Memory cell, nonvolatile semiconductor storage device, and method for manufacturing nonvolatile semiconductor storage device
When a memory cell (MC) is downsized by reducing the distance between a drain region ( 12 a ) and a source region ( 12 b ) on the surface of a fin (S 2 ) with a high impurity concentration inside the fin (S 2 ), the shape of the fin (S 2 ) can be set such that a potential difference between a memory gate electrode (MG) and the fin (S 2 ) is reduced to suppress the occurrence of disturbance. Accordingly, the memory cell (MC) achieves downsizing and suppression of the occurrence of disturbance.
1. A memory cell comprising:
a semiconductor substrate covered by an insulating layer;
a fin disposed on the semiconductor substrate and protruding from the insulating layer;
a memory gate structure including a lower memory gate insulating film, a charge storage layer, an upper memory gate insulating film, and a memory gate electrode stacked, and being disposed on the insulating layer so as to extend over the fin;
a first select gate structure including a first select gate electrode stacked on a first select gate insulating film, and being disposed on the insulating layer so as to extend over the fin along a first sidewall spacer disposed on one sidewall of the memory gate structure;
a second select gate structure including a second select gate electrode stacked on a second select gate insulating film, and being disposed on the insulating layer so as to extend over the fin along a second sidewall spacer disposed on the other sidewall of the memory gate structure;
a drain region provided adjacent to the first select gate structure on a surface of the fin, insulated from the first select gate electrode, and electrically connected with a bit line; and
a source region provided adjacent to the second select gate structure on the surface of the fin, insulated from the second select gate electrode, and electrically connected with a source line,
wherein the first select gate structure, the memory gate structure, and the second select gate structure are provided between the drain region and the source region, and
wherein a relation of Hfin>Wfin holds where Hfin represents an in-electrode protruding height of the fin as a distance between an upper surface of the fin and a bottom surface of the memory gate electrode on the insulating layer, and Wfin represents a width of the fin in a direction in which the first select gate structure and the second select gate structure extend over the fin.
2. The memory cell according to claim 1 , wherein the memory gate electrode, the first select gate electrode, and the second select gate electrode contain metallic material.
3. The memory cell according to claim 1 , wherein the first select gate electrode is sidewall-shaped along the first sidewall spacer, and the second select gate electrode is sidewall-shaped along the second sidewall spacer.
4. A nonvolatile semiconductor storage device comprising a plurality of memory cells arranged in a matrix of rows and columns and each including a memory gate electrode connected with a memory gate line, wherein each memory cell is the memory cell according to claim 1 , and the memory gate line is shared by the memory cells arranged in the matrix.
5. The memory cell comprising:
a semiconductor substrate covered by an insulating layer;
a fin disposed on the semiconductor substrate and protruding from the insulating layer;
a memory gate structure including a lower memory gate insulating film, a charge storage layer, an upper memory gate insulating film, and a memory gate electrode stacked, and being disposed on the insulating layer so as to extend over the fin;
a first select gate structure including a first select gate electrode stacked on a first select gate insulating film, and being disposed on the insulating layer so as to extend over the fin along a first sidewall spacer disposed on one sidewall of the memory gate structure;
a second select gate structure including a second select gate electrode stacked on a second select gate insulating film, and being disposed on the insulating layer so as to extend over the fin along a second sidewall spacer disposed on the other sidewall of the memory gate structure;
a drain region provided adjacent to the first select gate structure on a surface of the fin, insulated from the first select gate electrode, and electrically connected with a bit line; and
a source region provided adjacent to the second select gate structure on the surface of the fin, insulated from the second select gate electrode, and electrically connected with a source line, wherein the first select gate structure, the memory gate structure, and the second select gate structure are provided between the drain region and the source region, and
wherein relations of L 1 ≤1.5·Wfin and L 2 ≤1.5·Wfin hold, where Wfin represents a width of the fin in a direction in which the first select gate structure and the second select gate structure extend over the fin, and L 1 and L 2 represent a gate length of the first select gate electrode and a gate length of the second select gate electrode, respectively, in a direction in which the fin extends orthogonally to a direction in which the first select gate structure and the second select gate structure extend over the fin.
6. The memory cell comprising:
a semiconductor substrate covered by an insulating layer;
a fin disposed on the semiconductor substrate and protruding from the insulating layer;
a memory gate structure including a lower memory gate insulating film, a charge storage layer, an upper memory gate insulating film, and a memory gate electrode stacked, and being disposed on the insulating layer so as to extend over the fin;
a first select gate structure including a first select gate electrode stacked on a first select gate insulating film, and being disposed on the insulating layer so as to extend over the fin along a first sidewall spacer disposed on one sidewall of the memory gate structure;
a second select gate structure including a second select gate electrode stacked on a second select gate insulating film, and being disposed on the insulating layer so as to extend over the fin along a second sidewall spacer disposed on the other sidewall of the memory gate structure;
a drain region provided adjacent to the first select gate structure on a surface of the fin, insulated from the first select gate electrode, and electrically connected with a bit line; and
a source region provided adjacent to the second select gate structure on the surface of the fin, insulated from the second select gate electrode, and electrically connected with a source line,
wherein the first select gate structure, the memory gate structure, and the second select gate structure are provided between the drain region and the source region, and
wherein a distance between the semiconductor substrate and a lower surface of the memory gate electrode is longer than distances between the semiconductor substrate and lower surfaces of the first select gate electrode and the second select gate electrode, and positions of the lower surfaces of the first select gate electrode and the second select gate electrode with respect to the semiconductor substrate are closer than the lower surface of the memory gate electrode with respect to the semiconductor substrate.