Barrier for thin film lithium batteries made on flexible substrates and related methods
A thin film solid state battery configured with barrier regions formed on a flexible substrate member and method. The method includes forming a bottom thin film barrier material overlying and directly contacting a surface region of a substrate. A first current collector region can be formed overlying the bottom barrier material and forming a first cathode material overlying the first current collector region. A first electrolyte can be formed overlying the first cathode material, and a second current collector region can be formed overlying the first anode material. The method also includes forming an intermediary thin film barrier material overlying the second current collector region and forming a top thin film barrier material overlying the second electrochemical cell. The solid state battery can comprise the elements described in the method of fabrication.
1. A thin-film solid-state battery device comprising:
a substrate;
a first barrier layer overlying a top surface of the substrate and covering the entire top surface of the substrate;
a first electrochemical cell overlying the substrate;
a second electrochemical cell overlying the first electrochemical cell, wherein the first electrochemical cell and the second electrochemical cell are arranged in a stack formation; and
a second barrier layer overlying the second electrochemical cell, the second barrier layer configured to coat and enclose the stack formation,
wherein the first barrier layer comprises a metal phosphate material.
2. The device of claim 1 , wherein at least one of the first barrier layer or the second barrier layer has a thickness of 30 nm to 100 nm.
3. The device of claim 1 , wherein at least one of the first barrier layer or the second barrier layer has a thickness of 50 nm.
4. The device of claim 1 , wherein the metal phosphate material comprises Li 3 PO 4 .
5. The device of claim 1 , wherein the device further comprises at least two post or self-terminated connectors, wherein the connectors are attached to one or more of the first electrochemical cell and the second electrochemical cell.
6. The device of claim 5 , wherein the device has an exposed region free from the second barrier layer which overlies an area of the substrate, and the connectors are provided within the exposed region.
7. The device of claim 1 , wherein the substrate comprises a polymer film selected from at least one of polyethylene terephthalate, polyethylene naphthalate, or polyimide.
8. The device of claim 1 , wherein the substrate comprises a metal foil selected from at least one of copper, stainless steel, aluminum, or nickel.
9. The device of claim 8 , wherein the substrate comprises a current collector for at least one of the first electrochemical cell or the second electrochemical cell.
10. The device of claim 1 , wherein the thickness of the substrate is 1.5 μm to 30 μm.
11. A method of manufacturing a thin-film solid-state battery device comprising:
providing a substrate;
depositing a first barrier layer overlying a top surface of the substrate and covering the entire top surface of the substrate;
depositing a first electrochemical cell overlying the substrate;
depositing a second electrochemical cell overlying the first electrochemical cell, wherein the first electrochemical cell and the second electrochemical cell are arranged in a stack formation; and
depositing a second barrier layer overlying the second electrochemical cell, wherein the first barrier layer comprises a metal phosphate material.
12. The method of claim 11 , wherein at least one of the first barrier material or the second barrier material is formed by e-beam evaporation.
13. The method of claim 11 , wherein the first electrochemical cell, the first barrier layer, the second electrochemical cell, and the second barrier layer are deposited in a single vacuum chamber.
14. The method of claim 11 , wherein the device is manufactured in a vacuum chamber without breaking the vacuum between the steps of depositing the first electrochemical cell, depositing the first barrier layer, depositing the second electrochemical cell, and depositing the second barrier layer.
15. The method of claim 11 , wherein at least one of the first barrier layer or the second barrier layer is deposited at a rate of 0.1 to 10 Ås −1 .
16. The device of claim 1 , comprising a third barrier layer overlying the first electrochemical cell, wherein the second electrochemical cell overlies the third barrier layer.
17. The device of claim 16 , wherein the third barrier layer comprises a metal phosphate material.
18. A thin-film solid-state battery device comprising:
a substrate;
a first barrier layer overlying a top surface of the substrate and covering the entire top surface of the substrate;
a first electrochemical cell overlying the substrate;
a second electrochemical cell overlying the first electrochemical cell, wherein the first electrochemical cell and the second electrochemical cell are arranged in a stack formation; and
a second barrier layer overlying only a top surface of the second electrochemical cell,
wherein at least one of the first barrier layer or the second barrier layer comprises a metal phosphate material.