Solid-state imaging element, solid-state imaging apparatus, and method for controlling solid-state imaging element

1. A solid-state imaging element, comprising:

a pixel circuit configured to sequentially generate a reset level and a plurality of signal levels corresponding to a plurality of exposure times, wherein each exposure time of the plurality of exposure times is different;

an analog-to-digital converter configured to:

convert the reset level into first digital data;

output the first digital data;

convert the plurality of signal levels into a plurality of pieces of second digital data; and

output the plurality of pieces of second digital data;

a memory configured to hold the first digital data and the plurality of pieces of second digital data; and

an arithmetic circuit configured to:

calculate a first value based on multiplication of the first digital data by an exposure ratio;

calculate a second value based on multiplication of third digital data of the plurality of pieces of second digital data by the exposure ratio;

calculate a difference between the calculated first value and the calculated second value;

control the memory to hold the calculated difference;

add the calculated difference and a set of pieces of digital data of the plurality of pieces of second digital data, wherein the third digital data is different from the set of pieces of digital data; and

control the memory to hold a result of the addition of the calculated difference and the set of pieces of digital data of the plurality of pieces of second digital data.

2. The solid-state imaging element according to claim 1 , wherein a capacity of the memory is a sum of a base-2 logarithm of a number of the plurality of signal levels and a data size of the calculated difference.

3. The solid-state imaging element according to claim 1 , wherein

the pixel circuit is further configured to generate a number of a plurality of reset levels equal to a number of the plurality of signal levels, and

the arithmetic circuit is further configured to:

add the first digital data and the calculated difference each time the first digital data is output, and

control the memory to hold a result of the addition of the first digital data and the calculated difference.

4. The solid-state imaging element according to claim 1 , wherein

the analog-to-digital converter is further configured to convert the plurality of signal levels based on an operating frequency of a clock signal, and

the operating frequency corresponds to the exposure ratio.

5. The solid-state imaging element according to claim 1 ,

wherein

the pixel circuit includes:

a plurality of photodiodes configured to generate charge based on photoelectric conversion of light;

a charge storage part; and

a transfer part,

the plurality of photodiodes shares the charge storage part,

the transfer part is configured to transfer the generated charge to the charge storage part, and

the charge storage part is configured to:

store the transferred charge; and

generate a voltage that corresponds to an amount of charge stored.

6. The solid-state imaging element according to claim 1 , wherein

the exposure ratio is a power of 2, and

the arithmetic circuit is further configured to execute shift operation on each of the first digital data data and the plurality of pieces of second digital data.

7. The solid-state imaging element according to claim 1 , wherein

the pixel circuit of a plurality of pixel circuits is in a two-dimensional lattice pattern, and

the analog-to-digital converter is associated with each pixel circuit of the plurality of pixel circuits.

8. The solid-state imaging element according to claim 1 , further comprising two stacked semiconductor substrates, wherein

the pixel circuit is on one of the two stacked semiconductor substrates, and

each of the analog-to-digital converter and the memory is on the other semiconductor substrate of the two stacked semiconductor substrates.

9. The solid-state imaging element according to claim 1 , further comprising two stacked semiconductor substrates, wherein

each of the pixel circuit and the memory is on one of the two stacked semiconductor substrates, and

the analog-to-digital converter is on the other semiconductor substrate of the two stacked semiconductor substrates.

10. The solid-state imaging element according to claim 1 , further comprising three stacked semiconductor substrates, wherein

the pixel circuit is on a first semiconductor substrate of the three stacked semiconductor substrates,

the analog-to-digital converter is on a second semiconductor substrate of the three stacked semiconductor substrates, and

the memory is on a third semiconductor substrate of the three stacked semiconductor substrates.

11. A solid-state imaging apparatus, comprising:

a pixel circuit configured to sequentially generate a reset level and a plurality of signal levels corresponding to a plurality of exposure times, wherein each exposure time of the plurality of exposure times is different;

an analog-to-digital converter configured to:

convert the reset level into first digital data;

output the first digital data;

convert the plurality of signal levels into a plurality of pieces of second digital data; and

output the plurality of pieces of second digital data;

a memory configured to hold the first digital data and the plurality of pieces of second digital data;

an arithmetic circuit configured to:

calculate a first value based on multiplication of the first digital data by an exposure ratio;

calculate a second value based on multiplication of third digital data of the plurality of pieces of second digital data by the exposure ratio;

calculate a difference between the calculated first value and the calculated second value;

control the memory to hold the calculated difference;

add the calculated difference and a set of pieces of digital data of the plurality of pieces of second digital data, wherein the third digital data is different from the set of pieces of digital data; and

control the memory to hold a result of the addition of the calculated difference and the set of pieces of digital data of the plurality of pieces of second digital data; and

a digital signal processing unit configured to execute signal processing on the calculated difference.

12. A method for controlling a solid-state imaging element, the method comprising:

sequentially generating a reset level and a plurality of signal levels corresponding to a plurality of exposure times, wherein each exposure time of the plurality of exposure times is different;

converting the reset level into first digital data;

outputting the first digital data;

converting the plurality of of signal levels into a plurality of pieces of second digital data;

outputting the plurality of pieces of second digital data;

calculating a first value based on multiplication of the first digital data by an exposure ratio;

calculating a second value based on multiplication of third digital data of the plurality of pieces of second digital data by the exposure ratio;

calculate a difference between the calculated first value and the calculated second value;

controlling the memory to hold the calculated difference;

adding the calculated difference and a set of pieces of digital data of the plurality of pieces of second digital data, wherein the third digital data is different from the set of pieces of digital data; and

controlling the memory to hold a result of the addition of the calculated difference and the set of pieces of digital data of the plurality of pieces of second digital data.