Thermal silicon etch
Exemplary methods for selectively removing silicon (e.g. polysilicon) from a patterned substrate may include flowing a fluorine-containing precursor into a substrate processing chamber to form plasma effluents. The plasma effluents may remove silicon (e.g. polysilicon, amorphous silicon or single crystal silicon) at significantly higher etch rates compared to exposed silicon oxide, silicon nitride or other dielectrics on the substrate. The methods rely on the temperature of the substrate in combination with some conductivity of the surface to catalyze the etch reaction rather than relying on a gas phase source of energy such as a plasma.
1. An etching method comprising:
flowing a fluorine-containing precursor into a substrate processing region of a semiconductor processing chamber, wherein a substrate is positioned within the substrate processing region and the substrate comprises silicon and a dielectric, wherein the silicon and the dielectric are exposed on sidewalls of a trench formed in stacked alternating layers of the silicon and the dielectric, and wherein the substrate processing region is maintained plasma-free while flowing the fluorine-containing precursor; and
laterally removing silicon from the sidewalls of the trench at a greater removal rate than the dielectric.
2. The method of claim 1 , wherein the dielectric is one of silicon oxide or silicon nitride.
3. The method of claim 1 , wherein the lateral removal of silicon removes silicon with a horizontal etch progression.
4. The method of claim 1 , wherein the lateral removal of silicon removes silicon at an etch rate more than twenty times faster than the dielectric.
5. The method of claim 1 , wherein the lateral removal of silicon is performed at a substrate temperature of less than 500° C.
6. The method of claim 1 , wherein the lateral removal of silicon is performed at a partial pressure of fluorine-containing precursor which is more than 1 Torr.
7. The method of claim 1 , wherein the stacked alternating layers comprise at least 50 layers of alternating layers of the silicon and the dielectric.
8. The method of claim 1 , wherein the trench is characterized by an aspect ratio of greater than or about 50:1.
9. The method of claim 1 , wherein a layer of the silicon at an upper region of the trench and a layer of silicon at a lower region of the trench differ in lateral etch amounts by less than about 2 nm.
10. The method of claim 1 , wherein the fluorine-containing precursor is one of atomic fluorine, diatomic fluorine, nitrogen trifluoride, carbon tetrafluoride, hydrogen fluoride, or xenon difluoride.
11. An etching method comprising:
flowing a fluorine-containing precursor into a substrate processing region of a semiconductor processing chamber, wherein a substrate is positioned within the substrate processing region and the substrate comprises polysilicon and dielectric, wherein the polysilicon and the dielectric are exposed on sidewalls of a trench formed in stacked alternating layers of the polysilicon and the dielectric, and wherein the substrate processing region is maintained plasma-free while flowing the fluorine-containing precursor; and
laterally etching the polysilicon from the sidewalls of the trench at a greater removal rate than the dielectric.
12. The method of claim 11 , wherein the lateral removal of polysilicon removes polysilicon with a horizontal etch progression.
13. The method of claim 11 , wherein the lateral removal of polysilicon removes polysilicon at an etch rate more than eight times faster than dielectric.
14. The method of claim 11 , wherein the lateral removal of polysilicon is performed at a temperature of less than 500° C.
15. The method of claim 11 , wherein the lateral removal of polysilicon is performed at a partial pressure of fluorine-containing precursor within the substrate processing region which is more than 1 Torr.
16. The method of claim 11 , wherein the trench is characterized by an aspect ratio of greater than or about 50:1.
17. The method of claim 11 , wherein the stacked alternating layers comprise at least 50 layers of alternating layers of the polysilicon and the dielectric.
18. The method of claim 11 , wherein a layer of the polysilicon at an upper region of the trench and a layer of silicon at a lower region of the trench differ in lateral etch amounts by less than about 2 nm.