Methods and apparatus for low temperature silicon nitride films
Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250° C. to form a silicon nitride film with a low etch rate without damaging the metal surface.
1. A method of depositing a film, the method comprising:
exposing a substrate with a cobalt layer thereon to a first silicon precursor in a first process region of a processing chamber to form a silicon-containing film;
laterally moving the substrate through a first gas curtain to a second process region of the processing chamber;
exposing the silicon-containing film to a first nitrogen-containing reactant in the second process region of the processing chamber to form a silicon nitride film without the use of plasma;
laterally moving the substrate through a second gas curtain to a third process region of the processing chamber;
exposing the silicon nitride film to a first hydrogen-containing plasma in the third process region of the processing chamber to form a low etch silicon nitride film, the first hydrogen-containing plasma generated by a first power source coupled to a first match circuit, the first power source having a first phase;
laterally moving the substrate through a third gas curtain to a fourth process region of the processing chamber;
exposing the substrate to a second silicon precursor in the fourth process region to form a silicon-containing film;
laterally moving the substrate through a fourth gas curtain to a fifth process region of the processing chamber;
exposing the silicon-containing film to a second nitrogen-containing reactant in the fifth process region of the processing chamber to form a silicon nitride film without the use of plasma;
laterally moving the substrate through a fifth gas curtain to a sixth process region of the processing chamber;
exposing the silicon nitride film to a second hydrogen-containing plasma in the sixth process region of the processing chamber to form a low etch silicon nitride, the second hydrogen-containing plasma generated by a second power source coupled to a second match circuit, the second power source having a second phase; and
controlling the first phase and/or the second phase to maintain a phase difference in the range of about 170° to about 190°.
2. The method of claim 1 , wherein the third process region and the sixth process region are on opposite sides of a central axis of the processing chamber.
3. The method of claim 1 , further comprising exposing the substrate to a nitrogen-containing plasma in an additional processing region of the processing chamber and laterally moving the substrate through an additional gas curtain to one of the third, fourth, fifth, sixth or first process region after exposure to the nitrogen-containing plasma.
4. The method of claim 3 , wherein the additional processing region is positioned between the second process region and the third process region and between the fifth process region and the sixth process region so that the substrate is exposed to the nitrogen-containing plasma prior to exposure to the hydrogen-containing plasma.