Memory system and method of controlling operations on bad memory block based on temperature

1. A memory system comprising:

a memory device comprising a plurality of memory blocks; and

a controller suitable for controlling an operation of the memory device,

wherein the controller performs a fake operation on a bad block that is determined to be no longer used to store data when a temperature of the memory device is in a low temperature range.

2. The memory system of claim 1 , wherein the fake operation comprises a program operation, an erase operation or a read operation.

3. The memory system of claim 1 , further comprising a temperature sensor suitable for detecting the temperature of the memory device.

4. The memory system of claim 1 , wherein the controller performs a background operation according to an execution condition for the background operation based on the temperature of the memory device.

5. The memory system of claim 4 , wherein the background operation comprises at least one of a garbage collection, wear leveling and a read reclaim.

6. The memory system of claim 4 , wherein the execution condition for the background operation comprises an execution time, a number of execution targets in the set memory block and an execution period.

7. The memory system of claim 4 ,

wherein the controller performs a first background operation according to a first execution condition when the temperature is in a normal temperature range,

performs a second background operation according to a second execution condition when the temperature is in the low temperature range, and

performs a third background operation according to a third execution condition when the temperature is in a high temperature range.

8. The memory system of claim 7 , wherein the second execution condition has more execution targets and a shorter execution period than the first execution condition.

9. The memory system of claim 7 , wherein the third execution condition has fewer execution targets and a longer execution period than the first execution condition.

10. A method of controlling a temperature, by a memory system, the memory system comprising a memory device including a plurality of memory blocks and a controller suitable for controlling the memory device, and the method comprising:

detecting a temperature of the memory device; and

performing a fake operation on a bad block that is determined to be no longer used to store data when the detected temperature of the memory device is in a low temperature range.

11. The method of claim 10 , wherein the fake operation comprises a program operation, an erase operation or a read operation.

12. The method of claim 10 , further comprising performing a background operation according to an execution condition for the background operation performed on a memory block based on the detected temperature.

13. The method of claim 12 , wherein the performing of the background operation is performed prior to the performing of the fake operation.

14. The method of claim 12 , wherein the performing of the background operation is performed after the performing of the fake operation.

15. The method of claim 12 , wherein the background operation comprises at least one of a garbage collection, wear leveling and a read reclaim.

16. The method of claim 12 , wherein the execution condition comprises an execution time, a number of execution targets in the set memory block and an execution period.

17. The method of claim 16 , further comprising:

performing a first background operation according to a first execution condition when the temperature is in a normal temperature range;

performing a second background operation according to a second execution condition when the temperature is in the low temperature range; and

performing a background operation according to a third execution condition when the temperature is in a high temperature range.

18. The method of claim 17 , wherein:

the second execution condition has more execution targets and a longer execution time than the first execution condition, and

the third execution condition has fewer execution targets and a shorter execution time than the first execution condition.

19. A memory system comprising:

a memory device comprising a plurality of memory blocks; and

a controller suitable for controlling an operation of the memory device,

wherein the controller performs a fake operation on a set memory block not used to store data when a temperature of the memory device is in a low temperature range,

wherein the controller performs a first background operation according to a first execution condition when the temperature is in a normal temperature range, performs a second background operation according to a second execution condition when the temperature is in the low temperature range, and performs a third background operation according to a third execution condition when the temperature is in a high temperature range, and

wherein the second execution condition has more execution targets and a shorter execution period than the first execution condition.

20. A memory system comprising:

a memory device comprising a plurality of memory blocks; and

a controller suitable for controlling an operation of the memory device,

wherein the controller performs a fake operation on a set memory block not used to store data when a temperature of the memory device is in a low temperature range,

wherein the controller performs a first background operation according to a first execution condition when the temperature is in a normal temperature range, performs a second background operation according to a second execution condition when the temperature is in the low temperature range, and performs a third background operation according to a third execution condition when the temperature is in a high temperature range, and

wherein the third execution condition has fewer execution targets and a longer execution period than the first execution condition.