IP Library › Granted Patent US 10,998,403
Granted Patent B2
US 10,998,403 · App. 16/291,537 · Granted May 4, 2021

Device with increased forward biased safe operating area (FBSOA) through using source segments having different threshold voltages

Inventor: Praveen Shenoy (Chandler, AZ)
Assignee: INFINEON TECHNOLOGIES AMERICAS CORP.
H01L29/0869H01L29/0696H01L29/086H01L29/0865H01L29/7813
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Quick Facts
Patent No.
US 10,998,403
App. No.
16/291,537
Granted
May 4, 2021
Kind
B2
Abstract

A power device includes a gate, and a segmented source adjacent to the gate, wherein the segmented source includes segments having a first threshold voltage and includes segments having a second threshold voltage different from the first threshold voltage.

Claims (30)

1. A device comprising:

a gate; and

a segmented source proximate to the gate, wherein the segmented source comprises a plurality of first segments having a first threshold voltage and a plurality of second segments having a second threshold voltage different from the first threshold voltage,

wherein the segmented source comprises a symmetrical checkered source or an asymmetrical checkered source.

2. The device of claim 1 , wherein the segmented source further comprises a plurality of third segments having a third threshold voltage different from the first and second threshold voltages.

3. The device of claim 2 , wherein the segmented source further comprises a plurality of fourth segments having a fourth threshold voltage different from the first, second, and third threshold voltages.

4. The device of claim 1 , comprising an additional segmented source comprising a symmetrical laddered source or an asymmetrical laddered source.

5. The device of claim 1 , comprising an additional segmented source comprising a plurality of continuous, segmented, or staggered stripes.

6. The device of claim 1 , comprising at least one segmented source configured between two polysilicon gates.

7. The device of claim 1 , comprising at least one trenched gate configured between two segmented sources.

8. The device of claim 1 , wherein the plurality of first segments has a first dopant density and the plurality of second segments has a second dopant density different from the first dopant density.

9. A device comprising:

a plurality of concentric source segmentation zones extending from a center of the device to edges of the device, wherein each concentric source segmentation zone comprises:

a gate; and

a segmented source proximate to the gate, wherein the segmented source comprises a plurality of first segments having a first threshold voltage and a plurality of second segments having a second threshold voltage less than the first threshold voltage,

wherein an area ratio of a total area of the plurality of first segments to a total area of the plurality of second segments varies according to a distance of the concentric source segmentation zone from the center of the device.

10. The device of claim 9 , wherein the area ratio is at a maximum within a concentric source segmentation zone closest to the center of the device, and at a minimum within a concentric source segmentation zone closest to the edges of the device.

11. The device of claim 9 , wherein the plurality of concentric source segmentation zones comprises a plurality of oval or ellipse shaped concentric source segmentation zones.

12. The device of claim 9 , wherein the plurality of concentric source segmentation zones comprises a plurality of circular concentric source segmentation zones.

13. The device of claim 9 , wherein the plurality of concentric source segmentation zones comprises a plurality of rectangular concentric source segmentation zones.

14. The device of claim 9 , wherein the segmented source comprises a symmetrical laddered source or an asymmetrical laddered source.

15. The device of claim 9 , wherein the segmented source comprises a plurality of continuous, segmented, or staggered stripes.

16. The device of claim 9 , wherein the segmented source comprises a symmetrical checkered source or an asymmetrical checkered source.

17. A device comprising:

a plurality of cells, wherein each cell comprises:

a gate region on an upper surface of a device, wherein an inner perimeter of the gate region defines a source perimeter; and

a segmented source adjacent to the source perimeter, wherein the segmented source comprises a plurality of first segments having a first threshold voltage and a plurality of second segments having a second threshold voltage different from the first threshold voltage.

18. The device of claim 17 , wherein the segmented source comprises a plurality of third segments having a third threshold voltage different from the first and second threshold voltages.

19. The device of claim 17 , wherein the cell comprises a square, rectangular, hexagonal, or polygonal cell.

20. The device of claim 17 , wherein the source perimeter comprises a square, circle, rectangle, hexagonal, or polygonal perimeter.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 4, 2019
From: SHENOY, PRAVEEN
To: INFINEON TECHNOLOGIES AMERICAS CORP.
Reel/Frame 048493/0911 →
Continuity (1)
Related Publication 20200286994A1 · Sep 10, 2020
Cited By (1)
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