Semiconductor device including non-active fins and separation regions

1. A semiconductor device comprising:

a substrate having a plurality of fins protruding therefrom, the plurality of fins comprising a plurality of active fins and at least one non-active fin disposed between ones of the plurality of active fins;

at least one gate electrode crossing at least a portion of the active fins;

a plurality of source/drain regions disposed on the active fins adjacent the at least one gate electrode and separated from one another by the at least one non-active fin; and

a gate separating pattern interposed between first and second gate electrodes of the at least one gate electrode,

wherein a lowermost surface of the gate separating pattern directly contacts a source/drain region of the plurality of source/drain regions.

2. The semiconductor device of claim 1 , wherein the plurality of fins have a substantially uniform same pitch.

3. The semiconductor device of claim 1 , wherein intervals between adjacent ones of the plurality of fins are substantially the same.

4. The semiconductor device of claim 1 , wherein an uppermost end of the non-active fin is disposed at a level higher than that of a lowermost end of the plurality of source/drain regions.

5. The semiconductor device of claim 1 , wherein an uppermost end of the at least one non-active fin is disposed on a level lower than uppermost ends of the plurality of active fins.

6. The semiconductor device of claim 1 , wherein an uppermost end of the at least one non-active fin is disposed on a level higher than that of lowermost end of the at least one gate electrode.

7. The semiconductor device of claim 1 , wherein side surfaces of the plurality of source/drain regions are in contact with side surfaces of the at least one non-active fin.

8. The semiconductor device of claim 1 , further comprising a device separating layer between the ones of the plurality of fins and comprising a different material than the at least one non-active fin.

9. The semiconductor device of claim 8 , wherein an upper end of the at least one non-active fin is disposed at a level higher than that of an upper end of the device separating layer.

10. The semiconductor device of claim 1 , wherein the first and second gate electrodes are co-linear.

11. The semiconductor device of claim 10 , wherein the gate separating pattern is in contact with upper and side surfaces of the non-active fin.

12. The semiconductor device of claim 10 , wherein a lower end of the gate separating pattern is disposed at a level lower than an upper end of the non-active fin.

13. The semiconductor device of claim 10 :

wherein the first and second gate electrodes partially extend to a lower portion of the gate separating pattern; and

wherein a lower surface of the gate separating pattern is in contact with the first and second gate electrodes.

14. The semiconductor device of claim 1 , wherein the at least one non-active fin includes a different material than a material of the plurality of active fins, and

wherein the at least one non-active fin includes an insulating layer including silicon nitride, silicon oxide, SiC, SiOC, polysilicon, or a combination thereof.

15. A semiconductor device comprising:

a substrate having a plurality of fins protruding therefrom, the plurality of fins comprising a plurality of active fins and at least one non-active fin disposed between ones of the plurality of active fins;

at least one gate electrode crossing at least a portion of the active fins;

a plurality of source/drain regions disposed on the active fins adjacent the at least one gate electrode and separated from one another by the at least one non-active fin; and

a device separating layer between the ones of the plurality of fins and comprising a different material than the at least one non-active fin,

wherein a lower end of the at least one non-active fin is disposed at a level lower than that of a lower end of the device separating layer.

16. A semiconductor device comprising:

a substrate having a P-well and an N-well therein;

a P-type active fin disposed in the P-well;

an N-type active fin disposed in the N-well;

a first gate electrode crossing the N-type active fin;

a second gate electrode crossing the P-type active fin;

a first source/drain region disposed on the N-type active fin;

a second source/drain region disposed on the P-type active fin;

at least one non-active fin disposed between the P-type active fin and the N-type active fin and between the first source/drain region and the second source/drain region; and

a gate separating pattern interposed between the first and second gate electrodes,

wherein a lowermost surface of the gate separating pattern directly contacts at least one of the first source/drain region and the second source/drain region.

17. The semiconductor device of claim 16 , wherein the at least one non-active fin is adjacent an interface between the P-well and the N-well.

18. The semiconductor device of claim 16 , wherein the at least one non-active fin comprises first and second non-active fins in the P-well and the N-well, respectively.

19. The semiconductor device of claim 18 , wherein an upper surface of the second non-active fin is disposed at a level lower than that of an upper surface of the first non-active fin.

20. A semiconductor device comprising:

a first active fin disposed in a substrate;

a second active fin disposed in the substrate and spaced apart from the first active fin;

a non-active fin disposed between the first active fin and the second active fin;

a first gate electrode crossing the first active fin;

a second gate electrode crossing the second active fin;

a first source/drain region disposed on the first active fin;

a second source/drain region disposed on the second active fin; and

a gate separating pattern disposed on the non-active fin between the first gate electrode and the second gate electrode,

wherein a lowermost surface of the gate separating pattern directly contacts at least one of the first source/drain region and the second source/drain region.