IP Library Granted Patent US 11,028,979
Granted Patent B2
US 11,028,979 · App. 15/268,736 · Granted Jun 8, 2021

Lighting source using solid state emitter and phosphor materials

Inventors: Nadarajah Narendran (Clifton Park, NY); Yimin Gu (Los Gatos, CA)
Assignee: Rensselaer Polytechnic Institute
F21K9/64F21K2/00F21V3/02F21V5/004F21V7/06F21V9/08F21V9/32F21V9/38F21V9/45F21V13/14H01L33/508F21Y2113/13F21Y2115/10F21Y2115/30H01L25/0753H01L33/507H01L33/58H01L2924/0002H01L2933/0091
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Quick Facts
Patent No.
US 11,028,979
App. No.
15/268,736
Granted
Jun 8, 2021
Kind
B2
Abstract

A light-emitting apparatus includes a base, a first semiconductor radiation emitting diode, having a top surface and a side wall, disposed on the base, a transparent structure disposed on the base and surrounding the side wall and covering the top surface, and a phosphor structure placed within the transparent structure surrounding the side wall and covering the top surface. The first semiconductor radiation emitting diode has a width smaller than that of the base and is configured to emit a light which can be converted into a forward transferred down-converted radiation light and a back transferred down-converted radiation light by the phosphor structure. At least a portion of the forward transferred down-converted radiation light and the back transferred down-converted radiation light are emitted toward the base.

Claims (18)

1. A light-emitting apparatus comprising:

a base;

a first semiconductor radiation emitting diode disposed on the base, and having a top surface, a side wall, and a width smaller than that of the base; and

a phosphor structure comprising a first portion with a first phosphor material therein and a second portion with a second phosphor material therein, the first portion and the second portion being separated from each other,

wherein the first portion has a first end proximal the first semiconductor radiation emitting diode and a second end distal the first semiconductor radiation emitting diode, the proximal end having a width smaller than a width of the distal end, and the second portion is centrally located at the distal end as measured along the width of the distal end, and

wherein the first semiconductor radiation emitting diode is configured to emit a primary light which is converted into a forward transferred down-converted radiation light and a back transferred down-converted radiation light by both of the first portion and the second portion.

2. The light-emitting apparatus of claim 1 , wherein the base is pervious to light from the first semiconductor radiation emitting diode.

3. The light-emitting apparatus of claim 1 , further comprising a second semiconductor radiation emitting diode arranged with the first semiconductor radiation emitting diode in an array configuration on the base.

4. The light-emitting apparatus of claim 1 , further comprising a transparent structure disposed on the base and directly contacting the side wall and the top surface,

wherein the transparent structure has an upper portion and a lower portion which have different widths in a cross-sectional view.

5. The light-emitting apparatus of claim 1 , wherein the base has an upper surface on which the first semiconductor radiation emitting diode is disposed, and a bottom surface devoid of the phosphor structure.

6. The light-emitting apparatus of claim 1 , further comprising a transparent structure disposed on the base and directly contacting the side wall and the top surface,

wherein the transparent structure has a transparent side wall, and at least a portion of the forward transferred down-converted radiation light and the back transferred down-converted radiation light are configured to pass through the transparent side wall.

7. The light-emitting apparatus of claim 6 , wherein the transparent side wall is not perpendicular to the base.

8. The light-emitting apparatus of claim 1 , wherein the first portion, the second portion, or both portions of the phosphor structure are sandwiched between the first semiconductor radiation emitting diode and the base.

9. The light-emitting apparatus of claim 1 , wherein the first portion, the second portion, or both portions of the phosphor structure contact the base.

10. The light-emitting apparatus of claim 1 , wherein the first portion and the second portion are disposed on different locations of the base.

11. The light-emitting apparatus of claim 4 , wherein the first portion, the second portion, or both portions of the phosphor structure are placed within the transparent structure.

Continuity (8)
Division 14593135 · Jan 9, 2015
Continuation 13758362 · Feb 4, 2013
Continuation 12947899 · Nov 17, 2010
Continuation 11642089 · Dec 20, 2006
Continuation In Part 10583105
Provisional Application 60568373 · May 5, 2004
Provisional Application 60636123 · Dec 15, 2004
Related Publication 20170003000A1 · Jan 5, 2017