Silicon carbide insulated-gate power field effect transistor
Insulated gate semiconductor device includes drift layer of first conductivity type; first base region of second conductivity type on the drift layer; carrier-supply region of the first conductivity type on the first base region and having higher impurity concentration than the drift layer; a first contact region of the second conductivity type on the first base region and having higher impurity concentration than the first base regions; cell-pillars each having polygonal-shape, arranged in a lattice-pattern, sidewalls of the cell-pillars are defined by trenches penetrating the carrier-supply region, the first contact region, and the first base region; and insulated-gate electrode-structures in the trenches. A first pillar selected from the cell-pillars includes the carrier-supply region, the first contact region and the first base region, and the first contact regions are in contact with a limited portion of an outer periphery of a first pillar at a top surface of the first pillar.
1. An insulated gate semiconductor device, comprising:
a drift layer of a first conductivity type;
a plurality of first base regions of a second conductivity type disposed on the drift layer;
a plurality of carrier-supply regions of the first conductivity type provided on the first base regions and having a higher impurity concentration than the drift layer;
a plurality of first contact regions of the second conductivity type provided on the first base regions and having a higher impurity concentration than the first base regions;
a plurality of cell-pillars each having a polygonal-shape, arranged in a lattice-pattern, sidewalls of the cell-pillars are defined by a trench penetrating a corresponding carrier-supply region, first contact region, and first base region; and
an insulated-gate electrode-structure provided in the trench,
wherein
each of first pillars from among the cell-pillars includes a carrier-supply region, a first contact region, and a first base region,
each of the first contact regions is in contact with a limited portion of an outer periphery of a corresponding first pillar at a top surface of the corresponding first pillar, and
wherein
each top surface of the cell-pillars has an off-angle of two degrees or more and eight degrees or less in the <11-20> direction with respect to the <0001> direction, or
each cross-sectional shape perpendicular to height directions of the cell-pillars on the top surface is a hexagon and a pair of parallel sides of the hexagon extend in a <11-20> direction.
2. The semiconductor device of claim 1 , wherein
each cross-sectional shape perpendicular to height directions of the cell-pillars on the top surface is the hexagon and the pair of parallel sides of the hexagon extend in a <11-20> direction, and
each of the first contact regions is provided in contact with the (1-100) plane of the cell-pillars, or
each of the first contact regions of the cell-pillars is arranged on a line extending in a <1-100> direction on a principal surface of the drift layer.
3. An insulated gate semiconductor device, comprising:
a drift layer of a first conductivity type;
a plurality of first base regions of a second conductivity type disposed on the drift layer;
a plurality of carrier-supply regions of the first conductivity type provided on the first base regions and having a higher impurity concentration than the drift layer;
a plurality of first contact regions of the second conductivity type provided on the first base regions and having a higher impurity concentration than the first base regions;
a plurality of cell-pillars each having a polygonal-shape, arranged in a lattice-pattern, sidewalls of the cell-pillars are defined by a trench penetrating a corresponding carrier-supply region, first contact region, and first base region, the plurality of cell-pillars including first pillars and a second pillar, wherein
each of the first pillars includes a carrier-supply region, a first contact region and a first base region,
each of the first contact regions is in contact with a limited portion of an outer periphery of a corresponding first pillar at a top surface of the corresponding first pillar, and
the second pillar includes a second base region and a second contact region provided on the second base region and in contact with an outer periphery of a top surface of the second pillar;
an insulated-gate electrode-structure provided in the trench;
gate-bottom protection-regions of the second conductivity type having a higher impurity concentration than the first base region, buried to be in contact with a bottom of the trench; and
a base-bottom buried-region provided at the bottom of the second base region, configured to provide a conductive path for electrically connecting the second contact region and a part of the gate-bottom protection-regions.
4. The insulated gate semiconductor device of claim 3 , wherein the second contact region is in contact with an entire outer periphery of the second pillar.
5. An insulated gate semiconductor device, comprising:
a drift layer of a first conductivity type;
a plurality of first base regions of a second conductivity type disposed on the drift layer;
a plurality of carrier-supply regions of the first conductivity type provided on the first base regions and having a higher impurity concentration than the drift layer;
a plurality of first contact regions of the second conductivity type provided on the first base regions and having a higher impurity concentration than the first base regions;
a plurality of cell-pillars each having a polygonal-shape, arranged in a lattice-pattern, sidewalls of the cell-pillars are defined by a trench penetrating a corresponding carrier-supply region, first contact region, and first base region; and
an insulated-gate electrode-structure provided in the trench,
wherein
each of first pillars from among the cell-pillars includes a carrier-supply region, a first contact region, and a first base region,
for each of the first pillars, the carrier-supply region is in contact with the insulated-gate electrode-structure of the trench and the first contact region is in contact with another insulated-gate electrode-structure of another trench adjacent to the trench,
a second pillar from among the cell-pillars includes a second base region and a second contact region provided on the second base region, the second contact region not being in contact with a carrier-supply region, and
each of the first contact regions is in contact with a limited portion of an outer periphery of a corresponding first pillar at a top surface of the corresponding first pillar.
6. The insulated gate semiconductor device of claim 5 , wherein at a top surface of the first pillar, an outer periphery of the first pillar is in contact with a corresponding carrier-supply region except the limited portion being contacted with a corresponding first contact region, in each of the first pillars.
7. The insulated gate semiconductor device of claim 5 , wherein the lattice-pattern is established so that straight lines connecting the centers of the cell-pillars intersects with regularity.
