photoelectric conversion portion and the third photoelectric conversion portion,

wherein the first trench and the second trench each continuously extend on the main face,

wherein a silicon compound film that is any one of a silicon oxide film, a silicon nitride film, and a silicon carbide film and a metal compound film lying between the silicon compound film and the semiconductor layer are provided above the main face,

wherein the silicon compound film and the metal compound film extend into the first trench,

wherein the metal compound film extends into the second trench, and

wherein the following conditions are satisfied:

Hd<Hb; and

Wa−2×Hd>Wb,

where a distance from a bottom of the second trench to the silicon compound film is expressed as Hb, a distance from the main face to the silicon compound film is expressed as Hd, a width of the first trench is expressed as Wa, and a width of the second trench is expressed as Wb.

2. The photoelectric conversion apparatus according to claim 1 , wherein the following conditions are satisfied:

Da>Wa; and

Db>Wb,

where a depth of the first trench is expressed as Da, and a depth of the second trench is expressed as Db.

3. The photoelectric conversion apparatus according to claim 2 , wherein the following condition is satisfied:

Da−Db>Hd.

4. The photoelectric conversion apparatus according to claim 2 , wherein the following condition is satisfied:

Db<Hb.

5. The photoelectric conversion apparatus according to claim 2 ,

wherein the plurality of photoelectric conversion portions includes a fourth photoelectric conversion portion, the semiconductor layer has a third trench positioned between the third photoelectric conversion portion and the fourth photoelectric conversion portion, and

wherein the following condition is satisfied:

Db<Pa+Pb,

where a distance between the first trench and the second trench is expressed as Pa, and a distance between the second trench and the third trench is expressed as Pb.

6. The photoelectric conversion apparatus according to claim 2 , wherein the following condition is satisfied:

Db<Da.

7. The photoelectric conversion apparatus according to claim wherein the following condition is satisfied:

Da/Wa<Db/Wb.

8. The photoelectric conversion apparatus according to claim 1 , wherein the following condition is satisfied:

Wa>2×Wb″.

9. The photoelectric conversion apparatus according to claim 1 , wherein the following conditions are satisfied:

Tm<Wa; and

Ts<Wa,

where a thickness of the metal compound film above the main face is expressed as Tm and a thickness of the silicon compound film above the main face is expressed as Ts.

10. The photoelectric conversion apparatus according to claim 9 , wherein the following condition is satisfied:

Tm<Ts.

11. The photoelectric conversion apparatus according to claim 9 , wherein the following condition is satisfied:

Wb≤2×Tm<Wa.

12. The photoelectric conversion apparatus according to claim 9 , wherein the following condition is satisfied:

2>Tm<Wa−Wb.

13. The photoelectric conversion apparatus according to claim 9 , wherein the following condition is satisfied:

2×Tm+2×Ts<Wa.

14. The photoelectric conversion apparatus according to claim 1 ,

wherein the silicon compound film includes a silicon oxide film, and

wherein the metal compound film includes a multi-layered film including a first metal oxide layer and a second metal oxide layer lying between the first metal oxide layer and the semiconductor layer.

15. The photoelectric conversion apparatus according to claim 14 , wherein the first metal oxide layer is a tantalum oxide layer, a titanium oxide layer, or a zirconium oxide layer.

16. The photoelectric conversion apparatus according to claim 14 , wherein the second metal oxide layer is an aluminum oxide layer or a hafnium oxide layer.

17. The photoelectric conversion apparatus according to claim 14 , wherein a thickness of the second metal oxide layer is smaller than a thickness of the first metal oxide layer.

18. The photoelectric conversion apparatus according to claim 1 ,

wherein a lens array including a plurality of lenses is arranged over the main face, and

wherein one lens from among the plurality of lenses is arranged over the second photoelectric conversion portion and the third photoelectric conversion portion.

19. The photoelectric conversion apparatus according to claim 18 , wherein another lens array including a plurality of lenses is arranged between the lens array and the semiconductor layer.

20. Equipment including the photoelectric conversion apparatus according to claim 1 , further comprising at least any one of:

an optical apparatus associated with the photoelectric conversion apparatus;

a control apparatus configured to control the photoelectric conversion apparatus;

a processing apparatus configured to process a signal output from the photoelectric conversion apparatus;

a display apparatus configured to display information acquired by the photoelectric conversion apparatus;

a storage apparatus configured to store information acquired by the photoelectric conversion apparatus; and

a mechanical apparatus configured to move the photoelectric conversion apparatus based on information acquired by the photoelectric conversion apparatus.