Three-dimensional memory array

1. A three-dimensional (3-D) memory array, comprising:

a first plurality of conductive lines separated from one other by an insulation material;

a second plurality of conductive lines; and

a plurality of pairs of conductive pillars arranged in a staggered pattern through the first plurality of conductive lines and the insulation material;

wherein the conductive pillars of each respective pair are coupled to a same conductive line of the second plurality of conductive lines, and

wherein the staggered pattern comprises the plurality of pairs of conductive pillars being adjacent to and in line with each other in an x-direction, in line with each other in an y-direction, and nonadjacent to each other in the y-direction.

2. The 3-D memory array of claim 1 , further comprising a plurality of memory cells, wherein each respective memory cell includes:

a portion of one of the conductive pillars of one of the plurality of pairs conductive pillars; and

a portion of a storage element material formed partially around that conductive pillar.

3. The 3-D memory array of claim 1 , wherein the staggered pattern comprises the plurality of pairs of conductive pillars being arranged in a hexagonal pattern.

4. The 3-D memory array of claim 3 , wherein:

the hexagonal pattern comprises one of the plurality of pairs of conductive pillars surround by six other ones of the plurality of pairs of conductive pillars; and

the six other ones of the plurality of pairs of conductive pillars are equidistant from one another and the one of the plurality of pairs of conductive pillars.

5. The 3-D memory array of claim 1 , wherein a distance between each one of the plurality of pairs of conductive pillars is such that a density of the plurality of pairs of conductive pillars is at least 1.15 pillars per a unit of area.

6. A memory device, comprising:

a three-dimensional (3-D) memory array comprising a plurality of vertical stacks arranged in a staggered pattern, wherein each respective one of the plurality of vertical stacks includes:

a first conductive pillar arranged to extend substantially perpendicular to a plurality of conductive lines; and

a second conductive pillar arranged to extend substantially perpendicular to the plurality of conductive lines,

wherein the staggered pattern comprises the plurality of vertical stacks being adjacent to and in line with each other in an x-direction, in line with each other in an y-direction, and nonadjacent to each other in the y-direction; and

decoder circuitry coupled to the 3-D memory array and configured to select one of the plurality of conductive lines and one of the plurality of vertical stacks during a program operation or sense operation performed on the 3-D memory array.

7. The memory device of claim 6 , further comprising a storage element material formed partially around the first conductive pillar and partially around the second conductive pillar.

8. The memory device of claim 7 , wherein the storage element material formed partially around the first conductive pillar is separated from the storage element material formed partially around the second conductive pillar by an insulation material.

9. The memory device of claim 6 , wherein the decoder circuitry is configured to select the one of the plurality of vertical stacks by applying an access voltage to the first and the second conductive pillars of the one of the plurality of vertical stacks.

10. The memory device of claim 6 , wherein the decoder circuitry includes a plurality of decoders.

11. The memory device of claim 10 , wherein a quantity of the plurality of decoders is based on a quantity of floors of the 3-D memory array.

12. The memory device of claim 10 , wherein a quantity of the plurality of decoders is based on a quantity of the plurality of vertical stacks in the x-direction.

13. A three-dimensional (3-D) memory array, comprising:

a first conductive line material formed in a plurality of planes separated from one another by a first insulation material, wherein a plurality of openings are formed through the first conductive line material and the first insulation material in a staggered pattern,

wherein the staggered pattern comprises the plurality of openings being adjacent to and in line with each other in an x-direction, in line with each other in an y-direction, and nonadjacent to each other in the y-direction;

a storage element material formed in contact with a sidewall of each one of the plurality of openings; and

a second conductive line material formed as a pair of pillars in each one of the plurality of openings and contact with the storage element material.

14. The 3-D memory array of claim 13 , further comprising a second insulation material formed in an additional opening through the second conductive line material and the storage element material formed in each respective opening.

15. The 3-D memory array of claim 14 , wherein the first insulation material and the second insulation material are a same insulation material.

16. The 3-D memory array of claim 13 , further comprising a metal material formed in contact with portions of the second conductive line material in each one of the plurality of openings.

17. The 3-D memory array of claim 13 , wherein the staggered pattern comprises at least 1.15 pillars per a unit of area of the first conductive line material.

18. The 3-D memory array of claim 13 , wherein a diameter of the plurality of openings is based on a dielectric thickness associated with a voltage to be applied to the 3-D memory array.

19. The 3-D memory array of claim 13 , wherein a diameter of the plurality of openings is between approximately 40 and 80 nanometers, inclusive.