Semiconductor nanoparticle-containing dispersion liquid and film

1. A semiconductor nanoparticle-containing dispersion liquid containing:

semiconductor nanoparticles from which zinc, sulfur, and indium are detected by X-ray photoelectron spectroscopy; and

acrylate or methacrylate,

wherein a molar ratio of the zinc to the indium in the semiconductor nanoparticles which is acquired by the X-ray photoelectron spectroscopy satisfies Expression (1a),

wherein 2.25<Zn/In<9  (1a).

2. The semiconductor nanoparticle-containing dispersion liquid according to claim 1 ,

wherein a molar ratio of the sulfur to the indium in the semiconductor nanoparticles which is acquired by the X-ray photoelectron spectroscopy satisfies Expression (2a),

wherein 1.25<S/In<10.6  (2a).

3. The semiconductor nanoparticle-containing dispersion liquid according to claim 1 ,

wherein, in a scattering intensity due to X-ray small angle scattering, an inclination of a tangent at a q value of 0.2 nm −1 is in a range of −3 to 0.

4. The semiconductor nanoparticle-containing dispersion liquid according to claim 1 ,

wherein the molar ratio of the zinc to the indium in the semiconductor nanoparticles which is acquired by the X-ray photoelectron spectroscopy satisfies Expression (1b), and the molar ratio of the sulfur to the indium in the semiconductor nanoparticles which is acquired by the X-ray photoelectron spectroscopy satisfies Expression (2b), and

in a scattering intensity due to X-ray small angle scattering, an inclination of a tangent at a q value of 0.2 nm −1 is in a range of −2 to 0,

wherein 2.4<Zn/In≤7.9  (1b), and

3.4<S/In≤7.5  (2b).

5. The semiconductor nanoparticle-containing dispersion liquid according to claim 1 ,

wherein the semiconductor nanoparticles have an average particle diameter of 6 nm or less.

6. The semiconductor nanoparticle-containing dispersion liquid according to claim 5 ,

wherein the semiconductor nanoparticles have the average particle diameter of 3 nm to 5 nm.

7. The semiconductor nanoparticle-containing dispersion liquid according to claim 1 ,

wherein the semiconductor nanoparticle includes:

a core which contains a Group III element and a Group V element;

a first shell which covers at least a part of a surface of the core; and

a second shell which covers at least a part of the first shell.

8. The semiconductor nanoparticle-containing dispersion liquid according to claim 7 ,

wherein the Group III element contained in the core is In, and

the Group V element contained in the core is any one of P, N, or As.

9. The semiconductor nanoparticle-containing dispersion liquid according to claim 8 ,

wherein the Group III element contained in the core is In, and

the Group V element contained in the core is P.

10. The semiconductor nanoparticle-containing dispersion liquid according to claim 7 ,

wherein the core further contains a Group II element.

11. The semiconductor nanoparticle-containing dispersion liquid according to claim 10 ,

wherein the Group II element contained in the core is Zn.

12. The semiconductor nanoparticle-containing dispersion liquid according to claim 7 ,

wherein the first shell contains a Group II element or a Group III element, and

in a case where the first shell contains the Group III element, the Group III element contained in the first shell is a Group III element different from the Group III element contained in the core.

13. The semiconductor nanoparticle-containing dispersion liquid according to claim 7 ,

wherein the first shell is a Group II-VI semiconductor which contains a Group II element and a Group VI element or a Group III-V semiconductor which contains a Group III element and a Group V element, and

in a case where the first shell is the Group III-V semiconductor, the Group III element contained in the Group III-V semiconductor is a Group III element different from the Group III element contained in the core.

14. The semiconductor nanoparticle-containing dispersion liquid according to claim 13 ,

wherein in a case where the first shell is the Group II-VI semiconductor, the Group II element is Zn and the Group VI element is Se or S, and

in a case where the first shell is the Group III-V semiconductor, the Group III element is Ga and the Group V element is P.

15. The semiconductor nanoparticle-containing dispersion liquid according to claim 13 ,

wherein the first shell is the Group III-V semiconductor,

the Group III element is Ga, and

the Group V element is P.

16. The semiconductor nanoparticle-containing dispersion liquid according to claim 7 ,

wherein the second shell is a Group II-VI semiconductor which contains a Group II element and a Group VI element or a Group III-V semiconductor which contains a Group III element and a Group V element.

17. The semiconductor nanoparticle-containing dispersion liquid according to claim 16 ,

wherein the second shell is the Group II-VI semiconductor,

the Group II element is Zn, and

the Group VI element is S.

18. The semiconductor nanoparticle-containing dispersion liquid according to claim 7 ,

wherein the core, the first shell, and the second shell are respectively a crystal system having a zinc blende structure.

19. The semiconductor nanoparticle-containing dispersion liquid according to claim 7 ,

wherein, among the core, the first shell, and the second shell, a band gap of the core is the smallest, and

the core and the first shell respectively have a type 1 band structure.

20. A film which is produced using the semiconductor nanoparticle-containing dispersion liquid according to claim 1 .