High-resolution Micro-OLED display module and manufacturing method thereof

1. A method for manufacturing a high-resolution Micro-OLED, comprising:

S 1 , providing a substrate, and manufacturing light-emitting pixel units on the substrate;

S 2 , encapsulating the light-emitting pixel units by a film encapsulation technique, and forming a film encapsulation layer;

S 3 , manufacturing sub-pixel units on a surface of the film encapsulation layer, and depositing a metal reflective layer between two sub-pixel units which are adjacent to each other;

S 4 , manufacturing a metal oxide layer on surfaces of the metal reflective layer and the sub-pixel units by a deposition technique, to obtain a high-resolution Micro-OLED matrix; and

S 5 , using a cover plate to encapsulate the high-resolution Micro-OLED matrix produced in step S 4 , to obtain a high-resolution Micro-OLED,

wherein step S 1 comprises:

S 11 , providing a substrate, and manufacturing on the substrate a number of conductive through-holes which are arranged regularly;

S 12 , evaporating an anode layer on the substrate by a self-aligning process, wherein the anode layer comprises a number of anode units, and the anode units are set to be in one-to-one correspondence with the conductive through-holes;

S 13 , evaporating an OLED light-emitting layer on the surface of the anode layer, wherein the OLED light-emitting layer is a blue light OLED light-emitting layer; and

S 14 , evaporating a cathode layer on the surface of the OLED light-emitting layer, to form light-emitting pixel units.

2. The method for manufacturing a high-resolution Micro-OLED according to claim 1 , wherein the anode unit has a width of 5-10 μm.

3. The method for manufacturing a high-resolution Micro-OLED according to claim 1 , wherein step S 3 is specifically as follows:

S 31 , manufacturing sub-pixel units on the surface of the film encapsulation layer by a photolithographic process and a reactive ion etching process;

S 32 , manufacturing a metal reflective layer between two sub-pixel units which are adjacent to each other by a photolithographic process and an etching process; and

S 33 , printing to form quantum dot filter structures inside the sub-pixel units by an electrofluid printing technique.

4. The method for manufacturing a high-resolution Micro-OLED according to claim 3 , wherein a spacing between two sub-pixel units which are adjacent to each other is 8-15 μm, and the metal reflective layer is an Al reflective layer.

5. The method for manufacturing a high-resolution Micro-OLED according to claim 3 , wherein the quantum dot filter structures include a red quantum dot filter structure and a green quantum dot filter structure, the red quantum dot filter structure and the green quantum dot filter structure are respectively arranged in different sub-pixel units, and the quantum dot filter structures in two adjacent sub-pixel units are different.

6. The method for manufacturing a high-resolution Micro-OLED according to claim 1 , wherein the metal oxide layer is obtained through deposition by an atomic deposition technique.

7. The method for manufacturing a high-resolution Micro-OLED according to claim 6 , wherein the metal oxide layer is an Al 2 O 3 layer, and a thickness of the Al 2 O 3 layer is 50 nm.

8. A high-resolution Micro-OLED display module, comprising a high-resolution Micro-OLED layer and a thin film transistor array electrically connected with the high-resolution Micro-OLED layer, wherein the high-resolution Micro-OLED layer is manufactured by the method for manufacturing a high-resolution Micro-OLED according to claim 1 ,

wherein the high-resolution Micro-OLED layer comprises a substrate and light-emitting pixel units arranged on the substrate, the substrate is provided with a number of conductive through-holes which are arranged regularly, and the thin film transistor array is electrically connected with the light-emitting pixel units via the conductive through-holes.

9. The high-resolution Micro-OLED display module according to claim 8 , wherein the anode unit has a width of 5-10 μm.

10. The high-resolution Micro-OLED display module according to claim 8 , wherein the sub-pixel units comprises:

a metal reflective layer between two sub-pixel units which are adjacent to each other; and

quantum dot filter structures inside the sub-pixel units,

wherein the quantum dot filter structures include a red quantum dot filter structure and a green quantum dot filter structure, the red quantum dot filter structure and the green quantum dot filter structure are respectively arranged in different sub-pixel units, and the quantum dot filter structures in two adjacent sub-pixel units are different.

11. The high-resolution Micro-OLED display module according to claim 8 , wherein the metal oxide layer is obtained through deposition by an atomic deposition technique.

12. The high-resolution Micro-OLED display module according to claim 11 , wherein the metal oxide layer is an Al 2 O 3 layer, and a thickness of the Al 2 O 3 layer is 50 nm.

13. A method for manufacturing a high-resolution Micro-OLED, comprising:

S 1 , providing a substrate, and manufacturing light-emitting pixel units on the substrate;

S 2 , encapsulating the light-emitting pixel units by a film encapsulation technique, and forming a film encapsulation layer;

S 3 , manufacturing sub-pixel units on a surface of the film encapsulation layer, and depositing a metal reflective layer between two sub-pixel units which are adjacent to each other;

S 4 , manufacturing a metal oxide layer on surfaces of the metal reflective layer and the sub-pixel units by a deposition technique, to obtain a high-resolution Micro-OLED matrix; and

S 5 , using a cover plate to encapsulate the high-resolution Micro-OLED matrix produced in step S 4 , to obtain a high-resolution Micro-OLED,

wherein step S 3 is specifically as follows:

S 31 , manufacturing sub-pixel units on the surface of the film encapsulation layer by a photolithographic process and a reactive ion etching process;

S 32 , manufacturing a metal reflective layer between two sub-pixel units which are adjacent to each other by a photolithographic process and an etching process; and

S 33 , printing to form quantum dot filter structures inside the sub-pixel units by an electrofluid printing technique.

14. The method for manufacturing a high-resolution Micro-OLED according to claim 13 , wherein a spacing between two sub-pixel units which are adjacent to each other is 8-15 μm, and the metal reflective layer is an Al reflective layer.

15. The method for manufacturing a high-resolution Micro-OLED according to claim 13 , wherein the quantum dot filter structures include a red quantum dot filter structure and a green quantum dot filter structure, the red quantum dot filter structure and the green quantum dot filter structure are respectively arranged in different sub-pixel units, and the quantum dot filter structures in two adjacent sub-pixel units are different.

16. The method for manufacturing a high-resolution Micro-OLED according to claim 13 , wherein the metal oxide layer is obtained through deposition by an atomic deposition technique.

17. The method for manufacturing a high-resolution Micro-OLED according to claim 16 , wherein the metal oxide layer is an Al 2 O 3 layer, and a thickness of the Al 2 O 3 layer is 50 nm.