Semiconductor devices including recessed source/drain silicides and methods of forming the same
A gate all around field effect transistor (GAAFET) device may include a plurality of nanostructures that are spaced apart from one another in a channel region of the FET device above a substrate. A gate electrode can be in a GAA arrangement with the plurality of nanostructures and a semiconductor pattern can be on one side of the gate electrode. A contact in a contact trench in the semiconductor pattern and a silicide film can extend conformally on a side wall of the contact trench to a level in the channel region that is lower an uppermost one of the plurality of nanostructures.
1. A semiconductor device comprising:
a multi channel active pattern on a substrate;
a gate electrode crossing the multi channel active pattern;
a semiconductor pattern disposed on at least one side of the gate electrode on the substrate, an upper surface of the semiconductor pattern is lower than an upper surface of the gate electrode;
an interlayer insulating film on the semiconductor pattern;
a contact hole including an upper hole portion and a lower hole portion in the interlayer insulating film and the semiconductor pattern, the lower hole portion being formed at a bottom surface of the upper hole portion and extending within the semiconductor pattern toward the substrate;
a contact including an upper contact portion in the upper hole portion and a lower contact portion in the lower hole portion; and
a silicide film extending along a boundary between the contact and the semiconductor pattern,
wherein a width of the lower contact portion and the silicide film on a sidewall of the lower contact portion is less than a width of the upper contact portion.
2. The semiconductor device of claim 1 , wherein the silicide film extends along a part of a sidewall of the upper contact portion.
3. The semiconductor device of claim 1 , wherein one of the upper contact portion and the lower contact portion has a first contact part that is laterally overlapped with the silicide film, and a second contact part that is not laterally overlapped with the silicide film, and
wherein a width of the first contact part is less than a width of the second contact part at a boundary between the first contact part and the second contact part.
4. The semiconductor device of claim 1 , wherein the lower contact portion has a void.
5. The semiconductor device of claim 4 , wherein the void has an elongated shape extending in a thickness direction of the substrate.
6. The semiconductor device of claim 2 , wherein the contact includes a barrier conductive film formed along the contact hole and a filling conductive film filling the contact hole on the barrier conductive film.
7. The semiconductor device of claim 6 , wherein the filling conductive film includes at least one of tungsten(W), cobalt(Co), ruthenium(Ru) and molybdenum(Mo).
8. The semiconductor device of claim 6 , wherein a thickness of the barrier conductive film is different from a thickness of the silicide film.
9. The semiconductor device of claim 6 , wherein the lower contact portion does not include the filling conductive film.
10. The semiconductor device of claim 1 , wherein the multi channel active pattern includes a plurality of wire patterns, and
wherein the gate electrode wraps the plurality of wire patterns.
11. A semiconductor device comprising:
a multi channel active pattern on a substrate;
a gate electrode crossing the multi channel active pattern;
a semiconductor pattern disposed on at least one side of the gate electrode on the substrate;
a silicide film disposed in the semiconductor pattern and defining a part of a contact hole; and
a contact filling the contact hole on the silicide film,
wherein the contact hole includes an upper hole portion and a lower hole portion, and
wherein the silicide film defines a sidewall of the lower hole portion, a part of a sidewall of the upper hole portion, and a bottom surface of the upper hole portion connecting the sidewall of the lower hole portion with the sidewall of the upper hole portion.
12. The semiconductor device of claim 11 , wherein the contact includes an upper contact portion in the upper hole portion and a lower contact portion in the lower hole portion, and
wherein a width of the upper contact portion is greater than a width of the lower contact portion at a boundary between the upper contact portion and the lower contact portion.
13. The semiconductor device of claim 12 , wherein the upper contact portion has a first contact part that is laterally overlapped with the silicide film, and a second contact part that is not laterally overlapped with the silicide film, and
wherein a width of the first contact part is less than a width of the second contact part at a boundary between the first contact part and the second contact part.
14. The semiconductor device of claim 11 , wherein the contact has a void, and
wherein the void has an elongated shape extending in a thickness direction of the substrate.
15. The semiconductor device of claim 11 , wherein the contact includes a barrier conductive film formed along the contact hole and a filling conductive film filling the contact hole on the barrier conductive film,
wherein the filling conductive film includes at least one of tungsten(W), cobalt(Co), ruthenium(Ru) and molybdenum(Mo).
16. The semiconductor device of claim 11 , further comprising a field insulation film between the substrate and the gate electrode,
wherein the multi channel active pattern includes a fin-shaped pattern, and
wherein the field insulation film covers at least a part of a sidewall of the fin- shaped pattern.
17. A semiconductor device comprising:
a plurality of wire patterns on a substrate;
a gate structure including a gate electrode and crossing the plurality of wire patterns;
a semiconductor pattern disposed on at least one side of the gate structure on the substrate, an upper surface of the semiconductor pattern is lower than an upper surface of the gate electrode;
an interlayer insulating film on the semiconductor pattern; and
a contact structure in the interlayer insulating film and the semiconductor pattern, and including a silicide film and a contact on the silicide film, a part of contact extending within the semiconductor pattern toward the substrate,
wherein the contact structure includes a lower contact structure and an upper contact structure on the lower contact structure, and
wherein a width of the lower contact structure is less than a width of the upper contact structure at a boundary between the lower contact structure and the upper contact structure.
18. The semiconductor device of claim 16 , wherein the contact includes a lower contact portion and an upper contact portion on the lower contact portion,
wherein a width of the upper contact portion is greater than a width of the lower contact portion at a boundary between the upper contact portion and the lower contact portion, and
wherein the silicide film extends along a part of a sidewall of the upper contact portion.
19. The semiconductor device of claim 16 , wherein the contact includes a barrier conductive film defining a contact filling hole and a filling conductive film filling the contact filling hole, and
wherein a thickness of the barrier conductive film is different from a thickness of the silicide film.
20. The semiconductor device of claim 16 , wherein the lower contact structure has a void.