Photodiode and photosensitive device
View Patent ↗Provided is a semiconductor photodiode which has an electrode structure having not only high adhesion to a Mg 2 Si material but also improved overall performance including photosensitivity. A photodiode comprising: a pn junction of a magnesium silicide crystal; an electrode comprising a material that is in contact with p-type magnesium silicide; and an electrode comprising a material that is in contact with n-type magnesium silicide, wherein the material that is in contact with p-type magnesium silicide is a material which has a work function of 4.81 eV or more and reacts with silicon to form a silicide or form an alloy with magnesium.
1. A photodiode comprising: a pn junction of a magnesium silicide crystal; an electrode comprising a material that is in contact with p-type magnesium silicide; and an electrode comprising a material that is in contact with n-type magnesium silicide,
wherein the material that is in contact with p-type magnesium silicide is a material which has a work function of 4.81 eV or more and is capable of reacting with silicon to form a silicide or form an alloy with magnesium, and
the material that is in contact with p-type magnesium silicide is at least one metal selected from the group consisting of nickel, cobalt, platinum, palladium, iridium, rhenium, rhodium, beryllium, selenium, and tellurium, or at least one alloy thereof,
wherein the electrode comprising the material that is in contact with p-type magnesium silicide comprises: the material that is in contact with p-type magnesium silicide; and other material that is in contact with the former material, and
the other material is at least one metal selected from the group consisting of gold, palladium and platinum or at least one alloy thereof, except for the metal selected as the material that is in contact with p-type magnesium silicide.
2. The photodiode according to claim 1 , wherein the material that is in contact with n-type magnesium silicide is a material which has a work function of less than 4.81 eV and is capable of reacting with silicon to form a silicide or form an alloy with magnesium.
3. The photodiode according to claim 1 , wherein the material that is in contact with n-type magnesium silicide is at least one metal selected from the group consisting of aluminum, gallium, indium, arsenic, antimony, bismuth, silver, copper, zinc, cadmium, titanium, vanadium, chromium, manganese, iron, yttrium, zirconium, niobium, molybdenum, hafnium, tantalum and tungsten, or at least one alloy thereof.
4. The photodiode according to claim 1 , wherein the material that is in contact with p-type magnesium silicide is in a form of a thin film having a thickness of from 1 to 1000 nm.
5. The photodiode according to claim 1 , wherein the p-type magnesium silicide is magnesium silicide doped with silver.
6. The photodiode according to claim 1 , wherein at least one of the electrodes is a ring-shaped electrode having an opening on its inner side.
7. A photosensitive device comprising the photodiode according to claim 1 .