IP Library › Granted Patent US 11,024,737
Granted Patent B2
US 11,024,737 · App. 16/070,207 · Granted Jun 1, 2021

Etching fin core to provide fin doubling

Inventors: Chandra S. Mohapatra (Hillsboro, OR); Glenn A. Glass (Portland, OR); Anand S. Murthy (Portland, OR); Karthik Jambunathan (Portland, OR)
Assignee: Intel Corporation
H01L29/785H01L21/02433H01L21/02546H01L21/30617H01L21/764H01L29/045H01L29/1037H01L29/1054H01L29/205H01L29/267H01L29/42376H01L29/66545H01L29/66795H01L29/66818H01L29/7853
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Quick Facts
Patent No.
US 11,024,737
App. No.
16/070,207
Granted
Jun 1, 2021
Kind
B2
Abstract

A replacement fin layer is deposited on a sub-fin layer in trenches isolated by an insulating layer on a substrate. The replacement fin layer has first component rich side portions and a second component rich core portion. The second component rich core portion is etched to generate a double fin structure comprising the first component rich fins.

Claims (35)

1. An electronic device comprising:

a sub-fin layer in trenches isolated by an insulating layer on a substrate, the insulating layer having a top surface; and

a replacement fin layer comprising a first material component and a second material component on the sub-fin layer, wherein the replacement fin layer comprises a double fin structure comprising a first and a second first material component rich fins, wherein a second material component rich layer is between and joins the first and second first material component rich fins, the second material component rich layer on the sub-fin layer, wherein the second material component rich layer has a different composition than the sub-fin, wherein each of the first and second first material component rich fins has an inner sidewall, an outer sidewall, and a bottom surface, the bottom surface below the top surface of the insulating layer, wherein the inner sidewalls of the first and second first material component rich fins face one another, wherein the bottom surface is a sloped surface that slopes downwardly from the inner sidewall to the outer sidewall, and wherein a topmost surface of the second material component rich layer is below top surfaces of the first and second first material component rich fins.

2. The electronic device of claim 1 , wherein the first material component is a first group III material component and the second material component is a second group III material component.

3. The electronic device of claim 1 , wherein the replacement fin layer is a III-V material layer.

4. The electronic device of claim 1 , further comprising:

a gate structure on the double fin structure; and

source/drain regions on the double fin structure at opposite sides of the gate structure.

5. The electronic device of claim 1 , wherein the first and second first material component rich fins are on a portion of the sub-fin layer.

6. A computing device, comprising:

a board; and

a component coupled to the board, the component including an integrated circuit structure, comprising:

a sub-fin layer in trenches isolated by an insulating layer on a substrate, the insulating layer having a top surface; and

a replacement fin layer comprising a first material component and a second material component on the sub-fin layer, wherein the replacement fin layer comprises a double fin structure comprising a first and a second first material component rich fins, wherein a second material component rich layer is between and joins the first and second first material component rich fins, the second material component rich layer on the sub-fin layer, wherein the second material component rich layer has a different composition than the sub-fin, wherein each of the first and second first material component rich fins has an inner sidewall, an outer sidewall, and a bottom surface, the bottom surface below the top surface of the insulating layer, wherein the inner sidewalls of the first and second first material component rich fins face one another, wherein the bottom surface is a sloped surface that slopes downwardly from the inner sidewall to the outer sidewall, and wherein a topmost surface of the second material component rich layer is below top surfaces of the first and second first material component rich fins.

7. The computing device of claim 6 , further comprising:

a memory coupled to the board.

8. The computing device of claim 6 , further comprising:

a communication chip coupled to the board.

9. The computing device of claim 6 , further comprising:

a camera coupled to the board.

10. The computing device of claim 6 , further comprising:

a battery coupled to the board.

11. The computing device of claim 6 , further comprising:

an antenna coupled to the board.

12. The computing device of claim 6 , wherein the component is selected from the group consisting of a processor, a communications chip, and a digital signal processor.

13. The computing device of claim 6 , wherein the computing device is selected from the group consisting of a mobile phone, a laptop, a desk top computer, a server, and a set-top box.

14. The computing device of claim 6 , wherein the first material component is a first group III material component and the second material component is a second group III material component.

15. The computing device of claim 6 , wherein the replacement fin layer is a III-V material layer.

16. The computing device of claim 6 , wherein the integrated circuit structure further comprises a gate structure on the double fin structure, and source/drain regions on the double fin structure at opposite sides of the gate structure.

17. The computing device of claim 6 , wherein the first and second first material component rich fins are on a portion of the sub-fin layer.

18. An electronic device comprising:

a sub-fin layer in trenches isolated by an insulating layer on a substrate, the insulating layer having a top surface; and

a replacement fin layer comprising a first material component and a second material component on the sub-fin layer, wherein the replacement fin layer comprises a double fin structure comprising a pair of the first material component rich fins, wherein a second material component rich layer is between and joins first and second first material component rich fins of the pair of first material component rich fins, the second material component rich layer on the sub-fin layer, wherein the second material component rich layer has a different composition than the sub-fin, wherein each of the first material component rich fins has a bottom surface below the top surface of the insulating layer, wherein a portion of the sub-fin layer is laterally between the first material component rich fins, and wherein a topmost surface of the second material component rich layer is below top surfaces of the first and second first material component rich fins.

19. The electronic device of claim 18 , wherein the first material component is a first group III material component and the second material component is a second group III material component.

20. The electronic device of claim 18 , wherein the replacement fin layer is a III-V material layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 12, 2021
From: MOHAPATRA, CHANDRA S.; GLASS, GLENN A.; MURTHY, ANAND S.; JAMBUNATHAN, KARTHIK
To: INTEL CORPORATION
Reel/Frame 055896/0442 →
Continuity (1)
Related Publication 20190035926A1 · Jan 31, 2019