Non-volatile memory structure with positioned doping
Disclosed is a resistive random access memory (RRAM). The RRAM includes a bottom electrode made of tungsten and a switching layer made of hafnium oxide disposed above the bottom electrode, wherein the switching layer includes a filament and one or more lateral regions including a doping material that are between a top region and a bottom region of the switching layer. The RRAM further includes a top electrode disposed above the switching layer.
1. A resistive random access memory (RRAM) comprising:
a bottom electrode comprised of tungsten;
a switching layer comprised of hafnium oxide disposed above the bottom electrode, the switching layer comprising one or more lateral regions including a doping material, wherein the one or more lateral regions are positioned between a top region and a bottom region of the switching layer; and
a top electrode disposed above the switching layer;
wherein a filament is formed in the switching layer between the top region and the bottom region of the switching layer upon application of a first voltage between the top electrode and the bottom electrode;
wherein a gap in the filament is formed upon application of a second voltage between the top electrode and the bottom electrode; and
wherein a location of the one or more lateral regions within the switching layer corresponds to the gap in the filament.
2. The RRAM of claim 1 , wherein the doping material comprises aluminum.
3. The RRAM of claim 1 , wherein the one or more lateral regions comprises:
a first lateral region including the doping material; and
a second lateral region including a second doping material that is different than the doping material.
4. The RRAM of claim 1 , wherein the location of the one or more lateral regions within the switching layer corresponding to the gap in the filament increases data retention of the RRAM structure.
5. The RRAM of claim 1 , wherein each of the one or more lateral regions comprise a layer of the doping material.
6. The RRAM of claim 1 , wherein a concentration of the doping material in the one or more lateral regions increases near a center of each of the one or more lateral regions.
7. The RRAM of claim 1 , wherein the switching layer is formed of multiple dielectric layers.
8. The RRAM of claim 7 , wherein the multiple dielectric layers comprise at least one of hafnium oxide, tantalum oxide, or titanium oxide.
9. The RRAM of claim 1 , wherein the filament is an oxygen vacancy filament.
10. The RRAM of claim 1 , wherein the switching layer switches between a high resistance state when the second voltage is applied and a low resistance state when the first voltage is applied.
11. The RRAM of claim 10 , wherein:
the high resistance state has a resistance between 100-500 kiloohms, inclusively; and
the low resistance state has a resistance between 10-30 kiloohms, inclusively.
12. The RRAM of claim 10 , wherein:
the high resistance state has a resistance between 100 megaohms and 1 gigaohm, inclusively; and
the low resistance state has a resistance between 10 kiloohms and 100 kiloohms, inclusively.
13. The RRAM of claim 10 , wherein a ratio of the resistance in the high resistance state to the resistance in the low resistance state is greater than 10.
14. The RRAM of claim 1 , wherein the doping material comprises at least one of: zirconium; cadmium; gadolinium; tantalum; tungsten; or nickel.
15. The RRAM of claim 1 , wherein the doping material comprises at least one of: nickel; silicon; magnesium; strontium; barium; scandium; yttrium; indium; germanium; tin; titanium; hafnium; niobium; molybdenum; antimony; tellurium; thallium; lead; copper; or silver.
16. The RRAM of claim 1 , wherein the top electrode comprises at least one of: aluminum and copper.
17. The RRAM of claim 1 , wherein the top electrode is a bit line.
18. The RRAM of claim 1 , wherein the top electrode is a standard metallization layer for connections on a semiconductor device.