Dielectric ceramic composition, electronic device, and multilayer ceramic capacitor
A dielectric ceramic composition includes a main component of a perovskite type compound represented by a general formula of ABO 3 , in which A is an element in an A-site, B is an element in a B-site, and O is an oxygen element. A includes Ba. B includes Ti and Zr. A sintered-body lattice volume obtained by X-ray diffraction method is 64.50 Å 3 or above.
1. A dielectric ceramic composition comprising a main component of a perovskite type compound represented by a general formula of ABO 3 , in which A is an element in an A-site, B is an element in a B-site, and O is an oxygen element,
wherein A includes Ba and optionally at least one of Ca and Sr,
B includes Ti, Zr, and Hf,
98.0 parts by mol to 100 parts by mol of Ba are contained in the dielectric ceramic composition, in which a total of Ba, Ca, and Sr in the dielectric ceramic composition is 100 parts by mol,
90.0 pails by mol to 99.0 parts by mol of Ti are contained in the dielectric ceramic composition, in which a total of Ti, Zr, and Hf in the dielectric ceramic composition is 100 parts by mol, and
a sintered-body lattice volume obtained by X-ray diffraction method is 64.50 Å 3 or above.
2. The dielectric ceramic composition according to claim 1 , wherein a sintered-body lattice volume obtained by X-ray diffraction method is 64.68 Å 3 or above.
3. The dielectric ceramic composition according to claim 2 , wherein A includes Ca.
4. The dielectric ceramic composition according to claim 1 , wherein a sintered-body lattice volume obtained by X-ray diffraction method is 65.34 Å 3 or below.
5. An electronic device comprising the dielectric ceramic composition according to claim 1 .
6. A multilayer ceramic capacitor comprising a capacitor element body where inner-layer dielectric layers and inner electrode layers are laminated alternately,
wherein the inner-layer dielectric layers are composed of the dielectric ceramic composition according to claim 1 .