Atomic layer deposition of films comprising silicon, carbon and nitrogen using halogenated silicon precursors
Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.
1. A method of depositing a film comprising Si, C and N, the method comprising
exposing a substrate surface to a silicon precursor, wherein the silicon precursor comprises a halogenated bis(silyl) methane precursor selected from the group consisting of:
and
exposing the substrate to a nitrogen-containing plasma or a nitrogen precursor.
2. A method of depositing a film comprising Si, C and N, the method comprising:
exposing a substrate surface to a silicon precursor, wherein the silicon precursor is a halogenated bis(silyl) methane-based precursor is selected from the group consisting of
and
exposing the substrate to a nitrogen-containing plasma.
3. The method of claim 2 , wherein the nitrogen-containing plasma comprises ammonia, an amine or carbonitride.
4. A method of depositing a film comprising Si, C and N, the method comprising:
exposing a substrate surface to a silicon precursor, wherein the silicon precursor comprises a halogenated bis(silyl) methane precursor selected from the group consisting of:
exposing the substrate surface to a nitrogen precursor to provide a film; and
exposing the film to a densification plasma.
5. The method of claim 4 , wherein the nitrogen precursor comprises an alkyl amine.
6. The method of claim 4 , further comprising exposing the film comprising Si and N to a carbon source.
7. The method of claim 6 , wherein the carbon source comprises exposing the film to a compound with a C═C bond.