Power amplifier layout

1. A radio-frequency amplifier comprising:

a semiconductor substrate;

a first cascoded device implemented on the semiconductor substrate, the first cascoded device including a first radio-frequency transistor coupled to a first cascode transistor; and

a second cascoded device implemented on the semiconductor substrate directly adjacent to the first cascoded device, the second cascoded device including a second radio-frequency transistor coupled to a second cascode transistor, the first radio-frequency transistor being positioned directly adjacent to the second cascode transistor, the first cascoded device being electrically connected in parallel to the second cascoded device.

2. The radio-frequency amplifier of claim 1 wherein the first cascode transistor is configured to handle more power than the first radio-frequency transistor and the second cascode transistor is configured to handle more power than the second radio-frequency transistor.

3. The radio-frequency amplifier of claim 1 wherein the first cascoded device is implemented on the semiconductor substrate in a same row as the second cascoded device.

4. The radio-frequency amplifier of claim 1 wherein the first cascoded device is implemented on the semiconductor substrate in a same column as the second cascoded device.

5. The radio-frequency amplifier of claim 1 wherein the first cascoded device and the second cascoded device are coupled to a common input and a common output.

6. The radio-frequency amplifier of claim 1 wherein the first radio-frequency transistor and the second radio-frequency transistor are each a common emitter transistor and the first cascode transistor and the second cascode transistor are each a common base transistor.

7. The radio-frequency amplifier of claim 6 further comprising an input node to receive a signal and an output node to provide an amplified signal, the input node being coupled to a base of the first radio-frequency transistor and a base of the second radio-frequency transistor, the output node being coupled to a collector of the first cascode transistor and a collector of the second cascode transistor.

8. The radio-frequency amplifier of claim 7 wherein the base of the first cascode transistor is coupled to an emitter of the first radio-frequency transistor through a bypass capacitance.

9. The radio-frequency amplifier of claim 2 wherein the radio-frequency amplifier is a power amplifier.

10. The radio-frequency amplifier of claim 2 wherein the first cascode transistor has a larger area than the first radio-frequency transistor and the second cascode transistor has a larger area than the second radio-frequency transistor.

11. The radio-frequency amplifier of claim 2 wherein the first radio-frequency transistor is positioned above the first cascode transistor, and the second radio-frequency transistor is positioned below the second cascode transistor.

12. The radio-frequency amplifier of claim 1 wherein the first radio-frequency transistor is positioned in a first row, the first cascode transistor is positioned in a second row, the second radio-frequency transistor is positioned in the second row, and the second cascode transistor is positioned in the first row.

13. A semiconductor die comprising:

a substrate; and

a power amplifier implemented on the substrate and to receive and amplify a signal, the power amplifier including a first cascoded device and a second cascoded device directly adjacent to the first cascoded device, the first cascoded device being coupled in parallel to the second cascoded device, the first cascoded device including a first radio-frequency transistor coupled to a first cascode transistor, the second cascoded device including a second radio-frequency transistor coupled to a second cascode transistor, the second cascoded device being positioned relative to the first cascoded device such that the second cascode transistor is adjacent to the first radio-frequency transistor.

14. The semiconductor die of claim 13 wherein the first cascode transistor has a larger area than the first radio-frequency transistor and the second cascode transistor has a larger area than the second radio-frequency transistor.

15. The semiconductor die of claim 13 wherein the first cascoded device is positioned in a same row as the second cascoded device.

16. A radio-frequency module comprising:

a packaging substrate configured to receive a plurality of components; and

a power amplification system implemented on the packaging substrate, the power amplification system including a power amplifier to receive and amplify a signal, the power amplifier including a first cascoded device and a second cascoded device directly adjacent to the first cascoded device, the first cascoded device and the second cascoded device being connected in parallel, the first cascoded device including a first radio-frequency transistor coupled to a first cascode transistor, the second cascoded device including a second radio-frequency transistor coupled to a second cascode transistor, the first radio-frequency transistor being positioned directly adjacent to the second cascode transistor.

17. The radio-frequency module of claim 16 wherein the radio-frequency module is a power amplifier module.

18. The radio-frequency module of claim 16 wherein the radio-frequency module is a front-end module.

19. The radio-frequency module of claim 16 wherein the first cascoded device is positioned in a same row as the second cascoded device.

20. The semiconductor die of claim 13 wherein the first radio-frequency transistor is positioned in a first row, the first cascode transistor is positioned in a second row, the second radio-frequency transistor is positioned in the second row, and the second cascode transistor is positioned in the first row.