Solid-state imaging element and imaging device
Provided is a solid-state imaging element that is a wafer-level chip size package, that includes an optical sensor chip, a protective layer that is stacked on a light receiving surface of the optical sensor chip, and a rewiring layer that is stacked on a surface opposite to the light receiving surface of the optical sensor chip, in which a connection terminal of the rewiring layer is a copper flat pad without a solder ball, an alloy layer of tin and copper is not formed on a front surface of the flat pad, and a thermal expansion coefficient of the protective layer is substantially balanced with a thermal expansion coefficient of the rewiring layer.
1. A solid-state imaging element, comprising:
an optical sensor chip that includes a first substrate and a wiring layer, wherein
the wiring layer is on a specific surface of the first substrate, and
the specific surface of the first substrate is opposite to a light receiving surface of the first substrate;
a second substrate bonded to the wiring layer, wherein the wiring layer is between the first substrate and the second substrate;
a protective layer on the light receiving surface of the first substrate, wherein
the protective layer has a first thickness, and
the protective layer comprises a first material; and
a rewiring layer on a first surface of the second substrate, wherein
the first surface of the second substrate is opposite to a second surface of the second substrate,
the second surface of the second substrate faces the wiring layer,
the solid-state imaging element is a wafer-level chip size package,
the rewiring layer has a second thickness,
the rewiring layer comprises a second material different from the first material,
a connection terminal of the rewiring layer is a copper flat pad that excludes a solder ball,
an alloy layer of tin and copper is absent on a front surface of the copper flat pad, and
the first thickness of the protective layer and the second thickness of the rewiring layer are such that a thermal expansion coefficient of the protective layer is balanced with a thermal expansion coefficient of the rewiring layer.
2. The solid-state imaging element according to claim 1 , further comprising a color filter and an on-chip lens, wherein
the protective layer is a transparent resin layer that covers at least one of the color filter or the on-chip lens,
the color filter and the on-chip lens are on the light receiving surface of the first substrate, and
a glass substrate is absent on the transparent resin layer.
3. The solid-state imaging element according to claim 1 , further comprising a color filter, an on-chip lens, and a glass substrate, wherein
the protective layer includes a transparent adhesive resin layer,
the transparent adhesive resin layer comprises a transparent adhesive resin,
the transparent adhesive resin layer covers at least one of the color filter or the on-chip lens,
the color filter and the on-chip lens are on the light receiving surface of the first substrate,
the glass substrate is on the transparent adhesive resin layer and bonded to the transparent adhesive resin layer, and
the glass substrate is thinned from a front surface of the glass substrate by a thickness reduction method.
4. The solid-state imaging element according to claim 1 , wherein
the rewiring layer includes a redistribution wire, a solder mask, and the copper flat pad,
the solder mask covers the redistribution wire,
the copper flat pad is connected to the redistribution wire,
the copper flat pad is exposed from the solder mask, and
a front surface of the solder mask is flush with the front surface of the copper flat pad.
5. The solid-state imaging element according to claim 1 , wherein
the rewiring layer includes a redistribution wire, an inorganic insulating film, and the copper flat pad,
the inorganic insulating film covers the redistribution wire,
the copper flat pad is connected to the redistribution wire, and
the copper flat pad is exposed from the inorganic insulating film.
6. The solid-state imaging element according to claim 5 , wherein a front surface of the inorganic insulating film is flush with the front surface of the copper flat pad.
7. The solid-state imaging element according to claim 1 , further comprising a corrosion prevention film that covers the front surface of the copper flat pad.
8. An imaging device, comprising:
a solid-state imaging element that is a wafer-level chip size package; and
a signal processing circuit configured to process a signal from the solid-state imaging element,
wherein the solid-state imaging element includes:
an optical sensor chip that includes a first substrate and a wiring layer, wherein
the wiring layer is on a specific surface of the first substrate, and
the specific surface of the first substrate is opposite to a light receiving surface of the first substrate;
a second substrate bonded to the wiring layer, wherein the wiring layer is between the first substrate and the second substrate;
a protective layer on the light receiving surface of the first substrate, wherein
the protective layer has a first thickness, and
the protective layer comprises a first material; and
a rewiring layer on a first surface of the second substrate, wherein
the first surface of the second substrate is opposite to a second surface of the second substrate,
the second surface of the second substrate faces the wiring layer,
the rewiring layer has a second thickness,
the rewiring layer comprises a second material different from the first material,
a connection terminal of the rewiring layer is a copper flat pad that excludes a solder ball,
an alloy layer of tin and copper is absent on a front surface of the copper flat pad, and
the first thickness of the protective layer and the second thickness of the rewiring layer are such that a thermal expansion coefficient of the protective layer is balanced with a thermal expansion coefficient of the rewiring layer.