8. The insulated gate semiconductor device of claim 5 , wherein each cross-sectional shape perpendicular to height directions of the cell-pillars is any one of a rectangular-shape, a hexagonal-shape and an octagonal-shape.
9. The semiconductor device of claim 5 , wherein
the plurality of first contact regions and the plurality of carrier-supply regions extend to a same depth with respect to the first base regions.
10. The semiconductor device of claim 5 , further comprising gate-bottom protection-regions of the second conductivity type having a higher impurity concentration than the first base region, buried to be in contact with a bottom of the trench.
11. The semiconductor device of claim 10 , wherein
the second contact region is in contact with an outer periphery of a top surface of the second pillar, and
the insulated gate semiconductor device further comprises a base-bottom buried-region provided at the bottom of the second base region, configured to provide a conductive path for electrically connecting the second contact region and a part of the gate-bottom protection-regions.
12. The insulated gate semiconductor device of claim 5 , wherein
each top surface of the cell-pillars has an off-angle of two degrees or more and eight degrees or less in the <11-20> direction with respect to the <0001> direction, or
each cross-sectional shape perpendicular to height directions of the cell-pillars on the top surface is a hexagon and a pair of parallel sides of the hexagon extend in a <11-20> direction.
13. The insulated gate semiconductor device of claim 12 , wherein
each cross-sectional shape perpendicular to height directions of the cell-pillars on the top surface is the hexagon and the pair of parallel sides of the hexagon extend in a <11-20> direction, and
each of the first contact regions is provided in contact with the (1-100) plane of the cell-pillars.
14. The insulated gate of claim 12 , wherein
each cross-sectional shape perpendicular to height directions of the cell-pillars on the top surface is the hexagon and the pair of parallel sides of the hexagon extend in a <11-20> direction, and
each of the first contact regions of the cell-pillars is arranged on a line extending in a <1-100> direction on a principal surface of the drift layer.
15. A method for manufacturing an insulated gate semiconductor device, comprising:
forming a plurality of gate-bottom protection-regions of a second conductivity type on a top surface of a drift layer of a first conductivity type; and
selectively forming a base-bottom buried-region on a selected portion of the gate-bottom protection-regions;
growing a base region on the drift layer and on a top surface of the base-bottom buried-region, the base region having a second conductivity type and having an impurity concentration lower than the plurality of gate-bottom protection-regions;
selectively forming a plurality of carrier-supply regions of the first conductivity type having a higher impurity concentration than the drift layer in an upper portion of the base region;
selectively forming a plurality of first contact regions of the second conductivity type having a higher impurity concentration than the base region in a selected upper portion of the base region;
selectively forming a second contact region of the second conductivity type having a higher impurity concentration than the base region, in another selected upper portion of the base region;
digging a trench penetrating a corresponding carrier-supply region, first contact region, and portion of the base region disposed below the corresponding carrier-supply region to define a plurality of polygonal cell-pillars arranged in a lattice-pattern, such that a top surface of a corresponding gate-bottom protection region among the plurality of gate-bottom protection regions is exposed at a bottom of the trench; and
forming an insulated-gate electrode-structure having a gate insulating film and a gate electrode on an inside of the trench,
the another selected upper portion is allocated at a specified portion such that a conductive path for electrically connecting the second contact region and the gate-bottom protection-regions can be provided.
16. The method of claim 15 , wherein a second pillar from among the cell-pillars includes the second contact region such that the second contact region is in contact with an entire outer periphery of the second pillar.
17. A method for manufacturing an insulated gate semiconductor device, comprising:
growing a base region on a top surface of a drift layer of a first conductivity type, the base region having a second conductivity type;
selectively forming a plurality of carrier-supply regions of the first conductivity type having a higher impurity concentration than the drift layer in an upper portion of the base region;
selectively forming a plurality of first contact regions and a second contact region of the second conductivity type having a higher impurity concentration than the base region in a selected upper portion of the base region;
digging trenches penetrating at least one of a corresponding carrier-supply region, first contact region, second contact region, and portions of the base region disposed below the corresponding carrier-supply region, first contact region, and second contact region, to define a plurality of polygonal cell-pillars arranged in a lattice-pattern; and
forming an insulated-gate electrode-structure having a gate insulating film and a gate electrode on an inside of a trench among the trenches,
wherein each of first pillars from among the cell-pillars includes a carrier-supply region, a first contact region, and a portion of the base region disposed below the carrier-supply region,
for each of the first pillars the carrier-supply region is in contact with the insulated-gate electrode-structure of the trench and the first contact region is in contact with another insulated-gate electrode-structure of another trench adjacent to the trench,
a second pillar from among the cell-pillars includes the second contact region and a portion of the base region which is disposed below the second contact region, the second contact region not being in contact with a carrier-supply region, and
in each of the first pillars, a corresponding first contact region is in contact with a limited portion of an outer periphery of a corresponding first pillar at a top surface of the corresponding first pillar.
18. The method of claim 17 , wherein in an upper portion of the first pillar, a corresponding carrier-supply region is arranged so that, except for the limited portion of the outer periphery of the first pillar, the corresponding carrier-supply region can be contacted with the outer periphery of the first pillar, in each of the first pillars.
19. The method of claim 17 , further comprising forming a plurality of gate-bottom protection-regions of the second conductivity type having a higher impurity concentration than the base region, configured to be buried at respective portions to be in contact with a bottom of the trench.
20. The method of claim 17 , wherein the first contact region is formed in a stripe-shape.