High power amplifier circuit with protective feedback circuit

1. An amplifier circuit for providing an output of at least 100 W comprising a field effect transistor,

wherein a drain of the field effect transistor is connected with a protective feedback circuit,

wherein the protective feedback circuit is arranged to:

reduce an over-voltage energy at the drain of the field effect transistor if a voltage between the drain and a gate of the field effect transistor exceeds a feedback threshold voltage, and

increase a gate voltage of the field effect transistor above a gate threshold voltage after the voltage between the drain and the gate exceeds the feedback threshold voltage.

2. The amplifier circuit according to claim 1 , wherein the drain of the field effect transistor is connected with the gate of the field effect transistor by means of the protective feedback circuit.

3. The amplifier circuit according to claim 2 , wherein the protective feedback circuit is arranged to build up a conducting path in the field effect transistor such that at least a part of the over-voltage energy at the drain is dissipated by means of the conducting path.

4. The amplifier circuit according to claim 1 , wherein the protective feedback circuit is arranged to reduce an energy of an avalanche breakdown of the field effect transistor.

5. An amplifier circuit for providing an output of at least 100 W, comprising a field effect transistor,

wherein a drain of the field effect transistor is connected with a protective feedback circuit,

wherein the protective feedback circuit is arranged to reduce an over-voltage energy at the drain of the field effect transistor if a voltage between the drain and a gate of the field effect transistor exceeds a feedback threshold,

wherein the protective feedback circuit comprises a voltage reference, and

wherein the voltage reference is arranged to open a current path if a voltage between the drain and a source of the field effect transistor exceeds the feedback threshold voltage.

6. The amplifier circuit according to claim 5 , wherein the voltage reference comprises at least one avalanche diode arranged between the drain and the gate of the field effect transistor, wherein the avalanche diode is arranged to open the current path.

7. The amplifier circuit according to claim 6 , wherein the protective feedback circuit comprises a capacitance arranged between the drain and the gate of the field effect transistor, wherein the at least one avalanche diode is arranged parallel to the capacitance.

8. The amplifier circuit according to claim 7 , wherein the protective feedback circuit comprises a switching diode arranged between the capacitance and the drain, wherein the switching diode is arranged to charge the capacitance to a peak voltage between the drain and the gate.

9. The amplifier circuit according to claim 8 , wherein the protective feedback circuit comprises a resistor arranged between the at least one avalanche diode and the gate of the field effect transistor, wherein the resistor is arranged to stabilize the protective feedback circuit.

10. An amplifier circuit for providing an output of at least 100 W, comprising a field effect transistor,

wherein a drain of the field effect transistor is connected with a protective feedback circuit,

wherein the protective feedback circuit is arranged to reduce an over-voltage energy at the drain of the field effect transistor if a voltage between the drain and a gate of the field effect transistor exceeds a feedback threshold,

wherein the amplifier circuit comprises two field effect transistors arranged in a push pull arrangement, and

wherein each of the field effect transistors is protected by a respective protective feedback circuit.

11. A radio frequency amplifier arrangement comprising the amplifier circuit according to claim 1 , an input network and an output network, the radio frequency amplifier arrangement having a nominal operating frequency between 1 MHz and 100 MHz.

12. The radio frequency amplifier arrangement of claim 11 , wherein the nominal operating frequency is between 5 MHz and 85 MHz.

13. An electrical radio frequency generator for supplying electrical radio frequency to a load, the electrical radio frequency generator comprising the radio frequency amplifier arrangement according to claim 11 .

14. A plasma processing system comprising the electrical radio frequency generator according to claim 13 and a plasma chamber.

15. A method of protecting a field effect transistor in an amplifier circuit according to claim 1 for providing an output at least 100 W, the method comprising:

providing the feedback threshold voltage,

reducing the energy at the drain of the field effect transistor if the voltage between the drain and the gate of the field effect transistor exceeds the feedback threshold voltage.

16. A method of protecting a field effect transistor in an amplifier circuit according to claim 5 for providing an output at least 100 W, the method comprising:

providing a feedback threshold voltage, and

reducing the energy at the drain of the field effect transistor if the voltage between the drain and the gate of the field effect transistor exceeds the feedback threshold voltage.

17. A method of protecting a field effect transistor in an amplifier circuit according to claim 10 for providing an output at least 100 W, the method comprising:

providing a feedback threshold voltage, and

reducing the energy at the drain of the field effect transistor if the voltage between the drain and the gate of the field effect transistor exceeds the feedback threshold voltage.