Secondary battery
A secondary battery according to the present invention includes a first electrode, a second electrode, a charging layer arranged between the first electrode ( 11 ) and the second electrode and containing a mixture of an insulating material and a first n-type oxide semiconductor material, an n-type oxide semiconductor layer arranged between the charging layer and the first electrode and containing a second n-type oxide semiconductor material, a p-type oxide semiconductor layer ( 16 ) arranged between the charging layer and the second electrode and containing a p-type oxide semiconductor material, a mixture layer arranged between the charging layer and the p-type oxide semiconductor layer and containing a mixture of silicon oxide and a third n-type oxide semiconductor material, and a conductive layer arranged between the first electrode and the n-type oxide semiconductor layer and containing a metal material.
1. A secondary battery comprising:
a first electrode;
a second electrode;
a charging layer arranged between the first electrode and the second electrode and containing a mixture of an insulating material and a first n-type oxide semiconductor material;
an n-type oxide semiconductor layer arranged between the charging layer and the first electrode and containing a second n-type oxide semiconductor material;
a p-type oxide semiconductor layer arranged between the charging layer and the second electrode and containing a p-type oxide semiconductor material;
a mixture layer arranged between the charging layer and the p-type oxide semiconductor layer and containing a mixture of silicon oxide and a third n-type oxide semiconductor material; and a conductive layer arranged between the first electrode and the n-type oxide semiconductor layer and containing a metal material.
2. The secondary battery according to claim 1 , wherein the third n-type oxide semiconductor material is tin oxide.
3. The secondary battery according to claim 1 , wherein the conductive layer contains the same metallic element as a metallic element contained in the second n-type oxide semiconductor material.
4. The secondary battery according to claim 1 , wherein the conductive layer contains a metallic element having a higher electric conductivity than an electric conductivity of a metallic element contained in the second n-type oxide semiconductor material.
5. The secondary battery according to claim 1 , wherein the second n-type oxide semiconductor material is titanium oxide.
6. The secondary battery according to claim 5 , wherein the conductive layer includes a titanium film provided to be in contact with the n-type oxide semiconductor layer.
7. The secondary battery according to claim 6 , wherein
the conductive layer has a laminated structure including a tungsten film and the titanium film, and the tungsten film is provided to be in contact with the first electrode.
8. The secondary battery according to claim 1 , wherein
the conductive layer comprises:
a first metal film being in contact with the n-type oxide semiconductor layer; and
a second metal film being in contact with the first electrode, wherein the first metal film contains the same metallic element as a metallic element contained in the second n-type oxide semiconductor material.
9. The secondary battery according to claim 8 , wherein the second metal film contains a metallic element having a higher electric conductivity than an electric conductivity of the metallic element contained in the second n-type oxide semiconductor material.
10. The secondary battery according to claim 1 , wherein the mixture layer has a thickness of 100 nm to 250 nm.