Image sensor
An image sensor including: a semiconductor substrate having a first region and a second region; an isolation region filling an isolation trench that partially penetrates the semiconductor substrate; a plurality of photoelectric conversion regions defined by the isolation region and forming a first hexagonal array on a plane that is parallel to a surface of the semiconductor substrate; and a plurality of microlenses respectively corresponding to the plurality of photoelectric conversion regions, and forming a second hexagonal array on the plane that is parallel to the surface of the semiconductor substrate.
1. An image sensor, comprising:
a semiconductor substrate having a first region and a second region;
an isolation region filling first and second isolation trenches that partially penetrate the semiconductor substrate, wherein the isolation region includes an insulating liner formed on an inner wall of each of the first and second isolation trenches and a buried insulating layer disposed on the insulating liner and filling the first and second isolation trenches, the buried insulating layer completely covering a surface of the semiconductor substrate between the first and second isolation trenches;
a plurality of photoelectric conversion regions defined by the isolation region and forming a first hexagonal array on a plane that is parallel to a surface of the semiconductor substrate; and
a plurality of microlenses respectively corresponding to the plurality of photoelectric conversion regions, and forming a second hexagonal array on the plane that is parallel to the surface of the semiconductor substrate,
wherein a center of each of a first photoelectric conversion region of the plurality of photoelectric conversion regions and a first microlens of the plurality of microlenses corresponding to the first photoelectric conversion region overlap each other in the first region, and a center of each of a second photoelectric conversion region of the plurality of photoelectric conversion regions and a second microlens of the plurality of microlenses corresponding to the second photoelectric conversion region do not overlap each other in the second region.
2. The image sensor of claim 1 , wherein the plurality of photoelectric conversion regions are arranged along a first direction parallel to the surface of the semiconductor substrate, and the plurality of microlenses are arranged along the first direction.
3. The image sensor of claim 2 , wherein the center of the first photoelectric conversion region and the center of the first microlens correspond to a first line passing through the first photoelectric conversion region and the first microlens along a second direction perpendicular to the first direction.
4. The image sensor of claim 3 , wherein the center of second photoelectric conversion region corresponds to a second line passing through the second photoelectric conversion region along the second direction, and the center of second microlens corresponds to a third line passing through the second microlens along the second direction, wherein the second and third lines are spaced apart from each other in the first direction.