Gas distribution plate assembly for high power plasma etch processes
A gas distribution plate assembly for a processing chamber is provided that in one embodiment includes a body made of a metallic material, a base plate comprising a silicon infiltrated metal matrix composite coupled to the body, and a perforated faceplate comprising a silicon disk coupled to the base plate by a bond layer.
1. A gas distribution plate assembly, comprising:
a base plate comprising a metal matrix composite and including a plurality of thermal control conduits formed therein;
a perforated faceplate comprising a silicon wafer coupled to the base plate by a bond layer, wherein the silicon wafer is doped to provide electrically conductive properties to the perforated faceplate, and wherein the bond layer includes a plurality of gas distribution channels formed therein that are coupled to gas conduit formed through the base plate, and wherein the base plate and the perforated faceplate have a similar thermal conductivity; and
a temperature control system coupled to the gas distribution plate assembly, wherein the temperature control system comprises a fluid supply having a recursive tubing arrangement comprising a plurality of supply conduits and a plurality of return conduits each coupled to a respective one of the plurality of thermal control conduits formed in the base plate, wherein the plurality of supply conduits and the plurality of return conduits comprise a similar flow conductance.
2. The gas distribution plate assembly of claim 1 , wherein the bond layer comprises an aluminum silicon alloy or an aluminum material.
3. The gas distribution plate assembly of claim 1 , wherein the base plate comprises one of silicon, aluminum, or an aluminum silicon alloy in the metal matrix composite.
4. The gas distribution plate assembly of claim 1 , wherein the bond layer comprises a diffusion bond.
5. The gas distribution plate assembly of claim 1 , wherein a body comprising an aluminum material is coupled to the base plate, and the gas conduit is formed through the body.
6. The gas distribution plate assembly of claim 1 , wherein the gas conduit comprises a plurality of branch conduits formed in the base plate.
7. A gas distribution plate assembly, comprising:
a body;
a recursive fluid supply coupled to a portion of the body, the recursive fluid supply comprising a plurality of coolant lines that are split into sections having an equal length and diameter;
a perforated faceplate comprising a silicon wafer coupled to the body by a base plate, wherein the silicon wafer is doped to provide electrically conductive properties to the perforated faceplate;
a bond layer disposed between the base plate and the perforated faceplate; and
a plurality of seals positioned at an interface between the body and the base plate.
8. The gas distribution plate assembly of claim 7 , wherein the bond layer comprises an organic bond.
9. The gas distribution plate assembly of claim 7 , wherein gas passages are formed in the base plate.
10. The gas distribution plate assembly of claim 7 , wherein the base plate comprises a silicon infiltrated metal matrix composite.
11. The gas distribution plate assembly of claim 10 , wherein gas passages are formed in the base plate and the bond layer.
12. The gas distribution plate assembly of claim 10 , wherein the perforated faceplate is diffusion bonded to the bond layer.
13. The gas distribution plate assembly of claim 10 , wherein the bond layer is in contact with the base plate and the perforated faceplate.
14. The gas distribution plate assembly of claim 10 , wherein a thermal gasket is disposed between the body and the base plate.
15. A processing chamber, comprising:
a gas distribution plate assembly, comprising:
a base plate comprising a metal matrix composite; and
a perforated faceplate comprising a silicon wafer coupled to the base plate by a bond layer, wherein the bond layer includes a plurality of gas distribution channels formed therein that are coupled to gas conduit formed through the base plate; and
a temperature control system coupled to the gas distribution plate assembly, wherein the temperature control system comprises a fluid supply having a recursive tubing arrangement comprising a plurality of supply conduits and a plurality of return conduits each coupled to a respective one of the plurality of thermal control conduits formed in the base plate, wherein recursive tubing arrangement comprises a plurality of tubes with a similar flow conductance.
16. The processing chamber of claim 15 , wherein each of the plurality of supply conduits and the plurality of return conduits are formed in a plate coupled to the base plate.
17. The processing chamber of claim 15 , further comprising a heater positioned in the base plate.
18. The processing chamber of claim 15 , wherein the base plate comprises one of silicon, aluminum, or an aluminum silicon alloy in the metal matrix composite.