Replacement sacrificial nanosheets having improved etch selectivity
Embodiments of the invention are directed to a method of forming a nanosheet transistor. A non-limiting example of the method includes forming a nanosheet stack having alternating layers of channel nanosheets and sacrificial nanosheets, wherein each of the layers of channel nanosheets includes a first type of semiconductor material, and wherein each of the layers of sacrificial nanosheets includes a second type of semiconductor material. The layers of sacrificial nanosheets are removed from the nanosheet stack, and layers of replacement sacrificial nanosheets are formed in the spaces that were occupied by the sacrificial nanosheets. Each of the layers of replacement sacrificial nanosheets includes a first type of non-semiconductor material.
1. A method of forming a nanosheet transistor, the method comprising:
forming a nanosheet stack comprising alternating layers of channel nanosheets and sacrificial nanosheets;
wherein each of the layers of channel nanosheets comprises a first type of semiconductor material;
wherein each of the layers of sacrificial nanosheets comprises a second type of semiconductor material;
removing the layers of sacrificial nanosheets from the nanosheet stack;
forming layers of replacement sacrificial nanosheets in spaces that were occupied by the sacrificial nanosheets;
wherein each of the layers of replacement sacrificial nanosheets comprises a first type of non-semiconductor material; and
removing the layers of replacement sacrificial nano sheets.
2. The method of claim 1 , wherein:
the first type of semiconductor material has a first etch rate in response to an etch medium; and
the second type of semiconductor material has a second etch rate in response to the etch medium.
3. The method of claim 2 , wherein the first type of non-semiconductor material has a third etch rate in response to the etch medium.
4. The method of claim 3 , wherein the third etch rate is greater than the second etch rate.
5. The method of claim 4 , wherein the third etch rate is greater than the first etch rate.
6. The method of claim 1 , wherein the first type of non-semiconductor material comprises a dielectric.
7. The method of claim 6 , wherein the dielectric is selected from a group consisting of an oxide and a nitride.
8. The method of claim 1 , wherein the first type of non-semiconductor material comprises a metal.
9. A method of forming a nanosheet transistor, the method comprising:
forming a nanosheet stack comprising alternating layers of channel nanosheets and sacrificial nanosheets;
wherein each of the layers of channel nanosheets comprises a first type of semiconductor material;
wherein each of the layers of sacrificial nanosheets comprises a second type of semiconductor material;
removing the layers of sacrificial nanosheets from the nanosheet stack;
forming layers of replacement sacrificial nanosheets in spaces that were occupied by the sacrificial nanosheets;
wherein each of the layers of replacement sacrificial nanosheets comprises a first type of non-semiconductor material;
forming source or drain (S/D) regions communicatively coupled at ends of the layers of channel nanosheets; and
applying an etch medium configured to remove the layers of replacement nanosheets from the nanosheet stack;
wherein the S/D regions comprise the first type of semiconductor material or the second type of semiconductor material;
wherein the first type of semiconductor material has a first etch rate in response to the etch medium;
wherein the second type of semiconductor material has a second etch rate in response to the etch medium;
wherein the first type of non-semiconductor material has a third etch rate in response to the etch medium;
wherein the third etch rate is greater than the second etch rate; and
wherein the third etch rate is greater than the first etch rate.
10. The method of claim 9 further comprising:
prior to removing the layers of sacrificial nanosheets from the nanosheet stack, forming sidewall gate spacers over and around the nanosheet stack; and
subsequent to forming the layers of replacement sacrificial nanosheets in spaces that were occupied by the sacrificial nanosheets, forming inner spacers adjacent to ends of each of the layers of replacement sacrificial nanosheets;
wherein each of the gate sidewalls comprises a second type of non-semiconductor material;
wherein each of the inner spacers comprises a third type of non-semiconductor material;
wherein the second type of non-semiconductor material has a fourth etch rate in response to the etch medium;
wherein the third type of non-semiconductor material has a fifth etch rate in response to the etch medium;
wherein the third etch rate is greater than the fourth etch rate; and
wherein the third etch rate is greater than the fifth etch rate.
11. The method of claim 10 , wherein:
the first type of semiconductor material is selected from a group consisting of Si and SiGe;
the second type of semiconductor material is selected from the group consisting of Si and SiGe;
the first type of non-semiconductor material is selected from a group consisting of an oxide, a nitride, and a metal;
the second type of non-semiconductor material is selected from a group consisting of an oxide and a nitride; and
the third of non-semiconductor material is selected from the group consisting of an oxide and a nitride.
12. A method of forming a nanosheet transistor, the method comprising:
forming a nanosheet stack comprising alternating layers of channel nanosheets and sacrificial nanosheets;
wherein each of the layers of channel nanosheets comprises a first type of semiconductor material;
wherein each of the layers of sacrificial nanosheets comprises a second type of semiconductor material;
forming gate sidewall spacers over and around the nanosheet stack;
removing the layers of sacrificial nanosheets from the nanosheet stack;
forming layers of replacement sacrificial nanosheets in spaces that were occupied by the sacrificial nanosheets; and
forming inner spacers adjacent to ends of each of the layers of replacement sacrificial nanosheets;
wherein each of the layers of replacement sacrificial nanosheets comprises a first type of non-semiconductor material;
wherein each of the gate sidewalls comprises a second type of non-semiconductor material;
wherein each of the inner spacers comprises a third type of non-semiconductor material; and
replacing the layers of replacement sacrificial nanosheets with conductive gate regions.
13. The method of claim 12 , wherein:
the first type of semiconductor material has a first etch rate in response to an etch medium; and
the second type of semiconductor material has a second etch rate in response to the etch medium.
14. The method of claim 13 , wherein the first type of non-semiconductor material has a third etch rate in response to the etch medium.
15. The method of claim 14 , wherein the third etch rate is greater than the second etch rate.
16. The method of claim 15 , wherein the third etch rate is greater than the first etch rate.
17. The method of claim 16 , wherein:
the second type of non-semiconductor material has a fourth etch rate in response to the etch medium; and
the third etch rate is greater than the fourth etch rate.
18. The method of claim 17 , wherein:
the third type of non-semiconductor material has a fifth etch rate in response to the etch medium; and
the third etch rate is greater than the fifth etch rate.
19. The method of claim 13 , wherein:
the first type of non-semiconductor material comprises a first type of dielectric;
the second type of non-semiconductor material comprises a second type of dielectric; and
the third type of non-semiconductor material comprises a third type of dielectric.
20. The method of claim 19 , wherein:
the first type of dielectric is selected from a group consisting of an oxide, a nitride, and a metal;
the second type of dielectric is selected from a group consisting of an oxide and a nitride;
the third type of dielectric is selected from the group consisting of an oxide and a nitride.