Anti-reflection bottom-emitting type OLED display device and manufacturing method thereof

1. An anti-reflection bottom-emitting type OLED display device, comprising:

a substrate provided with a plurality of black matrixes spaced apart from each other, wherein the black matrixes are disposed in the substrate and divide the substrate into a first bottom lining and a second bottom lining;

a plurality of drive transistors, wherein the drive transistors are arranged in an array on the substrate and disposed corresponding to the black matrixes respectively, and the first bottom lining is disposed further away from each drive transistor than the second bottom lining;

a light emitting layer disposed on the drive transistors;

a buffer layer disposed on the substrate, each black matrix being disposed between the buffer layer and the substrate or between the buffer layer and the light emitting layer; and

an inorganic insulating layer disposed between the first bottom lining and the black matrixes or between the second bottom lining and the black matrixes;

wherein an opening region is defined between each two adjacent black matrixes, the light emitting layer comprises a plurality of light-emitting material layers arranged in an array, each light-emitting material layer defines a display region and a non-display region, each opening region is disposed corresponding to each display region, and each non-display region is disposed corresponding to each black matrix; and

wherein an orthogonal projection of the opening region projected on the substrate is not overlapped with an orthogonal projection of the driver transistor projected on the substrate.

2. The anti-reflection bottom-emitting type OLED display device according to claim 1 , wherein the inorganic insulating layer is made of SiNx, SiOx, or SiCx; the first bottom lining or the second bottom lining is made of a material selected from one of polyimide (PI), polycarbonate (PC), polyethersulfone (PES), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyarylate (PAR), and glass fiber reinforced plastic (FRP), or a combination thereof; and the first bottom lining and the second bottom lining are made of the same material or different materials.

3. The anti-reflection bottom-emitting type OLED display device according to claim 1 , comprising, sequentially disposed on the substrate, the buffer layer, an active layer, a gate electrode insulating layer, a gate electrode layer, an interlayer insulating layer, a source/drain electrode layer, a planarization layer, and a packaging layer disposed on the light emitting layer; the light emitting layer comprising a plurality of anode electrodes, the light-emitting material layers, a plurality of cathode electrodes, and a plurality of pixel defining layers (PDLs), wherein the pixel defining layers define and limit a size of each light-emitting material layer.

4. An anti-reflection bottom-emitting type OLED display device, comprising:

a substrate provided with a plurality of black matrixes spaced apart from each other, wherein the black matrixes are disposed in the substrate and divide the substrate into a first bottom lining and a second bottom lining;

a plurality of drive transistors, wherein the drive transistors are arranged in an array on the substrate and disposed corresponding to the black matrixes respectively, and the first bottom lining is disposed further away from each drive transistor than the second bottom lining;

a light emitting layer disposed on the drive transistors; and

an inorganic insulating layer disposed between the first bottom lining and the black matrixes or between the second bottom lining and the black matrixes;

wherein an opening region is defined between each two adjacent black matrixes, the light emitting layer comprises a plurality of light-emitting material layers arranged in an array, each light-emitting material layer defines a display region and a non-display region, each opening region is disposed corresponding to each display region, and each non-display region is disposed corresponding to each black matrix; and

wherein an orthogonal projection of the opening region projected on the substrate is not overlapped with an orthogonal projection of the driver transistor projected on the substrate.

5. The anti-reflection bottom-emitting type OLED display device according to claim 4 , further comprising a buffer layer disposed on the substrate, the black matrixes being disposed between the buffer layer and the substrate or between the buffer layer and the light emitting layer.

6. The anti-reflection bottom-emitting type OLED display device according to claim 4 , wherein the inorganic insulating layer is made of SiNx, SiOx or SiCx; the first bottom lining or the second bottom lining is made of a material selected from one of polyimide (PI), polycarbonate (PC), polyethersulfone (PES), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyarylate (PAR), and glass fiber reinforced plastic (FRP), or a combination thereof; and the first bottom lining and the second bottom lining are made of the same material or different materials.

7. The anti-reflection bottom-emitting type OLED display device according to claim 4 , comprising, sequentially disposed on the substrate, the buffer layer, an active layer, a gate electrode insulating layer, a gate electrode layer, an interlayer insulating layer, a source/drain electrode layer, a planarization layer, and a packaging layer disposed on the light emitting layer; the light emitting layer comprising a plurality of anode electrodes, the light-emitting material layers, a plurality of cathode electrodes, and a plurality of pixel defining layers (PDLs), wherein the pixel defining layers define and limit a size of each light-emitting material layer.