Memory system for activating redundancy memory cell and operating method thereof

1. A data processing system comprising:

a plurality of memory devices including first and second memory devices, the first memory device having a memory cell array and a device controller, the memory cell array including a normal memory cell area and a redundancy memory cell area, the redundancy memory cell area including a replacement memory cell region and a reserved memory cell region, the replacement memory cell region including a plurality of replacement memory cells replaced with a plurality of failed memory cells included in the normal memory cell area, the reserved memory cell region including a plurality of reserved memory cells in a remaining region other than the replacement memory cell region;

a host configured to transmit a request for write and read operations to the first memory device and the second memory device; and

a memory controller configured to assign a first address to the plurality of reserved memory cells in the reserved memory cell region to enable accessing of the plurality of reserved memory cells, wherein the first address is not assigned to access the normal memory cell area and the replacement memory cell region.

2. The data processing system of claim 1 , wherein the device controller is configured to generate a first signal associated with the redundancy memory cell area, the first signal indicating existence of the redundancy memory cell area, and the memory controller is configured to access the redundancy memory cell area based on the first signal.

3. The data processing system of claim 2 , wherein the first memory device further comprises a fuse unit configured to activate the redundancy memory cell area based on the first address.

4. The data processing system of claim 3 , wherein the first signal is provided to the fuse unit together with a Mode Register Set (MRS) signal.

5. The data processing system of claim 4 , wherein the fuse unit activates the redundancy memory cell based on the first signal, the MRS signal, and the first address.

6. The data processing system of claim 1 , wherein the first memory device further comprises a memory cell array power management unit that separately manages power of the redundancy memory cell area from power of the normal memory cell area.

7. The data processing system of claim 6 , wherein the memory cell array power management unit turns off the power of the redundancy memory cell area unless a request uses the redundancy memory cell area.

8. The data processing system of claim 1 ,

wherein the device controller generates a second signal associated with the reserved memory cell region, and the memory controller assigns a second address for accessing a reserved memory cell of the reserved memory cell region based on the second signal, and

wherein a replacement memory cell in the replacement memory cell region replaces a failed memory cell in the normal memory cell area, and the reserved memory cell in the reserved memory cell region remains without replacing any failed memory cell in the normal memory cell area.

9. The data processing system of claim 8 , wherein the memory controller monitors a number of access requests activating each of a plurality of word lines in the first memory device.

10. The data processing system of claim 9 , wherein the memory controller controls the first memory device to copy data stored in memory cells coupled to a first word line, for which the number of access requests is greater than a threshold value, into memory cells coupled to a second word line of the reserved memory cell region, and

wherein the memory controller assigns an address for activating the first word line to the second word line.

11. The data processing system of claim 8 , wherein the first memory device further includes a memory cell array power management unit that separately manages power of the reserved memory cell region from power of the normal memory cell area, and

the memory cell array power management unit turns off the power of the reserved memory cell region unless a request uses the reserved memory cell region, and

wherein, when a capacity of a memory assigned for processing a request is insufficient, the memory controller assigns the reserved memory cell to process the request.

12. The data processing system of claim 1 , wherein the second memory device has a memory cell array and a device controller, the second memory cell array including a normal memory cell area and a redundancy memory cell area, the second device controller being configured to generate a third signal associated with the redundancy memory cell area of the second memory cell array, and

wherein the memory controller is provided external to the second memory device and configured to enable accessing of a redundancy memory cell of the redundancy memory cell area of the second memory device based on the third signal.

13. A method for operating a data processing system, the method comprising:

assigning, by a memory controller, a first address to a first memory device, wherein the first memory device includes a normal memory cell area and a redundancy memory cell area, the redundancy memory cell area including a replacement memory cell region and a reserved memory cell region, the replacement memory cell region including a plurality of replacement memory cells replaced with a plurality of failed memory cells included in the normal memory cell area, the reserved memory cell region including a plurality of reserved memory cells in a remaining region other than the replacement memory cell region, and wherein the first address for accessing the plurality of reserved memory cells in the reserved memory cell region is not assigned to access the normal memory cell area and the replacement memory cell region;

transmitting, by a host, a request for write and read operations to the first memory device; and

controlling, by the memory controller, the first memory device.

14. The method of claim 13 , further comprising:

generating, by the first memory device, a first signal associated with the redundancy memory cell area; and

storing, by the first memory device, the first address assigned to the redundancy memory cell area in a fuse unit of the memory device,

wherein the first signal generated by the first memory device indicates existence of the redundancy memory cell area so that the memory controller assigns the first address for accessing the redundancy memory cell area based on the first signal.

15. The method of claim 14 , wherein the first signal is provided to the fuse unit along with a Mode Register Set (MRS) signal, and the redundancy memory cell area is activated based on the first signal, the MRS signal, and the first address assigned to the redundancy memory cell area.

16. The method of claim 13 , further comprising:

receiving, by the memory controller, a second signal associated with the reserved memory cell region in the memory cell array;

assigning, by the memory controller, a second address for accessing the plurality of reserved memory cells in the reserved memory cell region based on the second signal; and

controlling, by the memory controller, the first memory device to activate the plurality of reserved memory cells based on the second address,

wherein a replacement memory cell in the replacement memory cell region replaces a failed memory cell in the normal memory cell area, and the plurality of reserved memory cells in the reserved memory cell region remain without replacing any failed memory cell in the normal memory cell area.

17. The method of claim 16 , further comprising monitoring, by the memory controller, a number of access requests activating each of a plurality of word lines in the first memory device,

wherein the controlling of the first memory device comprises controlling the first memory device to copy data stored in memory cells coupled to a first word line, for which the number of access requests is greater than a threshold value, into memory cells coupled to a second word line of the reserved memory cell region, and

wherein the method further comprises assigning, by the memory controller, an address for activating the first word line to the second word line.

18. The method of claim 16 , further comprising turning off, by the memory controller, power of the reserved memory cell region unless a request uses the reserved memory cell region.

19. The method of claim 16 , wherein the controlling of the first memory device comprises controlling the first memory device to assign the reserved memory cell to process a request when a capacity of a memory assigned for processing the request is insufficient.

20. The method of claim 13 , further comprising:

receiving, by the memory controller, a third signal associated with a redundancy memory cell area in a memory cell array of a second memory device, the memory cell array of the second memory device including a normal memory cell area and the redundancy memory cell area, the memory controller being provided external to the second memory device;

assigning, by the memory controller, a third address for accessing a redundancy memory cell in the redundancy memory cell area of the second memory device based on the third signal; and

controlling, by the memory controller, the second memory device to activate the redundancy memory cell of the second memory device based on the third address.