Barrier ruthenium chemical mechanical polishing slurry
A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.
1. A polishing composition for use on ruthenium and copper materials, comprising:
an alkali hydroxide;
an oxygenated halogen, wherein the oxygenated halogen compound comprises at least one halogen selected from the group consisting of: iodine, bromine, chlorine, and any combinations thereof, and wherein the oxygenated halogen is present in an amount of about 0.1 wt % to about 10 wt %, based on the total weight of the composition;
a halogen alkyl benzotriazole, present in an amount of about 0.001 wt % to about 0.08 wt %, based on the total weight of the composition;
an abrasive; and
an acid,
wherein the composition exhibits a polishing selectivity ratio of ruthenium to copper that is greater than about 1.2.
2. The composition of claim 1 , wherein the alkali hydroxide is potassium hydroxide.
3. The composition of claim 1 , wherein the alkali hydroxide is present in an amount of about 0.01 wt % to about 10 wt %, based on the total weight of the composition.
4. The composition of claim 3 , wherein the alkali hydroxide is present in an amount of about 0.01 wt % to about 1 wt %, based on the total weight of the composition.
5. The composition of claim 1 , wherein the oxygenated halogen is hydrogen periodate.
6. The composition of claim 1 , wherein the halogen alkyl benzotriazole comprises at least one halogen selected from the group consisting of: chlorine, bromine, iodine, and any combinations thereof.
7. The composition of claim 1 , wherein the alkyl in the halogen alkyl benzotriazole is one selected from methyl, ethyl, propyl, isopropyl, butyl, isobutyl, or any combination thereof.
8. The composition of claim 1 , wherein the halogen alkyl benzotriazole is chloro methyl benzotriazole.
9. The composition of claim 1 , wherein the halogen alkyl benzotriazole is present in an amount of about 0.005 wt % to about 0.08 wt %, based on the total weight of the composition.
10. The composition of claim 1 , wherein the abrasive is at least one selected from the group consisting of: alumina, silica, titania, ceria, zirconia, co-formed products thereof, and any combinations thereof.
11. The composition of claim 10 , wherein the abrasive is silica.
12. The composition of claim 11 , wherein the abrasive is present in an amount of about 0.01 wt % to about 12 wt %, based on the total weight of the composition.
13. The composition of claim 12 , wherein the abrasive is present in an amount of about 0.01 wt % to about 6 wt %, based on the total weight of the composition.
14. The composition of claim 1 , wherein the acid is at least one acid selected from the group consisting of: carboxylic acids, amino acids, sulfonic acids, phosphoric acids, phosphonic acids, and any combination thereof.
15. The composition of claim 14 , wherein said sulfonic acid is at least one organic sulfonic acid selected from the group consisting of: 1,2-ethanedisulfonic acid, 4-amino-3-hydroxy-1-naphthalenesulfonic acid, 8-hydroxyquinoline-5-sulfonic acid, aminomethane sulfonic acid, benzenesulfonic acid, hydroxylamine o-sulfonic acid, methanesulfonic acid, m-xylene-4-sulfonic acid, poly(4-styrenesulfonic acid), polyanetholesulfonic acid, p-toluenesulfonic acid, and trifluoromethane-sulfonic acid.
16. The composition of claim 14 , wherein said phosphoric acid is at least one organic phosphoric acid selected from the group consisting of: ethyl phosphoric acid, cyanoethyl phosphoric acid, phenyl phosphoric acid and vinyl phosphoric acid.
17. The composition of claim 14 , wherein said phosphonic acid is at least one organic phosphonic acid consisting of: poly(vinylphosphonic acid), 1-hydroxyethane-1,1-diphosphonic acid, nitrilotri(methylphosphonic acid), diethylenetriaminepentakis (methylphosphonic acid), N,N,N′N′-ethylenediaminetetrakis(methylene phosphonic acid), n-hexylphosphonic acid, benzylphosphonic acid and phenylphosphonic acid.
18. The composition of claim 1 , wherein the acid is at least one acid selected from the group consisting of: malonic acid, propionic acid, an organic sulfonic acid, and any combinations thereof.
19. The composition of claim 1 , wherein the acid is present in an amount of about 0.01 wt % to about 10 wt %, based on the total weight of the composition.
20. The composition of claim 1 , wherein the acid is present in an amount of about 0.01 wt % to about 1 wt %, based on the total weight of the composition.
21. The composition of claim 1 , further comprising a low-K removal rate inhibitor.
22. The composition of claim 21 , wherein said low-K removal rate inhibitor is a surfactant.
23. The composition of claim 22 , wherein said surfactant is at least one surfactant selected from the group consisting of: cationic surfactants, anionic surfactants, non-ionic surfactants, and amphoteric surfactants.
24. The composition of claim 23 , wherein the surfactant is an alkoxylated alcohol non-ionic surfactant.
25. The composition of claim 24 , wherein the surfactant is present in an amount of about 0.01 wt % to about 10 wt %, based on the total weight of the composition.
26. The composition of claim 25 , wherein the surfactant is present in an amount of about 0.01 wt % to about 1 wt %, based on the total weight of the composition.
27. The composition of claim 1 , wherein the pH of the composition is from about 5 to about 11.
28. The composition of claim 27 , wherein the pH of the composition is from about 7 to about 11.
29. The composition of claim 1 , wherein the composition exhibits a polishing selectivity ratio of ruthenium to copper that is greater than 2.5.
30. A polishing composition concentrate for use on ruthenium and copper materials, comprising:
potassium hydroxide, present in an amount of about 0.01 wt % to about 10 wt %, based on the total weight of the composition;
hydrogen periodate, present in an amount of about 0.1 wt % to about 10 wt %, based on the total weight of the composition;
chloro methyl benzotriazole, present in an amount of about 0.001 wt % to about 0.08 wt %, based on the total weight of the composition;
silica, present in an amount of about 0.01 wt % to about 12 wt %, based on the total weight of the composition; and
malonic acid, present in an amount of about 0.01 wt % to about 10 wt %, based on the total weight of the composition,
wherein the composition exhibits a polishing selectivity ratio of ruthenium to copper that is greater than 2.5.
31. A polishing composition concentrate for use on ruthenium and copper materials, comprising:
a pH adjuster;
a ruthenium oxidizer, wherein the ruthenium oxidizer comprises at least one halogen selected from the group consisting of: iodine, bromine, chlorine, and any combinations thereof, and wherein the ruthenium oxidizer is present in an amount of about 0.1 wt % to about 10 wt %, based on the total weight of the composition;
a copper corrosion inhibitor comprising a halogen alkyl benzotriazole, present in an amount of about 0.001 wt % to about 0.08 wt %, based on the total weight of the composition;
an abrasive; and
a removal rate enhancer,
wherein the composition exhibits a polishing selectivity ratio of ruthenium to copper that is greater than about 1.2.
32. The polishing composition according to claim 31 , further comprising a low-K removal rate inhibitor.