Imprint recovery for memory cells
Methods, systems, and devices for imprint recovery for memory cells are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.
1. A method, comprising:
determining to perform an imprint recovery procedure on a memory cell configured to store one of a set of logic states based at least in part on detecting, for a set of memory cells comprising the memory cell, a quantity of mismatched logic states that satisfies a threshold quantity of mismatched logic states, wherein the imprint recovery procedure is to increase an ability of the memory cell to switch between storing a first logic state of the set of logic states and storing a second logic state of the set of logic states; and
applying to the memory cell, based at least in part on determining to perform the imprint recovery procedure, a set of one or more voltage pulses each having a polarity associated with the second logic state.
2. The method of claim 1 , further comprising:
applying to the memory cell a second set of one or more voltage pulses each having a second polarity associated with the first logic state.
3. The method of claim 2 , wherein:
the set of one or more voltage pulses each have a first duration; and
the second set of one or more voltage pulses each have a second duration that is shorter than the first duration.
4. The method of claim 2 , wherein:
the set of one or more voltage pulses each have a first amplitude; and
the second set of one or more voltage pulses each have a second amplitude that is smaller than the first amplitude.
5. The method of claim 1 , further comprising:
determining, after applying the set of one or more voltage pulses, to write the second logic state to the memory cell; and
applying a write voltage for the second logic state to the memory cell based at least in part on determining to write the second logic state, wherein the write voltage has a smaller amplitude than each of the set of one or more voltage pulses.
6. The method of claim 1 , further comprising:
identifying the set of memory cells on which to perform the imprint recovery procedure; and
determining a duration, an amplitude, or a quantity of voltage pulses in the set of one or more voltage pulses based at least in part on a quantity of memory cells included in the set of memory cells, wherein the applying is based at least in part on determining the duration, the amplitude, or the quantity of voltage pulses.
7. The method of claim 1 , further comprising:
identifying a severity with which the memory cell is imprinted in the first logic state or the second logic state; and
determining a duration, an amplitude, or a quantity of voltage pulses in the set of one or more voltage pulses based at least in part on the severity with which the memory cell is imprinted, wherein the applying is based at least in part on determining the duration, the amplitude, or the quantity of voltage pulses.
8. The method of claim 1 , further comprising:
identifying an age of a memory device that includes the memory cell; and
determining a duration, an amplitude, or a quantity of voltage pulses in the set of one or more voltage pulses based at least in part on the age of the memory device, wherein the applying is based at least in part on determining the duration, the amplitude, or the quantity of voltage pulses.
9. The method of claim 1 , further comprising:
identifying a temperature of a memory device that includes the memory cell; and
determining a duration, an amplitude, or a quantity of voltage pulses in the set of one or more voltage pulses based at least in part on the temperature of the memory device, wherein the applying is based at least in part on determining the duration, the amplitude, or the quantity of voltage pulses.
10. The method of claim 1 , further comprising:
identifying a duration of a time window for performing the imprint recovery procedure; and
determining a duration, an amplitude, or a quantity of voltage pulses in the set of one or more voltage pulses based at least in part on the duration of the time window for performing the imprint recovery procedure, wherein the applying is based at least in part on determining the duration, the amplitude, or the quantity of voltage pulses.
11. The method of claim 1 , further comprising:
identifying an amount of power available for performing the imprint recovery procedure; and
determining a duration, an amplitude, or a quantity of voltage pulses in the set of one or more voltage pulses based at least in part on the amount of power available for performing the imprint recovery procedure, wherein the applying is based at least in part on determining the duration, the amplitude, or the quantity of voltage pulses.
12. The method of claim 1 , further comprising:
determining to perform an access procedure on the memory cell, the access procedure comprising a read portion and a write portion, wherein the set of one or more voltage pulses are applied to the memory cell at a time between the read portion and the write portion.
13. The method of claim 1 , wherein:
the memory cell comprises a ferroelectric memory cell; and
the imprint recovery procedure is to increase the ability of the memory cell to switch between storing the first logic state and storing the second logic state based at least in part on altering a configuration of electrostatic domains within the ferroelectric memory cell.
14. An apparatus, comprising:
a memory cell configured to store one of a set of logic states; and
a controller configured to cause the apparatus to:
determine to perform an imprint recovery procedure on the memory cell based at least in part on detecting, for a set of memory cells comprising the memory cell, a quantity of mismatched logic states that satisfies a threshold quantity of mismatched logic states, wherein the imprint recovery procedure is to increase an ability of the memory cell to switch between storing a first logic state of the set of logic states and storing a second logic state of the set of logic states; and
apply to the memory cell, based at least in part on determining to perform the imprint recovery procedure, a set of one or more voltage pulses each having a polarity associated with the second logic state.