Device and method for high pressure anneal
Embodiment methods for performing a high pressure anneal process during the formation of a semiconductor device, and embodiment devices therefor, are provided. The high pressure anneal process may be a dry high pressure anneal process in which a pressurized environment of the anneal includes one or more process gases. The high pressure anneal process may be a wet anneal process in which a pressurized environment of the anneal includes steam.
1. A method, comprising:
etching a plurality of trenches in a substrate to form a fin;
depositing an insulating material in each trench of the plurality of trenches using a flowable chemical vapor deposition process, the insulation material being a nitride;
disposing the insulation material in a first pressurized environment, and performing a first anneal on the insulation material while the insulation material is in the first pressurized environment, wherein a pressure of the first pressurized environment is greater than 10 ATMs, wherein after the performing the first anneal the insulation material is an oxide;
thinning the insulation material to expose the fin;
forming a dummy gate over the substrate;
forming an interlayer dielectric (ILD) surrounding the dummy gate;
removing the dummy gate to form an opening; and
forming a gate electrode in the opening.
2. The method according to claim 1 , wherein a temperature of the first anneal is between 200 C and 500 C.
3. The method according to claim 1 , wherein the first anneal is a wet anneal, and the first pressurized environment comprises steam.
4. The method according to claim 1 , further comprising:
forming a plurality of interconnect layers overlying the gate electrode; and
after forming the plurality of interconnect layers, performing a second anneal in a second pressurized environment, wherein the second anneal is a dry anneal, and a pressure of the second pressurized environment is greater than 10 ATMs.
5. The method according to claim 4 , wherein the second pressurized environment comprises H 2 gas.
6. The method according to claim 4 , wherein the second pressurized environment comprises D 2 gas.
7. The method according to claim 1 , further comprising:
after forming the ILD, performing a second anneal process in a second pressurized environment, wherein a pressure of the second pressurized environment is more than 10 ATMs.
8. The method according to claim 7 , wherein the second anneal process is a wet anneal process, and the second pressurized environment comprises steam.
9. The method according to claim 1 , wherein the first anneal reduces a concentration of nitrogen in the insulation material.
10. The method according to claim 1 , wherein depositing the insulating material in each trench of the plurality of trenches using the flowable chemical vapor deposition process comprises:
depositing a first material using a chemical vapor deposition process; and
converting the first material to a second material by diffusing molecules into the first material, wherein the first anneal increases a diffusion depth of the diffusing molecules as compared to a diffusion depth the diffusing molecules would reach during an anneal at atmospheric pressure.
11. A method, comprising:
forming a dummy gate over a substrate;
forming an interlayer dielectric (ILD) surrounding the dummy gate, the ILD comprising a nitride;
after forming the ILD, converting at least a portion of the ILD to a first oxide;
after converting at least the portion of the ILD to the first oxide, performing a second anneal process in a second pressurized environment, wherein after the performing the second anneal process the ILD is further converted to a second oxide;
removing the dummy gate to form an opening;
filling the opening to form a gate electrode; and
forming a plurality of interconnect layers over the ILD, each interconnect layer of the plurality of interconnect layers comprising a conductor extending through a dielectric layer; and
after forming the plurality of interconnect layers, performing a first anneal process in a first pressurized environment, wherein the first anneal process is a dry anneal process that is performed using a process gas, and a pressure of the first pressurized environment is more than 10 ATMs.
12. The method according to claim 11 , wherein a temperature of the first anneal process is from 200 C to 500 C, and the process gas is deuterium gas.
13. The method according to claim 11 ,
wherein the second anneal process is a wet anneal process that is performed using steam, and a pressure of the second pressurized environment is more than 10 ATMs.
14. The method according to claim 13 , further comprising:
forming a plurality of trenches in the substrate; and
forming an insulating material in each trench of the plurality of trenches using a flowable chemical vapor deposition process.
15. The method according to claim 14 , further comprising:
performing a third anneal process on the insulation material in a third pressurized environment, wherein the third anneal process is a wet anneal process that is performed using steam, and a pressure of the third pressurized environment is higher than an atmospheric pressure.
16. The method according to claim 15 , wherein the pressure of the third pressurized environment is higher than 10 ATMs.
17. The method according to claim 15 , wherein a temperature of the third pressurized environment is from about 200 C to about 500 C.
18. The method according to claim 13 , wherein a temperature of the second pressurized environment is from about 200 C to about 500 C.
19. A method, comprising:
depositing an insulation material over a fin;
performing a first anneal process on the insulation material;
etching the insulation material to form a shallow trench isolation (STI) region adjacent to the fin;
forming an interlayer dielectric (ILD) over the fin, the ILD comprising a nitride;
performing a second anneal process on the ILD;
forming an opening in the ILD;
forming a gate stack in the opening;
forming a plurality of interconnect layers over the gate stack; and
performing a third anneal process on the plurality of interconnect layers, after the third anneal process the ILD comprising a nitrogen concentration of less than or equal to about 1e 18 atoms/cm 3 .
20. The method of claim 19 , wherein each of the first anneal process and the second anneal process is a wet anneal process at a pressure of greater than 10 ATMs, wherein the third anneal process is a dry anneal process at a pressure of greater than 10 ATMs.